Zobrazeno 1 - 10
of 51
pro vyhledávání: '"M. A. Pampillon"'
Autor:
JF Vazquez, M brañas Pampillon, I Pitarch, M Lopez, J Medina, M Povedano, JA Fernandez Ramos, MC García, R Rojas Garcia, SI Pascual, I Málaga, J Eiris, M De Lemus, MG Cattinari, R Cabello, P Diaz, M Terrancle, J Maurino, P Rebollo, M Madruga
Publikováno v:
Value in Health. 25:S241
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba0ffcf5738ca96236d48cf42edb3c61
https://doi.org/10.1016/j.jval.2021.11.1180
https://doi.org/10.1016/j.jval.2021.11.1180
Publikováno v:
IEEE Electron Device Letters. 38:611-614
AlGaN/GaN high electron mobility transistors (HEMTs) and MOS-HEMTs using Gd2O3 as gate dielectric were irradiated with 2-MeV protons up to fluence of $1 \times 10^{15}$ cm−2. Results showed that proton irradiation causes a strong degradation in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9b1be208029a29cede7fc85115ec0c1b
https://doi.org/10.1109/led.2017.2682795
https://doi.org/10.1109/led.2017.2682795
Publikováno v:
IEEE Transactions on Electron Devices. 63:2729-2734
Thermal stability of AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors (MOS-HEMTs) and diodes using Gd2O3 is investigated by means of different thermal tests. DC and pulsed $I$ – $V$ characterization of the devices before a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::501328242b51751c5764e212899b617c
https://doi.org/10.1109/ted.2016.2564301
https://doi.org/10.1109/ted.2016.2564301
This article studies the physical and electrical behavior of Gd2-xScxO3 layers grown by high pressure sputtering from metallic Gd and Sc targets. The aim is to obtain a high permittivity dielectric for microelectronic applications. The films were obt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::869c91eb1d58dff441ecbf5759831c69
https://eprints.ucm.es/id/eprint/76213/
https://eprints.ucm.es/id/eprint/76213/
Publikováno v:
ECS Transactions. 61:27-39
Our research group studies the deposition of high permittivity dielectrics by a non-standard method: high-pressure sputtering. The dielectrics studied here are gadolinium scandate deposited from dielectric targets, and gadolinium oxide deposited from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0479cae6777e39f24a338ba78ded58
https://doi.org/10.1149/06102.0027ecst
https://doi.org/10.1149/06102.0027ecst
Autor:
David J. Sanz, Jorge Pedrós, Israel Arnedo, J. Cárabe, José Javier Gandía, José Pablo González, Montserrat Recalde Fernández, Fernando Calle, Rajveer Fandan, A. Boscá, Andrea Inés, M. A. Pampillon, A. Molinero, Javier Martínez, Marina de la Cruz, Susana Fernández
Publikováno v:
Micromachines
Micromachines, Vol 10, Iss 6, p 402 (2019)
Volume 10
Issue 6
Academica-e. Repositorio Institucional de la Universidad Pública de Navarra
instname
Academica-e: Repositorio Institucional de la Universidad Pública de Navarra
Universidad Pública de Navarra
Micromachines, Vol 10, Iss 6, p 402 (2019)
Volume 10
Issue 6
Academica-e. Repositorio Institucional de la Universidad Pública de Navarra
instname
Academica-e: Repositorio Institucional de la Universidad Pública de Navarra
Universidad Pública de Navarra
New architectures of transparent conductive electrodes (TCEs) incorporating graphene monolayers in different configurations have been explored with the aim to improve the performance of silicon-heterojunction (SHJ) cell front transparent contacts. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::400e89123db337404a4697e47651a369
https://doi.org/10.3390/mi10060402
https://doi.org/10.3390/mi10060402
Publikováno v:
Microelectronic Engineering. 109:236-239
Graphical abstractDisplay Omitted Gd2O3 obtained by high pressure sputtering from Gd target with plasma oxidation on Si.We have obtained a high k dielectric with good electrical properties.Gate conductances and gate leakage currents are low.Almost ne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e102c2df8affd7b003e42c98fb1aee3
https://doi.org/10.1016/j.mee.2013.03.094
https://doi.org/10.1016/j.mee.2013.03.094
Publikováno v:
Microelectronic Engineering. 109:223-226
Two-step high-pressure sputtering for Gd2O3 deposition on InP substrates.Working MIS devices for all sputtering and plasma oxidation conditions.High capacitance (CET of 2.4nm) with moderate leakage (under 10-3Acm-2 at a gate voltage of 1V). We show w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45488f8a0d6d95a10eb06f76b2726c92
https://doi.org/10.1016/j.mee.2013.03.133
https://doi.org/10.1016/j.mee.2013.03.133
Publikováno v:
Thin Solid Films. 526:81-86
This work demonstrates the viability of scandium oxide deposition on silicon by means of high pressure sputtering. Deposition pressure and radio frequency power are varied for optimization of the properties of the thin films and the ScO x /Si interfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::354880434c593b6ea0b207207b60bdfe
https://doi.org/10.1016/j.tsf.2012.11.008
https://doi.org/10.1016/j.tsf.2012.11.008
Autor:
M. L. Lucía, P. C. Feijoo, E. San Andrés, Maria Toledano-Luque, M. A. Pampillon, A. del Prado
Publikováno v:
Microelectronic Engineering. 88:2991-2996
Thin gadolinium metallic layers were deposited by high-pressure sputtering in pure Ar atmosphere. Subsequently, in situ thermal oxidation was performed at temperatures ranging from 150 to 750 °C. At an oxidation temperature of 500 °C the films show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c64c394b2f5ae878c5a75c02d470a27
https://doi.org/10.1016/j.mee.2011.04.058
https://doi.org/10.1016/j.mee.2011.04.058