Zobrazeno 1 - 10
of 876
pro vyhledávání: '"M. A. Nicolet"'
Publikováno v:
Nicolet, M.-A.; Ryser, Manuel; Romano, Valerio (2015). Electrical resistivity change in amorphous Ta42Si13N45 films by stress relaxation. Applied physics. A, Materials science & processing, 118(3), pp. 1153-1160. Springer-Verlag Heidelberg 10.1007/s00339-014-8931-0
In a first experiment, a reactively sputtered amorphous Ta_42Si_13N_45 film about 260 nm thick deposited on a flat and smooth alumina substrate was thermally annealed in air for 30 min and let cooled again repeatedly at successively higher temperatur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1742e71e5d3e7bbebce858607591ed9
https://boris.unibe.ch/74995/1/art%3A10.1007%2Fs00339-014-8931-0.pdf
https://boris.unibe.ch/74995/1/art%3A10.1007%2Fs00339-014-8931-0.pdf
Autor:
F.H. Eisen, M.-A. Nicolet
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 211:408-414
We show experimentally to an accuracy of about 1%, using silicon wafers of 〈1 0 0〉 , 〈1 1 0〉 and 〈1 1 1〉 orientation, that the backscattering spectrum of an actual amorphous silicon film is correctly reproduced by rotating a single-crysta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::522fc2cb6abe5a34b292fa6d59f3434c
https://doi.org/10.1016/s0168-583x(03)01369-7
https://doi.org/10.1016/s0168-583x(03)01369-7
Autor:
M.-A. Nicolet, P. H. Giauque
Publikováno v:
Journal of Applied Physics. 93:4576-4583
Films about 200 nm thick of composition Ru17Si16O67 (≈50% RuO2+50% SiO2) and Ir18Si15O67 (≈55% IrO2+45% SiO2) deposited on oxidized silicon wafers by reactive magnetron sputtering with an argon–oxygen gas mixture from bielemental targets have b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47b9470f36fc439a7541979390fd9e33
https://doi.org/10.1063/1.1542919
https://doi.org/10.1063/1.1542919
Publikováno v:
Microelectronic Engineering. 60:107-111
We present here resistivity, Hall effect and magnetoresistance measurements at low temperatures (1 K > T > 300 K) and under high magnetic field (B > 8 T) of Ru17Si16O67 amorphous thin film. These amorphous films are characterised by a mixture of meta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b70c97a68b584380c21f1db74d68446b
https://doi.org/10.1016/s0167-9317(01)00683-9
https://doi.org/10.1016/s0167-9317(01)00683-9
Autor:
M.-A. Nicolet, P. H. Giauque
Publikováno v:
Microelectronic Engineering. 55:357-367
Thin ternary films of the generic composition (early transition metal)–Si–(nitrogen or oxygen) can be synthesized that have an amorphous or near-amorphous structure and are highly resistant to crystallization upon thermal annealing. Common to all
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b494dde26a12bc213a69c543083452f0
https://doi.org/10.1016/s0167-9317(00)00468-8
https://doi.org/10.1016/s0167-9317(00)00468-8
Publikováno v:
Microelectronic Engineering. 55:403-408
Ru(sub 1)Si(sub 1)O(sub 4) thin films were deposited on Si and oxidized Si substrates by reactive rf magnetron sputtering of a Ru(sub 1)Si(sub 1) target in an argon/oxygen gas mixture.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb8b6aac976303088a1842f510de0518
https://doi.org/10.1016/s0167-9317(00)00474-3
https://doi.org/10.1016/s0167-9317(00)00474-3
Publikováno v:
Microelectronic Engineering. 55:183-188
Films (220 nm-thick) deposited by reactive rf sputtering from a Ti 3 Si target with an argon/oxygen gas mixture were annealed for 30 min in vacuum at temperatures between 400 and 900°C. The films were characterized by 2 MeV He 2+ backscattering spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ba27e14f711e3a22447132688171291
https://doi.org/10.1016/s0167-9317(00)00446-9
https://doi.org/10.1016/s0167-9317(00)00446-9
Publikováno v:
Surface and Coatings Technology. 124:162-168
Films of a ternary alloy of composition Ti 34 Si 23 N 43 and of a structure consisting of homogeneously distributed ∼2 nm sized TiN-like grains in an amorphous matrix were deposited by reactive magnetron sputtering to thicknesses of 250–1000 nm a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::612af2710159343900d5d72cfea0691e
https://doi.org/10.1016/s0257-8972(99)00641-6
https://doi.org/10.1016/s0257-8972(99)00641-6
Publikováno v:
Journal of Applied Physics. 86:1974-1981
Films of Ru–Si–O were synthesized by reactively sputtering a Ru1Si1 target in an Ar/O2 gas mixture. They were characterized in terms of their composition by 2.0 MeV 4He++ backscattering spectrometry, their atomic density by thickness measurements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::005d7b39982264321537c54fb093e68f
https://doi.org/10.1063/1.370996
https://doi.org/10.1063/1.370996
Publikováno v:
Journal of Electronic Materials. 28:949-954
Backscattering spectrometry, x-ray diffractometry, and scanning electron microscopy have been used to study metallurgically the evolution of 〈GaN〉/Ti(40 nm)/Al(180 nm) and 〈GaN〉/Ti(80 nm)/Al(150 nm) metal contacts before and after annealing f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d62a90e9ff5df13c350572e5ccd1b06
https://doi.org/10.1007/s11664-999-0202-z
https://doi.org/10.1007/s11664-999-0202-z