Zobrazeno 1 - 5
of 5
pro vyhledávání: '"M. A. Mohou"'
Publikováno v:
Journal of Fundamental and Applied Sciences, Vol 8, Iss 1, Pp 73-82 (2016)
Journal of Fundamental and Applied Sciences; Vol 8, No 1 (2016); 73-82
Journal of Fundamental and Applied Sciences; Vol 8, No 1 (2016); 73-82
The influence of the annealing temperature to desorb a protective Te capping layer of the zinc telluride (ZnTe (100)) surface was investigated. The surface reconstruction of the ZnTe (100) upon the removal of a Te capping layer grown by the molecular
Autor:
J. P. Nys, Ph. Ebert, David Troadec, Xavier Wallart, Didier Stiévenard, Marc Veillerot, Bruno Grandidier, J.F. Lampin, Thomas Demonchaux, Gilles Patriarche, I. Lefebvre, K. K. Sossoe, M. M. Dzagli, H. J. von Bardeleben, M. A. Mohou, A. Addad, M. Schnedler, Christophe Coinon, Maxime Berthe
Publikováno v:
Physical Review Materials. 2
While nonstoichiometric binary III-V compounds are known to contain group-V antisites, the growth of ternary alloys consisting of two group-V elements might give additional degrees of freedom in the chemical nature of these antisites. Using cross-sec
Publikováno v:
Journal of Photochemistry and Photobiology A: Chemistry. 215:118-122
In this work we studied the interaction between CdSe/ZnS core-shell quantum dots (QDs) and bovine serum albumin (BSA) protein, and the temperature effects on the structural and spectroscopic properties of both, individual QDs and protein and their bi
Publikováno v:
Afrique Science: Revue Internationale des Sciences et Technologie; Vol 5, No 1 (2009)
La theorie electromagnetique de la double heterostructure (DH) laser Ga1-xAlxAsySb1-y/Ga1-x’Inx’Asy’Sb1-y’/Ga1-xAlxAsySb1-y a ete realisee a partir des equations de Maxwell, Huyghens et Fraunhofer. Elle a permis d’etablir l’expression du
Publikováno v:
Semiconductor Science and Technology
Semiconductor Science and Technology, IOP Publishing, 2013, 28 (1), ⟨10.1088/0268-1242/28/1/015015⟩
Semiconductor Science and Technology, IOP Publishing, 2013, 28 (1), ⟨10.1088/0268-1242/28/1/015015⟩
Spontaneous emission has been used to evaluate the proportion of the different recombination channels in 2.4–3.2 µm type I- GaInAsSb quantum-well lasers operating at room temperature. The method consists in using the square root of the integrated