Zobrazeno 1 - 3
of 3
pro vyhledávání: '"M. A. Melendes"'
Autor:
Robert William Ryan, Y.C. Wang, M. A. Melendes, R. Pullela, A. Tate, Y.K. Chen, R. A. Hamm, Rose Fasano Kopf, J. Thevin
Publikováno v:
Journal of Electronic Materials. 29:222-224
We have fabricated reduced area InGaAs/InP DHBTs for high speed circuit applications. To produce the small dimensions required, a process involving both wet chemical and ECR plasma etching was developed. Optical emission spectroscopy was used for end
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::031bf5cf45b2a805fd9139748db0ea42
https://doi.org/10.1007/s11664-000-0146-9
https://doi.org/10.1007/s11664-000-0146-9
Autor:
R. Reyes, C. T. Liu, A. Tate, Y. Yang, Nils Weimann, M. A. Melendes, Rose Fasano Kopf, J. Frackoviak, R. A. Hamm, H. L. Maynard, D. C. Jacobson, R. Melendes
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:871
In this study we evaluated both NiCr and TaN thin-film resistor material for use with our InP technology. Thermal stability, sensitivity to oxidation, temperature coefficients, and patterning techniques were compared for the two materials. The film s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fafe8caf5c56c79e3bf9092a642fa20e
https://doi.org/10.1116/1.1473179
https://doi.org/10.1116/1.1473179
Autor:
R. A. Hamm, A. Tate, M. A. Melendes, R. Melendes, Y.K. Chen, Rose Fasano Kopf, Robert William Ryan, H.S. Tsai
Publikováno v:
Electronics Letters. 36:1833
A broadband amplifier using InP-InGaAs single heterojunction bipolar transistors (HBTs) is presented. This modified Darlington amplifier exhibits a low-frequency gain of 6.2 dB with -3 dB bandwidth of 90 GHz. This wide bandwidth performance is compat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83464d9eb2f45d84e9757114f9cac5b8
https://doi.org/10.1049/el:20000850
https://doi.org/10.1049/el:20000850