Zobrazeno 1 - 4
of 4
pro vyhledávání: '"M. A. Md Zawawi"'
Autor:
Zainuriah Hassan, M. A. Md. Zawawi, Mohd Zamir Pakhuruddin, Sha Shiong Ng, Habib Ullah Manzoor
Publikováno v:
Physica B: Condensed Matter. 622:413339
In this paper, an efficient three-layered p-In0.6Ga0.6N/p-In0.7Ga0.7N/n-In0.7Ga0.7N (PPN) solar cell was designed. The characteristics of the PPN-junction InGaN solar cell were simulated using the SCAPS-1D software. The effects of the thickness and c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fd7b4f8039ab3b50dbee5074f7dcb36
https://doi.org/10.1016/j.physb.2021.413339
https://doi.org/10.1016/j.physb.2021.413339
Physical design convergence becomes complicated as the number of gates is increasing with decreasing size of the transistors. Multi-corner multi-mode timing convergence is introduced to compensate for the manufacturing variation, raising the number o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e44b28a51ece4726c1d4e40544cb2b56
https://doi.org/10.1007/978-981-13-6447-1_25
https://doi.org/10.1007/978-981-13-6447-1_25
Autor:
Asrulnizam Abd Manaf, M. F. Packeer Mohamed, W. N. N. Zaharim, M. A. Md. Zawawi, Nurhaslinda Hashim
This paper describes the physical simulation of Al0.3Ga0.7N/GaN-based double barrier resonant tunnelling diode (RTD) with cubic-GaN structure using Silvaco ATLAS. Cubic-GaN is interesting for vertical transport devices due to the absence of internal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3367d464e9f132fc12049f6f44a99557
https://doi.org/10.1007/978-981-13-6447-1_18
https://doi.org/10.1007/978-981-13-6447-1_18
Publikováno v:
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ff4df41915603183574b73ae2ed5174
https://doi.org/10.1109/asdam.2014.6998671
https://doi.org/10.1109/asdam.2014.6998671