Zobrazeno 1 - 10
of 36
pro vyhledávání: '"M. A. Korzhuev"'
Publikováno v:
Вестник Дагестанского государственного технического университета: Технические науки, Vol 45, Iss 1, Pp 49-59 (2018)
Objectives. Recently, there has been a sharp increase in research interest in thermoelectricity (TE) and its applications. New designs for thermoelectric converters (TEC) are being proposed and a large number of new thermoelectric materials (TEM) wit
Externí odkaz:
https://doaj.org/article/0e13ca2c9c194843a1a47c20d17a72bc
Mechanism and Kinetics of the Hydrogen Failure of Thermoelectric Materials during Water Electrolysis
Publikováno v:
Russian Metallurgy (Metally). 2020:1102-1115
The mechanism and kinetics of the ultrafast hydrogen failure of thermoelectric materials in electrochemical cells during water electrolysis (T = 300 K) are studied. The effect is explained by the “gas” failure caused by the penetration of nonequi
Publikováno v:
Inorganic Materials: Applied Research. 10:1039-1051
The dimensionless thermoelectric figure of merit and magnetic field production ability of “natural” nanostructures–layered ternary alloys (TA) of the family [(Ge, Sn, Pb)(Te, Se)]m [(Bi,Sb)2(Te,Se)3]n, with non-isovalent cationic substitution (
Publikováno v:
Vestnik Dagestanskogo Gosudarstvennogo Tehničeskogo Universiteta: Tehničeskie Nauki, Vol 45, Iss 1, Pp 49-59 (2018)
Objectives. Recently, there has been a sharp increase in research interest in thermoelectricity (TE) and its applications. New designs for thermoelectric converters (TEC) are being proposed and a large number of new thermoelectric materials (TEM) wit
Publikováno v:
Semiconductors. 51:894-897
The crystal structures of layered crystals, i.e. ternary alloys [(Ge,Sn,Pb)Te(Se)] m [(Bi,Sb)2(Te,Se)3] n (m, n = 0, 1, 2…) (space groups $$R\overline 3 m$$ , $$P\overline 3 {m_1}$$ , and P21/m) are analyzed. The hierarchical relations between vari
Autor:
M. A. Korzhuev
Publikováno v:
Semiconductors. 51:924-927
The causes of the “charge-carrier density collapse”, i.e., a sharp increase in the equilibrium charge-carrier density n, p = 1 × 1019 → (2–5) × 1020 cm–3 in going from binary alloys such as GeTe and Bi2Te3 to the family of ternary alloys
Autor:
M. A. Kretova, M. A. Korzhuev
Publikováno v:
Semiconductors. 51:902-905
The band gap E g of a number of new thermoelectric materials, such as skutterudites, clathrates, Heusler phases, (Ge,Sn,Pb)(Te,Se)] m [(Bi,Sb)2(Te,Se)3] n (m, n = 0, 1, 2…) ternary alloys, and others is estimated. Estimations are performed using Go
Publikováno v:
Semiconductors. 51:898-901
The processes of copper intercalation into the van der Waals gaps of layered ternary alloys of the family [(Ge,Sn,Pb)(Te,Se)] m [(Bi,Sb)2(Te,Se)3] n (m, n = 0, 1, 2…) to modify the electrical, mechanical, and other physical properties of samples ar
Publikováno v:
Inorganic Materials: Applied Research. 7:177-186
Layered crystals PbBi2(Te1 − xSex)4 + δ and PbBi4(Te1 − xSex)7 + δ with the stoichiometry deviation toward the excess of chalcogenides (x = 0–0.7; δ = 0–0.1) are synthesized. The obtained compounds are attributed to “natural” Bi2Te3-ty
Publikováno v:
Semiconductors. 51:969-971
The processes of the formation of complex crystal structures–layered crystals of [(Ge, Sn, Pb)(Te, Se)] m [(Bi, Sb)2(Te,Se)3] n (m, n = 0, 1, 2,…) ternary alloys with different symmetries (space groups R $$\overline 3 $$ m, P $$\overline 3 $$ m1,