Zobrazeno 1 - 10
of 70
pro vyhledávání: '"M. A. Kinch"'
Autor:
Fred Harris, F. Aqariden, Lance Robertson, Christopher A. Schaake, Jun Zhao, Roger L. Strong, M. A. Kinch
Publikováno v:
Journal of Electronic Materials. 44:3102-3107
DRS Technologies is pursuing molecular beam epitaxy (MBE) HgCdTe as an alternative to its standard liquid-phase epitaxy (LPE) double-sided interdiffused (DSID) process for small-pitch, large-area, high-density vertically integrated photodiode (HDVIP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7d98c765b02f93a7ff370cac2b87b65
https://doi.org/10.1007/s11664-015-3825-2
https://doi.org/10.1007/s11664-015-3825-2
Publikováno v:
Journal of Electronic Materials. 42:3243-3251
Characterization of mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) HgCdTe focal-plane arrays (FPAs) indicates that limitations on operability at elevated temperatures are due to detector dark current and excess 1/f noise. Dark-cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c04ad3c2f1b2b19c8d0b9d9b7594dc0
https://doi.org/10.1007/s11664-013-2636-6
https://doi.org/10.1007/s11664-013-2636-6
Autor:
Pradip Mitra, Richard Scritchfield, Mike Goodwin, Martha Ohlson, Jeffrey D. Beck, Lewis Wood, M. R. Skokan, M. A. Kinch, Chang-Feng Wan, Billy Sullivan, J. E. Robinson, Jamie Teherani
Publikováno v:
Journal of Electronic Materials. 38:1579-1592
The operation of the mid-wave infrared (MWIR) HgCdTe cylindrical electron injection avalanche photodiode (e-APD) is described. The measured gain and excess noise factor are related to the to the collection region fill factor. A 2D diffusion model cal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be7bf93aa5baf18f50f2061e5d084019
https://doi.org/10.1007/s11664-009-0684-8
https://doi.org/10.1007/s11664-009-0684-8
Publikováno v:
Journal of Electronic Materials. 37:1387-1390
Anomalous secondary-ion mass spectroscopy (SIMS) profiles of copper in thin pieces of HgCdTe are explained using the model used for diode formation by ion milling and ion implantation. In this model, the SIMS ion beam injects mercury interstitials in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f5ee68911a711dcdaa1ec8455f16821
https://doi.org/10.1007/s11664-008-0425-4
https://doi.org/10.1007/s11664-008-0425-4
Autor:
James T. Teherani, H. D. Shih, P. K. Liao, F. Aqariden, M. A. Kinch, D. Chandra, William Sullivan, Richard Scritchfield, D. F. Weirauch, H. F. Schaake, Chang-Feng Wan
Publikováno v:
Journal of Electronic Materials. 37:1401-1405
The high-operating-temperature (HOT) midwave infrared (MWIR) n-on-p detector has been pursued using the high-density vertically integrated photodiode (HDVIP®) architecture. In this device, arsenic-doped HgCdTe grown by liquid-phase epitaxy (LPE) is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1116ad1ca6f74c64b2e78d08a473e91
https://doi.org/10.1007/s11664-008-0423-6
https://doi.org/10.1007/s11664-008-0423-6
Autor:
P. K. Liao, P. D. Dreiske, F. Aqariden, T.A. Shafer, T. H. Teherani, H. F. Schaake, T. Murphy, M. A. Kinch, H. D. Shih
Publikováno v:
Journal of Electronic Materials. 36:900-904
Hg1−x Cd x Te samples of x ~ 0.3 (in the midwave infrared, or MWIR, spectral band) were prepared by molecular beam epitaxy (MBE) for fabrication into 30-μm-pitch, 256 × 256, front-side-illuminated, high-density vertically-integrated photodiode (H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a8bdecb11093aa5fe80546e2b607c76
https://doi.org/10.1007/s11664-007-0127-3
https://doi.org/10.1007/s11664-007-0127-3
Autor:
D. Chandra, M. A. Kinch, F. Aqariden, H. F. Schaake, D. F. Weirauch, T. H. Teherani, H. D. Shih, P. D. Dreiske
Publikováno v:
Journal of Electronic Materials. 35:1470-1473
Exposure to specific damage introduced by either ion implantation or ion milling converts p-type short wavelength infrared (SWIR) HgCdTe to n-type in a manner similar to the conversions in medium wavelength infrared (MWIR) or long wavelength infrared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2169b5b0b4d82b39a3088d25174b58fb
https://doi.org/10.1007/s11664-006-0286-7
https://doi.org/10.1007/s11664-006-0286-7
Publikováno v:
Journal of Electronic Materials. 34:928-932
1/f noise in HgCdTe photodiodes has been attributed to a variety of sources, most of which are associated with some form of excess current. At DRS, we have measured the 1/f noise in vertically integrated (VIP) and high-density vertically integrated p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6da91621ae3c53db87587b64a6b04caf
https://doi.org/10.1007/s11664-005-0044-2
https://doi.org/10.1007/s11664-005-0044-2
Autor:
H. F. Schaake, F. Aqariden, H. D. Shih, D. Chandra, D. F. Weirauch, M. A. Kinch, Chang-Feng Wan
Publikováno v:
Journal of Electronic Materials. 34:963-967
Arsenic is known to be an amphoteric impurity that may occupy either sublattice in HgCdTe depending upon sample annealing. As an acceptor in low concentrations, it offers several features that are attractive for the fabrication of certain n + -on-p d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78cbe31b01748689eb8ff12e1b301099
https://doi.org/10.1007/s11664-005-0051-3
https://doi.org/10.1007/s11664-005-0051-3
Autor:
T. H. Teherani, D. Chandra, P. D. Dreiske, M. A. Kinch, H. D. Shih, H. F. Schaake, F. Aqariden, D. F. Weirauch
Publikováno v:
Journal of Electronic Materials. 34:864-867
Arsenic incorporated in HgCdTe epifilms at levels ranging from 6×1014 to 4×1016 cm−3, and activated completely as an acceptor, converts into a donor upon introduction of specific damage introduced by ion milling, ion implantation, or ECR. The res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::993f6ccc6b9d239359f1d6bae8b6559b
https://doi.org/10.1007/s11664-005-0033-5
https://doi.org/10.1007/s11664-005-0033-5