Zobrazeno 1 - 10
of 20
pro vyhledávání: '"M. A. Karachevtseva"'
Autor:
I. O. Smirnova, M. A. Karachevtseva, S. M. Mikhailov, Ye. A. Kulikova, I. S. Kolova, T. S. Smirnova, V. Yu. Dudko, Ya. G. Petunova, N. V. Shin
Publikováno v:
Vestnik Dermatologii i Venerologii, Vol 0, Iss 1, Pp 76-84 (2017)
Goal. To obtain information on typical errors in medical aid rendered to acne patients in dermatovenerology dispensaries in St. Petersburg in order to develop measures to improve the quality of medical aid rendered to this group of patients. Material
Externí odkaz:
https://doaj.org/article/cc3cb5cbca044869be554cac76a23c34
Autor:
S. S. Yu, E. V. Melnikova, Zhou Jing, A. A. Shmonin, A. G. Shumeeva, E. A. Bondarevna, M. A. Karachevtseva, V. I. Dorofeyev
Publikováno v:
Учёные записки Санкт-Петербургского государственного медицинского университета им. Акад. И.П. Павлова, Vol 23, Iss 4, Pp 87-92 (2016)
The study focuses on comparison and analysis of the work of big stroke units in the Russian Federation and the People’s Republic of China specialized in the medical care for patients with acute stroke. 522 patients were surveyed in Russia’s and C
Externí odkaz:
https://doaj.org/article/20f4153e842543ff8ed52ea63c87ff62
Publikováno v:
Instruments and Experimental Techniques. 65:80-82
Publikováno v:
Semiconductors. 53:1975-1978
The process of excess current carriers capture from wide-gap barrier layers into a quantum well plays a decisive role in the operation of devices based on semiconductor structures. Among these devices are lasers, light-emitting diodes, and photodetec
Autor:
A. Yu. Arkhipova, V. Sheremetyev, A. Kudryashova, Konstantin V. Shaitan, A. S. Soldatenko, M. A. Karachevtseva, V. A. Andreev, Sergey Prokoshkin, M. M. Moisenovich, Vladimir Brailovski
Publikováno v:
Moscow University Biological Sciences Bulletin. 74:250-255
The effect of the surface of Ti-Zr-Nb (TZN) shape memory alloys (SMA) on adhesion, proliferation, viability, and organization of the actin cytoskeleton of osteoblast-like MG-63 cells has been studied. The studied SMA have a unique combination of mech
Publikováno v:
Journal of Communications Technology and Electronics. 63:1230-1234
Excess carrier capture into quantum wells (QWs) of undoped AlGaAs/GaAs and modulation-doped n-AlGaAs/GaAs heterostructures has been investigated by means of photoluminescence spectroscopy. The oscillatory dependence of the photoluminescence (PL) inte
Publikováno v:
Proceedings of Universities. Electronics. 23:327-334
Publikováno v:
Russian Microelectronics. 46:449-453
The effect of the excess hole capture efficiency on carrier accumulation with increasing photoexcitation in quantum wells of the n-AlGaAs/GaAs heterostructures is investigated. The oscillatory character of the dependence of the ratio between the inte
Autor:
V. Yu. Dudko, M. A. Karachevtseva, Ya. G. Petunova, N. V. Shin, I. O. Smirnova, Ye. A. Kulikova, I. S. Kolova, Tatyana S. Smirnova, S. M. Mikhailov
Publikováno v:
Vestnik Dermatologii i Venerologii, Vol 0, Iss 1, Pp 76-84 (2017)
Goal. To obtain information on typical errors in medical aid rendered to acne patients in dermatovenerology dispensaries in St. Petersburg in order to develop measures to improve the quality of medical aid rendered to this group of patients. Material
Autor:
N. G. Yaremenko, V. A. Strakhov, G. B. Galiev, E. A. Klimov, I. S. Vasil’evskii, M. V. Karachevtseva
Publikováno v:
Journal of Communications Technology and Electronics. 58:243-249
Concentration of 2D electrons n s is measured in the modulation-doped PHEMT structures with the aid of two photoluminescence (PL) methods using halfwidth of the 1e-1hh band and the energy difference E F-E 1e in the experimental PL spectra. The applic