Zobrazeno 1 - 4
of 4
pro vyhledávání: '"M. A. J. V. Tilburg"'
Publikováno v:
Nanophotonics, Vol 8, Iss 10, Pp 1771-1781 (2019)
Nanostructures composed of dielectric, metallic or metalo-dielectric structures are receiving significant attention due to their unique capabilities to manipulate light for a wide range of functions such as spectral colors, anti-reflection and enhanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::138f379388f79402a6a926dba134bf14
https://doaj.org/article/e1a1ac7750c34845a9960489fb3c6b65
https://doaj.org/article/e1a1ac7750c34845a9960489fb3c6b65
Autor:
D. Busse, Alain Dijkstra, Jens Renè Suckert, Claudia Rödl, M. A. J. V. Tilburg, V. T. V. Lange, Jos E. M. Haverkort, Marcel A. Verheijen, Jürgen Furthmüller, Silvana Botti, Erik P. A. M. Bakkers, Elham M. T. Fadaly, Friedhelm Bechstedt, Jonathan J. Finley
Publikováno v:
2020 Conference on Lasers and Electro-Optics, CLEO 2020-Proceedings
Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher- Stern-Wurfel fit of the photoluminescence spectrum unambiguously confirms band- to-band recombination. The transition matrix elements are large since the translational sy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca14ddf3f9482d4a76c85e2cebd4b332
https://research.tue.nl/nl/publications/01dfd7f2-f90f-4892-a059-74055f85bfcf
https://research.tue.nl/nl/publications/01dfd7f2-f90f-4892-a059-74055f85bfcf
Autor:
Heinz Schmid, Jürgen Furthmüller, Marcel A. Verheijen, Sebastian Kölling, Alain Dijkstra, Erik P. A. M. Bakkers, Friedhelm Bechstedt, Jens Renè Suckert, Elham M. T. Fadaly, Jos E. M. Haverkort, M. A. J. V. Tilburg, Jonathan J. Finley, Dorian Ziss, V. T. V. Lange, Julian Stangl, Silvana Botti, Philipp Staudinger, D. Busse, Claudia Rödl
Publikováno v:
Novel In-Plane Semiconductor Lasers XIX.
Hexagonal SiGe has been theoretically shown to feature a tunable direct bandgap in the range 0.4-0.8eV. We study arrays of site-selectively grown Si_(1-x)-Ge_x nanowires (NWs) grown using the crystal transfer method in which wurtzite GaP core NWs are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a381043b1eb8ff0580bffa1e0eecc0a7
https://doi.org/10.1117/12.2544968
https://doi.org/10.1117/12.2544968
Autor:
V. T. V. Lange, Claudia Rödl, Erik P. A. M. Bakkers, Alain Dijkstra, D. Busse, Elham M. T. Fadaly, Marcel A. Verheijen, Friedhelm Bechstedt, Jos E. M. Haverkort, Jens Renè Suckert, Jürgen Furthmüller, Jonathan J. Finley, Silvana Botti, M. A. J. V. Tilburg
Publikováno v:
Conference on Lasers and Electro-Optics.
Hexagonal SiGe is shown to feature a direct bandgap with a radiative strength comparable to InP. Surprisingly, it features a temperature independent emission strength, thus promising a silicon compatible laser tunable from 1.8 to 3.5 pm.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32be338a40472b99c5d851726a8a6c78
https://doi.org/10.1364/cleo_si.2020.sm3m.6
https://doi.org/10.1364/cleo_si.2020.sm3m.6