Zobrazeno 1 - 10
of 56
pro vyhledávání: '"M. A. Haase"'
Autor:
Karen M. Plevock Haase, Candice A. Price, Gina S. Wei, Ilana G. Goldberg, Bryan C. Ampey, Erynn A. Huff, Kimberly R. Durkin, Ashley E. Blair, Camille A. Fabiyi, Keisher S. Highsmith, Melissa S. Wong, David Clark, George A. Mensah
Publikováno v:
Implementation Science Communications, Vol 5, Iss 1, Pp 1-7 (2024)
Abstract The United States has seen increasing trends of maternal mortality in recent years. Within this health crisis there are large disparities whereby underserved and minoritized populations are bearing a larger burden of maternal morbidity and m
Externí odkaz:
https://doaj.org/article/e5b88db031c245f08e7279c6592b6012
Autor:
Shane Chen, Maria Lyanguzova, Ross Kaufhold, Karen M. Plevock Haase, Hangnoh Lee, Alexei Arnaoutov, Mary Dasso
Publikováno v:
Cell reports. 37(13)
Ran's GTPase-activating protein (RanGAP) is tethered to the nuclear envelope (NE) in multicellular organisms. We investigated the consequences of RanGAP localization in human tissue culture cells and Drosophila. In tissue culture cells, disruption of
Publikováno v:
Modern Magnetic Resonance ISBN: 9783319282756
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdceeb96d157e0ab2efb0ebfa368a99d
https://doi.org/10.1007/978-3-319-28275-6_101-1
https://doi.org/10.1007/978-3-319-28275-6_101-1
Autor:
M. A. Haase, Catherine A. Leatherdale, J. Xie, S. McKernan, Terry L. Smith, Ye Zhu, T. J. Miller, X. Sun
Publikováno v:
Scripta Materialia. 64:568-571
State-of-the-art green emission efficiency is achieved with CdMgZnSe color-converting heterostructures. A unique dark-line defect formation mechanism is revealed in CdMgZnSe green converters. Stacking faults extend horizontally inside the Mg-rich win
Publikováno v:
Journal of Display Technology. 6:639-644
The field of low-cost flexible displays has attracted an enormous amount of interest in the past few years. This paper analyzes the challenges associated with designing a backplane for an electrophoretic front plane and develops a general model which
Publikováno v:
Fortschritte der Neurologie · Psychiatrie. 68:380-386
Theoretical models suggest a higher vulnerability of chronic schizophrenic patients for critical life events and rapid change of objective living circumstances. On the basis of these models one may hypothesise that the political change in East German
Autor:
T. Marshall, Paul F. Baude, Kwok Keung Law, G. M. Haugen, M. Buijs, K.W. Haberern, M. A. Haase, Tj. Miller, J.M. Gaines
Publikováno v:
Materials Science and Engineering: B. 43:49-54
We have studied the device properties of blue-green II–VI lasers pertaining to the issues of thermal effects, leakage current and lateral waveguiding. Improved heat sinking by epi-down mounting was found to double the device lifetime. Leakage, main
Publikováno v:
Journal of Applied Physics. 77:3513-3517
Schottky contacts were formed on Cl‐doped N‐type lattice matching ZnS0.07Se0.93 epilayers grown on (100) N‐GaAs substrates by molecular beam epitaxy for metals with different work functions, Yb, Al, Cr, Cu, Au, and Pd. Temperature‐dependent c
Autor:
Fedja Kecman, Catherine A. Leatherdale, Todd A. Ballen, Andreas Biebersdorf, Terry L. Smith, Xiaoguang Sun, Amy S. Barnes, M. A. Haase, Jun-Ying Zhang, Hao Bing, Junqing Xie, Thomas J. Miller, Karl Engl, Stefan Groetsch, Joseph Yang, Ralph Wirth, James A. Thielen
Publikováno v:
SPIE Proceedings.
II-VI semiconductors can exhibit strong photoluminescence throughout the visible spectrum and are excellent candidates for filling the so-called "green gap". We report on the performance of green color-converted LEDs fabricated by bonding CdMgZnSe mu
Publikováno v:
Semiconductor Science and Technology. 6:A146-A151
The authors report the results of optical and electrical measurements performed on two pseudomorphic ZnSe/n+GaAs heterojunctions in which the ZnSe was grown by molecular beam epitaxy. One of the ZnSe epilayers was doped as a p-n junction using Li and