Zobrazeno 1 - 2
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pro vyhledávání: '"M. A. Gulyev"'
Autor:
S. P. Shlyakhtenkov, M. A. Gulyev, V. S. Vyplaven, A. A. Popkov, S. A. Bekher, A. N. Kurbatov, A. L. Bobrov
Publikováno v:
Kontrol'. Diagnostika. :36-43
In the context of improving methods and means of non-destructive testing (NDT), along with increasing in formativeness, complex technical problems arise. For example, when examining structural elements with a service life of more than 20 – 30 years
Publikováno v:
Microelectronic Engineering. 66:385-391
The formation of electrically active shallow centers in electron-irradiated silicon annealed in the range 400-700 °C was investigated. Radiation-enhanced formation of thermal donors (TDs) was observed at T ∼ 400 °C. Non-uniform generation of TDs