Zobrazeno 1 - 10
of 27
pro vyhledávání: '"M. A. G. Halliwell"'
Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d1b882b6ac89dcc2e24fcba2cb6d34b
https://doi.org/10.1201/9781003069621-96
https://doi.org/10.1201/9781003069621-96
Publikováno v:
Microscopy of Semiconducting Materials, 1983
Scopus-Elsevier
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97a5061a26bc72511d980d9bb516b954
https://doi.org/10.1201/9781003069614-55
https://doi.org/10.1201/9781003069614-55
Autor:
M. A. G. Halliwell
Publikováno v:
Applied Physics A Solids and Surfaces. 58:135-140
X-ray rocking curves are widely used to study semiconductor heteroepitaxial structures. Examples are given of the use of rocking curves to investigate crystal growth problems, determine layer growth rates, confirm layer thicknesses and to determine t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a9f2e081fbffa3d33385265e112be50
https://doi.org/10.1007/bf00324368
https://doi.org/10.1007/bf00324368
Autor:
M.A.Z. Rejman-Greene, M.H. Lyons, S.J. Amin, P.J. Skevington, Graham J. Davies, M. A. G. Halliwell
Publikováno v:
Journal of Crystal Growth. 120:328-332
InP/InGaAs multiple quantum well structures with up to 200 periods have been grown by CBE. These structures exhibit exceptional lateral uniformity, measured as ±1 A in period, ±13 ppm in lattice mismatch and ±0.5 nm in wavelength across a 2 inch w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7df232d4c8dc4286c945bb758d528e8e
https://doi.org/10.1016/0022-0248(92)90412-c
https://doi.org/10.1016/0022-0248(92)90412-c
Autor:
David Bowen, David Gordon-Smith, C.J. Gibbings, Linn W. Hobbs, Linda Hart, M. A. Capano, C.R. Thomas, M. A. G. Halliwell
Publikováno v:
Journal of Crystal Growth. 116:260-270
The lattice relaxation of strained Si 1− x Ge x layers on Si (001) substrates has been examined. Three specimens consisting of a single Si 1− x Ge x layer were grown by molecular beam epitaxy. All layers were grown with a nominal composition of x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c315ecb5b80770c45a0ca351ee28358
https://doi.org/10.1016/0022-0248(92)90632-s
https://doi.org/10.1016/0022-0248(92)90632-s
Publikováno v:
Applied Physics Letters. 56:460-462
The critical thickness for Si1−xGex strained layers for the alloy range 0 ∼104 , cm−2) whereas in thinner strained epilayers, below the thermodynamic stability curve, no misfit dislocations were found. Nomarski micr...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7cdfb33660868053efcaed724835e14
https://doi.org/10.1063/1.102765
https://doi.org/10.1063/1.102765
Publikováno v:
Applied Physics Letters. 56:140-142
Misfit dislocations oriented in a specific 〈110〉 direction have been produced in strained Si1−xGex epitaxial layers deposited on Si(001), using sites of localized crystallographic damage as dislocation sources. During a high‐temperature annea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::955998da93f8f7481da110f398dbb08d
https://doi.org/10.1063/1.103054
https://doi.org/10.1063/1.103054
Publikováno v:
MRS Proceedings. 202
Relaxation in a 3μm epitaxial layer of GaAsSb on GaAs, a 1μm layer of InGaAs on InP and an InGaAs superlattice on InP has been investigated by double crystal X-ray diffractometry and double crystal X-ray synchrotron topography and found to be asymm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdd0a69202963ca17e406087b5131c63
https://doi.org/10.1557/proc-202-513
https://doi.org/10.1557/proc-202-513
Publikováno v:
Journal of Crystal Growth. 68:523-531
A recently developed computational method has been used to calculate X-ray double crystal rocking curves from hetero-epitaxial layers. The importance of quantitative interpretation of diffraction data is demonstrated. 004 CuKα 1 rocking curves from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::299d5a3f94ea547028a7bf496bea8e4d
https://doi.org/10.1016/0022-0248(84)90459-7
https://doi.org/10.1016/0022-0248(84)90459-7
Publikováno v:
Thin Solid Films. 183:171-182
The structural stability of Si 1− x Ge x /Si strained layers grown by molecular beam epitaxy (MBE) was investigated during thermal cycles similar to those used in silicon integrated circuit processing. Temperature excursions well above the MBE grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5026b70dd931554a94e35062f258745a
https://doi.org/10.1016/0040-6090(89)90442-2
https://doi.org/10.1016/0040-6090(89)90442-2