Výsledky vyhledávání - "M. A. Di-Forte Poisson"

Akademický článek

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

Autor: G. Naresh-Kumar, A. Vilalta-Clemente, S. Pandey, D. Skuridina, H. Behmenburg, P. Gamarra, G. Patriarche, I. Vickridge, M. A. di Forte-Poisson, P. Vogt, M. Kneissl, M. Morales, P. Ruterana, A. Cavallini, D. Cavalcoli, C. Giesen, M. Heuken, C. Trager-Cowan

Publikováno v: AIP Advances, Vol 4, Iss 12, Pp 127101-127101-13 (2014)

We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al2O3 high electron mobility transistor (HEMT) heterostructure grown by metal

Externí odkaz: https://doaj.org/article/9a46295aa3e341238236b26840a9191f

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Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

Autor: Sylvain Delage, M. Jurkovič, A. Alexewicz, Dionyz Pogany, Dagmar Gregušová, Karol Fröhlich, Jan Kuzmik, M.-A. di Forte Poisson, K. Cico, Gottfried Strasser

Publikováno v: Solid-State Electronics. 67:74-78

We report on preparation and electrical characterization of InAlN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors (MOS HEMTs) with Al2O3 gate insulation and surface passivation. About 12 nm thin high-κ dielectric film was de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fa7c6b190cd5cb0f82d9155165940ab3
https://doi.org/10.1016/j.sse.2011.09.002

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LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

Autor: Erwan Morvan, Eleftherios Iliopoulos, Christophe Gaquiere, N. Sarazin, A. Piotrowska, Marek Guziewicz, P. Kominou, M. Tordjman, J. Di Persio, Sylvain Delage, M. Oualli, Eric Chartier, Alexandros Georgakilas, M. Magis, Eliana Kamińska, M.-A. di Forte Poisson, R. Langer

Publikováno v: physica status solidi (c)
physica status solidi (c), Wiley, 2010, 7, pp.1317-1324. ⟨10.1002/pssc.200983114⟩
physica status solidi (c), 2010, 7, pp.1317-1324. ⟨10.1002/pssc.200983114⟩

In this paper we report on low-pressure metalorganic vapour deposition of InAlN/GaN heterostructures grown on different substrates (Sapphire, bulk SiC, composite SiCopSiC) for HEMT applications, and on first device performances obtained with these he

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b864d9cc17599c70a1bb88915dedff17
https://doi.org/10.1002/pssc.200983114

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InAlN/GaN MOS-HEMT WITH THERMALLY GROWN OXIDE

Autor: Christophe Gaquiere, Farid Medjdoub, J.-F. Carlin, Sylvain Delage, Nicolas Grandjean, M-A. Di Forte-Poisson, Erhard Kohn, Mohammed Alomari

Publikováno v: International Journal of High Speed Electronics and Systems
International Journal of High Speed Electronics and Systems, World Scientific Publishing, 2009, 19, pp.137-144. ⟨10.1142/S0129156409006187⟩
International Journal of High Speed Electronics and Systems, 2009, 19, pp.137-144. ⟨10.1142/S0129156409006187⟩

We report on the investigation of lattice matched InAlN / GaN MOS-HEMT structures prepared by thermal oxidation at 800 °C in oxygen atmosphere for two minutes. The gate leakage current was reduced by two orders of magnitude. Pulse measurements showe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::075f4bd2e7d399b9d7f4be93f578fcbc
https://doi.org/10.1142/s0129156409006187

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GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application

Autor: Robert Langer, Erwan Morvan, J. Thorpe, Christophe Gaquiere, N. Sarazin, Béla Pécz, Lajos Tóth, M. Tordjman, Raphaël Aubry, J. Di Persio, M.-A. di Forte Poisson, M. Magis, Virginie Hoel, Gaudenzio Meneghesso, Marek Guziewicz, Sylvain Delage, J.C. Jacquet

Publikováno v: Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2008, 310, pp.5232-5236. ⟨10.1016/j.jcrysgro.2008.08.035⟩
Journal of Crystal Growth, 2008, 310 (23), pp.5232-5236. ⟨10.1016/j.jcrysgro.2008.08.035⟩

This paper reports on low-pressure metalorganic vapour deposition (LP-MOCVD) growth optimisation of GaAlN/GaN heterostructures grown on SiCopSiC (silicon carbide-oxyde-polycrystalline silicon carbide) composite substrates for HEMT applications, and o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae1d64143ba5aed117bf021343399bd4
https://doi.org/10.1016/j.jcrysgro.2008.08.035

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Aluminium incorporation in AlxGa1−xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction

Autor: Andrés Redondo-Cubero, Raúl Gago, E. Muñoz, A.F. Braña, F. González-Posada, M.-A. di Forte Poisson, U. Kreissig

Publikováno v: Thin Solid Films. 516:8447-8452

The Al content in Al x Ga 1 − x N/GaN heterostructures has been determined by X-ray diffraction (XRD) and contrasted with absolute measurements from ion beam analysis (IBA) methods. For this purpose, samples with 0.1 x x > 0.2. The assessment of Al

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b130c1c9e7283ace24fd6c05d500e85c
https://doi.org/10.1016/j.tsf.2008.04.069

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Structural characterisation of GaAlN/GaN HEMT heterostructures

Autor: M.-A. di Forte Poisson, M. Magis, N. Sarazin, O. Durand, J. Di Persio

Publikováno v: Applied Surface Science. 253:228-231

(GaN/GaAlN/GaN)//Al2O3(00.1) HEMT heterostructures have been studied by X-ray scattering techniques, transmission electron microscopy and atomic force microscopy. X-ray reflectometry has been used to determine with a high accuracy both the individual

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cfe8faeccdb010e22a0ed5234d9ffd49
https://doi.org/10.1016/j.apsusc.2006.05.100

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MOCVD growth of group III nitrides for high power, high frequency applications

Autor: M. Tordjman, M. Magis, M.-A. di Forte Poisson, N. Sarazin, J. Di Persio

Publikováno v: physica status solidi (c). 2:947-955

This chapter reports on the low-pressure metal organic chemical vapor deposition (LP-MOCVD) growth optimization of bulk GaN, GaAlN materials, and GaAlN/GaN heterostructures grown on sapphire and silicon carbide substrates for metal semiconductor fiel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::794a80701e74ad6e52872efe19e8d400
https://doi.org/10.1002/pssc.200460600

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TEM investigation of defect structure in GaAlN/GaN heterostructures

Autor: M. A. di Forte-Poisson, Zs. Makkai, Béla Pécz

Publikováno v: Vacuum. 71:159-163

GaAlN/GaN layers are promising candidates as base materials for novel microelectronic devices. The electronic properties of these devices are strongly influenced by the density of threading dislocations, inversion domains and the inverted hexagonal p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::25c4ef99edd04afe2dabf6ded5ddd246
https://doi.org/10.1016/s0042-207x(02)00731-5

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Ti3SiC2 formed in annealed Al/Ti contacts to p-type SiC

Autor: J. Vacas, M. A. di Forte-Poisson, Béla Pécz, Lajos Tóth

Publikováno v: Applied Surface Science. 206:8-11

Al (150 nm)/Ti (30 nm) contacts have been successively deposited onto p-type 6H–SiC wafers. The layer structure has been annealed at 900 °C for 4 min. The annealed contacts are Ohmic. The structure of the annealed contact layers was identified as

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3d31022a9759f6dd142514b3c6a6f921
https://doi.org/10.1016/s0169-4332(02)01195-9

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