Zobrazeno 1 - 10
of 21
pro vyhledávání: '"M. A. DI STEFANO"'
Publikováno v:
Materials Science Forum. 897:181-184
4H-SiC defects evolution after thermal processes has been evaluated. Different annealing temperatures have been used to decrease the defect density of epitaxial layer (as stacking faults) and recover the damage occurred after ion implantation. The pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b32d845a111e5f87f218b58f8a261f8e
https://doi.org/10.4028/www.scientific.net/msf.897.181
https://doi.org/10.4028/www.scientific.net/msf.897.181
Autor:
Stefania Privitera, Grazia Litrico, M. A. Di Stefano, Simona Lorenti, Alfio Russo, F. La Via, Salvo Coffa, Nicolò Piluso, Enzo Fontana
Publikováno v:
MRS Advances. 1:3673-3678
In this paper the defects generated by ion implantation in 4H-SiC DIMOSFET (Double Implanted MOSFETs), and their evolution after annealing process, have been studied in detail. The point defects generated by the source or body implantation process ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d44c3c7e70d935620635c04467482ef
https://doi.org/10.1557/adv.2016.366
https://doi.org/10.1557/adv.2016.366
Autor:
L. Trezzi, L. Pagani, Marco Tinelli, M. G. Di Stefano, S. Mannino, S. Lucchi, M. Villa, L. Macchi, Alessandra Piatti, A. Pavan, R. D’Angelo
Publikováno v:
Infection. 39:353-358
Little data are available on the frequency and risk factors for infection in patients in rehabilitation units.This was a 2-year retrospective cohort study conducted in 131 rehabilitation units (RUs) of the Lombardy Region, including those for patient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b489a9028ad99d49515dcb785cb91a2a
https://doi.org/10.1007/s15010-011-0152-2
https://doi.org/10.1007/s15010-011-0152-2
Autor:
R. D'Elía, Angelita Martínez, H. Cánepa, Myriam H. Aguirre, M. C. Di Stefano, A. B. Trigubó, U. Gilabert, E. Heredia
Publikováno v:
Crystal Research and Technology. 45:817-824
ZnTe ingots were obtained by the physical transport method, using an in-house designed and built tubular furnace. The growth of ZnTe subsequently to the growth of a seed of this material allowed obtaining an ingot formed by only one large and single
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4baab13f6cb6a134871f72338f68eba6
https://doi.org/10.1002/crat.200900297
https://doi.org/10.1002/crat.200900297
Publikováno v:
Crystal Research and Technology. 39:881-885
Hg 1-xCd xTe (MCT) epitaxial films have been grown employing single crystalline substrates of CdTe and Cd 0.96Zn 0.04Te with (211)Cd and (211)Te crystalline orientations. The Isothermal Vapor Phase Epitaxy (ISOVPE) technique without Hg overpressure h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d8aa8e8025891069a6670cbcd5bd0428
https://doi.org/10.1002/crat.200410271
https://doi.org/10.1002/crat.200410271
Publikováno v:
Acta Neurologica Scandinavica. 105:83-87
Objectives– To evaluate long-term results of chronic intrathecal Baclofen infusion on the spasticity, on the spasms and to evaluate the side-effects of the intrathecal Baclofen in patients with supraspinal spasticity. Clinical materials and methods
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ad4edbe256e191f13cf8eda692e347c
https://doi.org/10.1034/j.1600-0404.2002.1o042.x
https://doi.org/10.1034/j.1600-0404.2002.1o042.x
Autor:
E. Centurioni, Caterina Summonte, R. Lo Savio, Francesca Simone, Maria Miritello, Salvatore Mirabella, R. Agosta, Antonio Terrasi, A. Desalvo, S. Di Marco, M. Allegrezza, M. A. Di Stefano, Mariaconcetta Canino
Publikováno v:
Physica status solidi. C, Current topics in solid state physics (Internet) 8 (2011): 996–1001. doi:10.1002/pssc.201000413
info:cnr-pdr/source/autori:Summonte C, Centurioni E, Canino M, Allegrezza M, Desalvo A, Terrasi A, Mirabella S, Di Stefano MA, Miritello M, Lo Savio R, Simonte F, Agosta R/titolo:Optical properties of silicon rich oxides/doi:10.1002%2Fpssc.201000413/rivista:Physica status solidi. C, Current topics in solid state physics (Internet)/anno:2011/pagina_da:996/pagina_a:1001/intervallo_pagine:996–1001/volume:8
info:cnr-pdr/source/autori:Summonte C, Centurioni E, Canino M, Allegrezza M, Desalvo A, Terrasi A, Mirabella S, Di Stefano MA, Miritello M, Lo Savio R, Simonte F, Agosta R/titolo:Optical properties of silicon rich oxides/doi:10.1002%2Fpssc.201000413/rivista:Physica status solidi. C, Current topics in solid state physics (Internet)/anno:2011/pagina_da:996/pagina_a:1001/intervallo_pagine:996–1001/volume:8
Thermally treated silicon rich oxides (SRO) used as starting material for the fabrication of silicon nanodots represent the basis of tunable bandgap nanostructured materials for optoelectronic and photonic applications. The optical modelization of su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::461b18d54451a1b1e02af7d09e4a0066
http://hdl.handle.net/20.500.11769/52403
http://hdl.handle.net/20.500.11769/52403
Autor:
Isodiana Crupi, Francesca De Simone, F. Priolo, R. Lo Savio, M. A. Di Stefano, S. Di Marco, G. Di Martino, Salvo Mirabella, Maria Miritello, S. Gibilisco
Publikováno v:
Journal of applied physics 108 (2010): 093507–093507. doi:10.1063/1.3503852
info:cnr-pdr/source/autori:Mirabella S, Di Martino G, Crupi I, Gibilisco S, Miritello M, Lo Savio R, Di Stefano MA, Di Marco S, Simone F, Priolo F/titolo:Light absorption and electrical transport in Si:O alloys for photovoltaics/doi:10.1063%2F1.3503852/rivista:Journal of applied physics/anno:2010/pagina_da:093507/pagina_a:093507/intervallo_pagine:093507–093507/volume:108
info:cnr-pdr/source/autori:Mirabella S, Di Martino G, Crupi I, Gibilisco S, Miritello M, Lo Savio R, Di Stefano MA, Di Marco S, Simone F, Priolo F/titolo:Light absorption and electrical transport in Si:O alloys for photovoltaics/doi:10.1063%2F1.3503852/rivista:Journal of applied physics/anno:2010/pagina_da:093507/pagina_a:093507/intervallo_pagine:093507–093507/volume:108
Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf054415d8feaf9543803346a7280745
http://hdl.handle.net/10447/176683
http://hdl.handle.net/10447/176683
Autor:
Nicolò Piluso, Massimo Camarda, Marco Mauceri, Guido Guglielmo Condorelli, Brunella Cafra, Corrado Bongiorno, M. Italia, M. A. Di Stefano, Andrea Severino, F. La Via, A. La Magna
Publikováno v:
Thin solid films
518 (2010): S165–S169. doi:10.1016/j.tsf.2009.10.080
info:cnr-pdr/source/autori:Severino A, Bongiorno C, Piluso N, Italia M, Camarda M, Mauceri M, Condorelli G, Di Stefano MA, Cafra B, La Magna A, La Via F/titolo:High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates/doi:10.1016%2Fj.tsf.2009.10.080/rivista:Thin solid films (Print)/anno:2010/pagina_da:S165/pagina_a:S169/intervallo_pagine:S165–S169/volume:518
518 (2010): S165–S169. doi:10.1016/j.tsf.2009.10.080
info:cnr-pdr/source/autori:Severino A, Bongiorno C, Piluso N, Italia M, Camarda M, Mauceri M, Condorelli G, Di Stefano MA, Cafra B, La Magna A, La Via F/titolo:High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates/doi:10.1016%2Fj.tsf.2009.10.080/rivista:Thin solid films (Print)/anno:2010/pagina_da:S165/pagina_a:S169/intervallo_pagine:S165–S169/volume:518
Growth of single crystal 3C-SiC films on large area off-axis (111) Si substrate by chemical vapour deposition technique is here reported. The growth was conducted on off-axis Si substrates due to the ability of the misorientation to reduce anti-phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::11bc3020b4f38fdc1b486830a170ab87
http://www.cnr.it/prodotto/i/36652
http://www.cnr.it/prodotto/i/36652