Zobrazeno 1 - 10
of 25
pro vyhledávání: '"M. A. Blount"'
Autor:
D. Towner, C. Ryder, M. A. Blount, C. Auth, K. Sethi, J. R. Weber, Che-Yun Lin, U. E. Avci, A. J. Welsh, C. M. Pelto, A. Kundu, R. Grover, Rahim Kasim, D. Seghete, A. Schmitz, J. Hicks
Publikováno v:
IRPS
We present a high density MIM decoupling capacitor that enables improved microprocessor performance by providing robust on-chip power supply droop reduction. The MIM dielectric is fabricated using ALD-deposited HfO 2 -Al 2 O 3 and HfO 2 -ZrO 2 high-k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::beb161d96fcf1b5e26d60236c1615071
https://doi.org/10.1109/irps45951.2020.9128312
https://doi.org/10.1109/irps45951.2020.9128312
Publikováno v:
Superlattices and Microstructures. 27:463-468
We study the low-temperature in-plane magnetoconductance of vertically coupled double quantum wires. Using a novel flip-chip technique, the wires are defined by two pairs of mutually aligned split gates on opposite sides of a ≤ 1 micron thick AlGaA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::832ec6c14e43035461e0f215651fb0d0
https://doi.org/10.1006/spmi.2000.0828
https://doi.org/10.1006/spmi.2000.0828
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 6:689-693
The authors report on their recent experimental studies of vertically-coupled quantum point contacts subject to in-plane magnetic fields. Using a novel flip-chip technique, mutually aligned split gates on both sides of a sub micron thick double quant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80f4fa21ab7b63dd31f243fbcacfa98b
https://doi.org/10.1016/s1386-9477(99)00174-5
https://doi.org/10.1016/s1386-9477(99)00174-5
Autor:
M.J. Hafich, M. A. Blount, Sungkwun Kenneth Lyo, W. E. Baca, J. S. Moon, J. A. Simmons, John L. Reno, Joel R. Wendt
Publikováno v:
Journal of Applied Physics. 84:5626-5634
We report on our work on the double electron layer tunneling transistor (DELTT), based on the gate-control of two-dimensional -- two-dimensional (2D-2D) tunneling in a double quantum well heterostructure. While previous quantum transistors have typic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::345bb616576170697547be4f9349b5f0
https://doi.org/10.1063/1.368610
https://doi.org/10.1063/1.368610
Publikováno v:
Semiconductor Science and Technology. 13:A180-A183
We demonstrate the double electron layer tunnelling transistor (DELTT), based on the gate control of two-dimensional-two-dimensional tunnelling in a double quantum well. Unlike previously proposed resonant tunnelling transistors, the DELTT is entirel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aa3ebe6ab17fe9be716af5a76fc98a0
https://doi.org/10.1088/0268-1242/13/8a/051
https://doi.org/10.1088/0268-1242/13/8a/051
Publikováno v:
Semiconductor Science and Technology. 13:A86-A89
We describe the first demonstration of dual-side electron beam lithography in achieving independent submicron gating in double quantum well devices. The technique utilizes the epoxy-bond and stop-etch process to remove the substrate material which al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::431fc3501f72378d842fde2ac8a73761
https://doi.org/10.1088/0268-1242/13/8a/026
https://doi.org/10.1088/0268-1242/13/8a/026
Publikováno v:
Physical Review B. 57:14882-14885
We investigate the transport properties of an extremely-coupled Al{sub x}Ga{sub 1{minus}x}As/GaAs double quantum well subject to in-plane magnetic fields B{sub {parallel}}. The coupling is sufficiently strong that the symmetric-antisymmetric gap ener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15bfc425c80f4606589ee2c41bc13383
https://doi.org/10.1103/physrevb.57.14882
https://doi.org/10.1103/physrevb.57.14882
Epoxy bond and stop-etch (EBASE) technique enabling backside processing of (Al)GaAs heterostructures
Autor:
N. E. Harff, W. E. Baca, H. C. Chui, Jerry A. Simmons, Marc E. Sherwin, M. A. Blount, Mark V. Weckwerth
Publikováno v:
Superlattices and Microstructures. 20:561-567
The epoxy bond and stop-etch (EBASE) technique enables both the frontside and the backside processing of very thin (∼3000A) GaAs/AlGaAs epitaxial layer structures. Using this technique, a conventionally processed epitaxial layer structure is invert
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf8cd26f179ec47caa134d2f72e1143c
https://doi.org/10.1006/spmi.1996.0115
https://doi.org/10.1006/spmi.1996.0115
Publikováno v:
Applied Physics Letters. 74:314-316
We demonstrate unipolar complementary circuits consisting of a pair of resonant tunneling transistors based on the gate control of 2D-2D interlayer tunneling, where a single transistor - in addition to exhibiting a welldefined negative-differential-r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::922d5ae9a77a2b1ea2baf51d0ea25923
https://doi.org/10.1063/1.123009
https://doi.org/10.1063/1.123009
