Výsledky vyhledávání - "M. A. Akmaev"

Growth of Si/Si1-xGex/Si (x < 0.1) Quantum Wells by Modulating the Ge Molecular Flow. II. Study of Properties

Autor: M. A. Akmaev, A. V. Klekovkin, V. A. Tsvetkov, I. P. Kazakov, S. A. Zinov’ev

Publikováno v: Bulletin of the Lebedev Physics Institute. 46:89-92

Single quantum wells in the Si1-xGex/Si (x < 0.1) system grown in the mode of molecular Ge flow modulation in forming the solid solution layer are studied. The grown heterostructures are investigated by the low-temperature photoluminescence method, a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d3bcd47fe1d2d7a6b82cf8ec25191976
https://doi.org/10.3103/s1068335619030047

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Growth of Si/Si1_xGex/Si (x < 0.1) Quantum Wells by Modulating Ge Molecular Flow. I. Molecular Beam Epitaxy

Autor: M. A. Akmaev, O. V. Uvarov, I. P. Kazakov, A. V. Klekovkin, V. A. Tsvetkov

Publikováno v: Bulletin of the Lebedev Physics Institute. 46:5-8

Single quantum wells in the system Si1_xGex/Si with x < 0.1 are grown by molecular-beam epitaxy in the mode of periodic Ge molecular flow interruption during the formation of the alloy layer. It allowed an increase in the operating current of the sou

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::101cad7674ba0f54625022cd24505a6a
https://doi.org/10.3103/s1068335619010020

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Nonexponential photoluminescence dynamics in an inhomogeneous ensemble of excitons in WSe$_2$ monolayers

Autor: A. I. Duleba, M. V. Pugachev, A. Yu. Kuntsevich, M. V. Kochiev, V. V. Belykh, M. A. Akmaev

The spectral and spatiotemporal dynamics of photoluminescence in monolayers of transition metal dichalcogenide WSe$_2$ obtained by mechanical exfoliation on a Si/SiO$_2$ substrate is studied over a wide range of temperatures and excitation powers. It

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4647ab07b05f16ea9f064e0cdd1daf7
http://arxiv.org/abs/2012.13181

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Phase transitions in a two-dimensional system of dipolar excitons in a double-well SiGe/Si heterostructure

Autor: V. V. Ushakov, M. A. Akmaev, Nikolai N. Sibeldin, A. V. Novikov, D. N. Lobanov, T. M. Burbaev

Publikováno v: Bulletin of the Russian Academy of Sciences: Physics. 81:341-344

The transition from a dipolar electron–hole liquid (EHL) to a spatially direct one in two-dimensional layers of a type II (buffer Si1–y Ge y )/tSi/sSi1–x Ge x /tSi/(cap Si1–y Ge y ) heterostructure is studied via photoluminescence spectroscop

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b8918f47730ab4838796e3b34f1c9f52
https://doi.org/10.3103/s1062873817030054

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Effect of a Low-Temperature Si Underlayer on the Photoluminescence of Misfit Dislocations in Si(001)Si1 − xGe x Heterostructures with Ge-Rich Alloy Layers

Autor: M. A. Akmaev, T. M. Burbaev

Publikováno v: Bulletin of the Russian Academy of Sciences: Physics. 82:409-411

The effect a low-temperature Si underlayer has on the photoluminescence of misfit dislocations in Si(001)Si1 – xGe x heterostructures with high Ge contents in a SiGe alloy layer is investigated. It is found that the introduction of this layer preve

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c9bf55afb1853370bea41b52d82fdeea
https://doi.org/10.3103/s1062873818040044

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Making van der Waals Heterostructures Assembly Accessible to Everyone

Autor: M. A. Akmaev, Sergey G Martanov, Mikhail V Pugachev, Vasilii V Belykh, Natalia K Zhurbina, Aleksandr Y. Kuntsevich, Aliaksandr I Duleba

Publikováno v: Nanomaterials
Nanomaterials, Vol 10, Iss 2305, p 2305 (2020)
Volume 10
Issue 11

Van-der Waals heterostructures assembled from one or few atomic layer thickness crystals are becoming increasingly more popular in condensed matter physics. These structures are assembled using transfer machines, those are based on mask aligners, pro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99b8a9bc58a48e7d0d74ff5a67e0cb43
https://doi.org/10.3390/nano10112305

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