Zobrazeno 1 - 10
of 14
pro vyhledávání: '"M. A. A. Pudenzi"'
Autor:
José Alexandre Diniz, Jacobus W. Swart, A. G. Felicio, J. Godoy Fo, M. A. A. Pudenzi, Ioshiaki Doi
Publikováno v:
Journal of Integrated Circuits and Systems. 1:41-47
Silicon oxynitride (SiOxNy) insulators have been obtained by nitrogen ion implantation into Si substrates prior to conventional or rapid thermal oxidation. These films have been used as gate insulators in nMOSFETs and MOS capacitors. nMOSFET electric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1f896fcedb6bae17ebba4d858d1afe9
https://doi.org/10.29292/jics.v1i2.263
https://doi.org/10.29292/jics.v1i2.263
Autor:
Lisandro Pavie Cardoso, Renata Villela Orloski, Jacobus W. Swart, Marcelo Assaoka Hayashi, M. A. A. Pudenzi
Publikováno v:
Journal of Molecular Catalysis A: Chemical. 228:177-182
We apply X-ray multiple diffraction (XRMD) as a high resolution probe for analyzing the amorphous-crystalline interface (Si interstitial rich region) for different implantation energies and thermal treatment conditions during the formation of a shall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b68cd10ebd6c38f69b978c5f14c01a2e
https://doi.org/10.1016/j.molcata.2004.09.074
https://doi.org/10.1016/j.molcata.2004.09.074
Publikováno v:
Journal of Non-Crystalline Solids. :197-200
We studied the structural and electrical properties of crystallized a-Si x Ge 1− x alloys with 0⩽ x ⩽1 on (1 0 0) GaAs substrates. Raman spectroscopy on laser crystallized films shows the Si–Si, Ge–Ge, and Si–Ge vibrations characteristic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9d6a00f9c2adef8e7e5925a207ed3f9
https://doi.org/10.1016/j.jnoncrysol.2004.02.052
https://doi.org/10.1016/j.jnoncrysol.2004.02.052
Publikováno v:
Thin Solid Films. 429:91-95
In this work we present a study on the carbon incorporation in InGaP layers grown by Chemical Beam Epitaxy as a function of growth temperature. Hall measurements show that the electron concentration increased from 2.3×1014 to 8.9×1016 cm−3 as the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16b788d86c61e77c5501b47112e31c67
https://doi.org/10.1016/s0040-6090(03)00060-9
https://doi.org/10.1016/s0040-6090(03)00060-9
Autor:
Antonio Ricardo Zanatta, Uwe Jahn, Paulo V. Santos, F. Dondeo, A. Trampert, David Comedi, M. A. A. Pudenzi, I. Chambouleyron
Publikováno v:
Journal of Non-Crystalline Solids. :137-142
We have investigated the crystallization and structuring of amorphous Ge (a-Ge) films deposited on crystalline GaAs (1 0 0) substrates by nanosecond laser pulses. Epitaxial Ge films on GaAs are obtained for laser fluencies that completely melt the Ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69f88105798ec790471dbbec72c6f9cc
https://doi.org/10.1016/s0022-3093(01)00998-x
https://doi.org/10.1016/s0022-3093(01)00998-x
Autor:
M.M.G. de Carvalho, José Roberto Ribeiro Bortoleto, Humberto R. Gutierrez, M. A. A. Pudenzi, Angelo L. Gobbi, Daniel Ugarte, Mônica A. Cotta
Publikováno v:
Physical Review B. 62:15409-15412
We have observed changes in the morphology of InP films grown in epiready and processed substrates. These changes are attributed to selective InP growth in areas in the submicron range due to the presence of C-based selective micromasks. Analyzing th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63a21698660fce946d8ded77d7833d99
https://doi.org/10.1103/physrevb.62.15409
https://doi.org/10.1103/physrevb.62.15409
Autor:
Lisandro Pavie Cardoso, Richard Landers, A Silva Filho, Newton C. Frateschi, M.M.G. de Carvalho, Jefferson Bettini, Mônica A. Cotta, M. A. A. Pudenzi
Publikováno v:
Journal of Crystal Growth. 208:65-72
We present a study on the growth of Be-doped InGaP layers lattice matched to GaAs substrates by chemical beam epitaxy. We show that the presence of the dopant affects not only electrical but the structural properties — crystal quality and morpholog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1110306df0eabfb6fccfe00fcc15d72f
https://doi.org/10.1016/s0022-0248(99)00461-3
https://doi.org/10.1016/s0022-0248(99)00461-3
Autor:
M.M.G. de Carvalho, Omar Teschke, Richard Landers, M. A. A. Pudenzi, C.F. de Souza, R.B. Martins, Mônica A. Cotta, K. M. I. Landers
Publikováno v:
Journal of Crystal Growth. 164:409-414
We present here a study on the growth of Be-doped InP films by metalorganic molecular beam epitaxy, showing changes in morphology related to the presence of the dopant on the growing surface. The actual Be concentration in the films reaches (1-2) x 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acc6eb824eaf044923b043c1131c9b8f
https://doi.org/10.1016/0022-0248(96)00029-2
https://doi.org/10.1016/0022-0248(96)00029-2
Publikováno v:
Applied Physics Letters. 78:1700-1702
Carbon was implanted into GaAs at the energy of 1 MeV with doses between 1×1013 and 2×1015 cm−2 at temperatures of 80 K, nominal room temperature (RT), and 300 °C. A markedly higher electrical activation was obtained in the samples implanted at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c555fc5a87558ac7d4106c18eb0b3011
https://doi.org/10.1063/1.1356729
https://doi.org/10.1063/1.1356729
Publikováno v:
Applied Physics Letters. 74:3669-3671
In this work, we present evidence that Be3P2 microcrystals are formed in Be-doped phosphorus-based semiconductor compounds grown by chemical beam epitaxy. Our results suggest that microcrystal formation occurs when high Be concentrations (>1018 cm−
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f24e74a32fb473b4eb9e78201574e2f3
https://doi.org/10.1063/1.123216
https://doi.org/10.1063/1.123216