Zobrazeno 1 - 10
of 498
pro vyhledávání: '"M. -H. Liao"'
Publikováno v:
AIP Advances, Vol 12, Iss 7, Pp 075117-075117-8 (2022)
The alleviation effect on the Schottky barrier height (SBH) (ΦB) using ultrathin titanium dioxide and hafnium dioxide dielectrics in a single layer and a bilayer stack was demonstrated. ΦB in the Pt/n-Si contact was reduced from 0.53 to −0.058, 0
Externí odkaz:
https://doaj.org/article/c14b08e4e861427799f9773a32479afb
Autor:
Y. -C. Chan, Nilabh Basu, T. -W. Chen, Y. -T. Tsai, H. -Y. Lin, S. -C. Chen, M. -H. Lee, M. -H. Liao
Publikováno v:
IEEE Transactions on Electron Devices. 70:3360-3364
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ea3d7f2932643a9e56308e72fd84c64
https://doi.org/10.1109/ted.2023.3267762
https://doi.org/10.1109/ted.2023.3267762
Autor:
K.-Y. Hsiang, J.-Y. Lee, Z.-F. Lou, F.-S. Chang, Y.-C. Chen, Z.-X. Li, M. H. Liao, C. W. Liu, T.-H. Hou, P. Su, M. H. Lee
Publikováno v:
IEEE Transactions on Electron Devices. 70:2142-2146
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab99eab5aad76f851d2ad5b8c86ab5b7
https://doi.org/10.1109/ted.2023.3238364
https://doi.org/10.1109/ted.2023.3238364
Autor:
Kuan-Ting Chen, Siang-Sheng Gu, Zheng-Ying Wang, Chun-Yu Liao, Yu-Chen Chou, Ruo-Chun Hong, Shih-Yao Chen, Hong-Yu Chen, Gao-Yu Siang, Chieh Lo, Pin-Guang Chen, M.-H. Liao, Kai-Shin Li, Shu-Tong Chang, Min-Hung Lee
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 900-904 (2018)
Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and
Externí odkaz:
https://doaj.org/article/542e8768d7ce43eeb099863d27bfde87
Autor:
K.-Y. Hsiang, C.-Y. Liao, J.-H. Liu, C.-Y. Lin, J.-Y. Lee, Z.-F. Lou, F.-S. Chang, W.-C. Ray, Z.-X. Li, H.-C. Tseng, C.-C. Wang, M. H. Liao, T.-H. Hou, M. H. Lee
Publikováno v:
IEEE Electron Device Letters. 43:1850-1853
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32d769bfc4175956bb62112231794890
https://doi.org/10.1109/led.2022.3204445
https://doi.org/10.1109/led.2022.3204445
Publikováno v:
IEEE Transactions on Electron Devices. 69:5386-5390
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a802e53574b37e9c204f841a22d90155
https://doi.org/10.1109/ted.2022.3193917
https://doi.org/10.1109/ted.2022.3193917
Autor:
C.-Y. Liao, K.-Y. Hsiang, C.-Y. Lin, Z.-F. Lou, Z.-X. Li, H.-C. Tseng, F.-S. Chang, W.-C. Ray, C.-C. Wang, J.-Y. Lee, P.-H. Chen, J.-H. Tsai, M.-H. Liao, M. H. Lee
Publikováno v:
IEEE Electron Device Letters. 43:1559-1562
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87b4dce0e41ef0845693386b47b5f4ec
https://doi.org/10.1109/led.2022.3189669
https://doi.org/10.1109/led.2022.3189669
Autor:
M.-C. Chen, S. Ohshita, S. Amano, Y. Kurokawa, S. Watanabe, Y. Imoto, Y. Ando, W.-H. Hsieh, C.-H. Chang, C.-C. Wu, S.-S. Chuang, H. Yoshida, M.-C. Lu, M.-H. Liao, S.-Z. Chang, S. Yamazaki
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a773905f641e2a6d3369e3e771f1f898
https://doi.org/10.1109/iedm45625.2022.10019324
https://doi.org/10.1109/iedm45625.2022.10019324
Publikováno v:
AIP Advances, Vol 8, Iss 1, Pp 015020-015020-4 (2018)
The electrical and thermo-electric (TE) properties of the bismuth telluride (BiTe) -based two-dimensional (2D) thermoelectric (TE) devices with different thin film thicknesses are analyzed systematically. The studied thin film thicknesses are covered
Externí odkaz:
https://doaj.org/article/e66eeb05ae48484db37b191b784006b2
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.