Zobrazeno 1 - 5
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pro vyhledávání: '"M. Çetin Arıkan"'
Publikováno v:
Applied Surface Science. 318:95-99
9th Nanoscience and Nanotechnology Conference (NANOTR) -- JUN 24-28, 2013 -- Erzurum, TURKEY
WOS: 000344380500018
In this work, observed zero-bias offsets in I-V characteristics and differences in J-V characteristics of staircase quantum we
WOS: 000344380500018
In this work, observed zero-bias offsets in I-V characteristics and differences in J-V characteristics of staircase quantum we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e44c1bde56f254aa00af318bf5a33058
https://doi.org/10.1016/j.apsusc.2014.01.054
https://doi.org/10.1016/j.apsusc.2014.01.054
Autor:
M. Çetin Arıkan, Neslihan Uzar
Publikováno v:
Bulletin of Materials Science. 34:287-292
Structural characterizations of wurtzite zinc sulfide (ZnS) nanostructures synthesized by vapour–liquid–solid technique (VLS) were carried out by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ec09416d712bcdbc612b29a286b95c6
https://doi.org/10.1007/s12034-011-0085-5
https://doi.org/10.1007/s12034-011-0085-5
3rd International Symposium on Growth of III-Nitrides (ISGN) -- JUL 04-07, 2010 -- Montpellier, FRANCE
WOS: 000301569300046
In this work, a quantum well infrared photodetector structure which consists of three different well thicknesses wit
WOS: 000301569300046
In this work, a quantum well infrared photodetector structure which consists of three different well thicknesses wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9cb77c0d6020df6a2388cab8e2a0551
https://hdl.handle.net/11421/16796
https://hdl.handle.net/11421/16796
Publikováno v:
SPIE Proceedings.
The operation of the Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure -- Vertical Cavity Surface Emitting Laser (HELLISH-VCSEL) devices is based on hot carrier transport parallel to the layers of Ga1-xAlxAs p-n junction. It is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0c1a8f90aa16406aca1e04ab6b7e2c0
https://doi.org/10.1117/12.591107
https://doi.org/10.1117/12.591107
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