Zobrazeno 1 - 10
of 282
pro vyhledávání: '"M-A Husanu"'
Autor:
L. L. Lev, I. O. Maiboroda, E. S. Grichuk, N. K. Chumakov, N. B. M. Schröter, M.-A. Husanu, T. Schmitt, G. Aeppli, M. L. Zanaveskin, V. G. Valeyev, V. N. Strocov
Publikováno v:
Physical Review Research, Vol 4, Iss 1, p 013183 (2022)
Band bending at semiconductor surfaces and interfaces is the key to applications ranging from classical transistors to topological quantum computing. A semiconductor particularly important for optical as well as microwave devices is GaN. What makes t
Externí odkaz:
https://doaj.org/article/4e91a7d66a564861aae5c4caa751f3cf
Autor:
L. L. Lev, I. O. Maiboroda, M.-A. Husanu, E. S. Grichuk, N. K. Chumakov, I. S. Ezubchenko, I. A. Chernykh, X. Wang, B. Tobler, T. Schmitt, M. L. Zanaveskin, V. G. Valeyev, V. N. Strocov
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-9 (2018)
Semiconductor heterostructures hosting two-dimensional electron gases are widely used today in high-electron-mobility transistors. Here, the authors probe the electronic structure in GaN/AlGaN, heterostructures, discovering planar anisotropy of the e
Externí odkaz:
https://doaj.org/article/d7a8ee1767ae4e4281aa37c8629d1091
Akademický článek
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Akademický článek
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Autor:
X. Wang, Claudia Cancellieri, Masaki Kobayashi, Zaher Salman, Vladimir N. Strocov, L. L. Lev, Jonas A. Krieger, Niels B. M. Schröter, Alla Chikina, M.-A. Husanu
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 236:1-8
Angle-resolved photoelectron spectroscopy (ARPES) is the main experimental tool to explore electronic structure of solids resolved in the electron momentum k . Soft-X-ray ARPES (SX-ARPES), operating in a photon energy range around 1 keV, benefits fro
Autor:
Georgia Andra Boni, Mihaela Botea, Stefan Neatu, Lucian Pintilie, Cristina Chirila, Ioana Pintilie, Lucian Trupina, M.-A. Husanu, Gwenael Le Rhun, Iuliana Pasuk, Bertrand Vilquin, L. D. Filip, Cosmin Marian Istrate
Publikováno v:
Materials Science and Engineering: B
Materials Science and Engineering: B, 2021, 266, ⟨10.1016/j.mseb.2021.115042⟩
Materials Science and Engineering: B, 2021, 266, ⟨10.1016/j.mseb.2021.115042⟩
International audience; Properties of epitaxial PbZr0.2Ti0.8O3 (PZT) films deposited on Si substrates were investigated for integration in the present CMOS technology. Polarization is downward oriented, in association with the presence of an internal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a50975696900860b12b38dc94a0b4c08
https://hal.science/hal-03622158
https://hal.science/hal-03622158
Autor:
Daniel Lizzit, Cristina Chirila, Lucian Trupina, M.-A. Husanu, Nicoleta G. Apostol, Cristian M. Teodorescu, Ioana A. Hristea
Gold is deposited on atomically clean, inwards polarized, ferroelectric lead zirco-titanate deposited by pulsed laser deposition on strontium titanate (001) single crystal, then carbon monoxide adsorption and desorption experiments are investigated b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27c7228722f4f356fa7bd7c8b2dbb5e1
http://hdl.handle.net/11390/1191785
http://hdl.handle.net/11390/1191785
Publikováno v:
Electronic Structure. 4:015003
Electronic structure of LaAlO3/SrTiO3 (LAO/STO) samples, grown at low oxygen pressure and post-annealed ex situ, was investigated by soft-x-ray ARPES focussing on the Fermi momentum (k F) of the mobile electron system (MES). X-ray irradiation of thes
Autor:
Vladimir N. Strocov, X. Wang, Thorsten Schmitt, M. L. Zanaveskin, L. L. Lev, N. K. Chumakov, M.-A. Husanu, B. Tobler, I. A. Chernykh, I. S. Ezubchenko, E. S. Grichuk, I. O. Maiboroda, V. G. Valeyev
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-9 (2018)
Nature Communications
Nature Communications
Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing spintronics, multiferroics, topological effects and other novel operational principles. Knowledge
Autor:
Dorota Bociaga, Mariana Carmen Chifiriuc, Coralia Bleotu, George E. Stan, Carmen Ristoscu, Veronica Lazar, Florin Miculescu, Maria Badiceanu, Ion N. Mihailescu, M.-A. Husanu, Emanuel Axente, Liviu Duta, Cristina Besleaga, Natalia Mihailescu
Publikováno v:
Applied Surface Science. 441:871-883
We report on Matrix-Assisted Pulsed Laser Evaporation (MAPLE) deposition of Carbon thin films, simple or reinforced with intended concentrations of Ag and Si. A KrF∗ (λ = 248 nm, τFWHM ≤ 25 ns, ν = 10 Hz) excimer laser was used for irradiation