Zobrazeno 1 - 10
of 39
pro vyhledávání: '"M Y, Simmons"'
Publikováno v:
npj Quantum Information, Vol 8, Iss 1, Pp 1-8 (2022)
Abstract The electron exchange interaction is a promising medium for the entanglement of single-spin qubits in semiconductors as it results in high-speed two-qubit gates. The quality of such entangling gates is reduced by the presence of noise caused
Externí odkaz:
https://doaj.org/article/11ad700562da4e96936e6c0b87d03790
Autor:
B. Voisin, J. Bocquel, A. Tankasala, M. Usman, J. Salfi, R. Rahman, M. Y. Simmons, L. C. L. Hollenberg, S. Rogge
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-11 (2020)
Coupled donor wavefunctions in silicon are spatially resolved to evidence valley interference processes. An atomic-scale understanding of the interplay between interference, envelope anisotropy and crystal symmetries unveils a placement strategy comp
Externí odkaz:
https://doaj.org/article/482d5468555841919a3bcc07ec60082d
Publikováno v:
New Journal of Physics, Vol 24, Iss 6, p 069501 (2022)
Externí odkaz:
https://doaj.org/article/a35c009c860a463fb1b9a515313d6882
Autor:
M. A. Broome, S. K. Gorman, M. G. House, S. J. Hile, J. G. Keizer, D. Keith, C. D. Hill, T. F. Watson, W. J. Baker, L. C. L. Hollenberg, M. Y. Simmons
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-7 (2018)
Donor impurities in silicon are promising candidates as qubits but in order to create a large-scale quantum computer inter-qubit coupling must be introduced by precise positioning of the donors. Here the authors demonstrate the fabrication, manipulat
Externí odkaz:
https://doaj.org/article/8bb6375d8b1f4be487168b3beb3afb69
Autor:
M. Kiczynski, S. K. Gorman, H. Geng, M. B. Donnelly, Y. Chung, Y. He, J. G. Keizer, M. Y. Simmons
Publikováno v:
Nature. 606:694-699
The realization of controllable fermionic quantum systems via quantum simulation is instrumental for exploring many of the most intriguing effects in condensed-matter physics1–3. Semiconductor quantum dots are particularly promising for quantum sim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a31bdfdc96de181745feafea440c678d
https://doi.org/10.1038/s41586-022-04706-0
https://doi.org/10.1038/s41586-022-04706-0
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-6 (2016)
The goal of quantum simulation is to probe many-body phenomena in controlled systems, but Fermi-Hubbard phenomena are typically hard to simulate in cold atomic. Here, the authors simulate them with subsurface dopants in silicon, achieving a low effec
Externí odkaz:
https://doaj.org/article/463a6d0695bf4a0991c08849bbfce74b
Publikováno v:
Physical Review X, Vol 9, Iss 4, p 041003 (2019)
Fault-tolerant quantum computation requires qubit measurements to be both high fidelity and fast to ensure that idling qubits do not generate more errors during the measurement of ancilla qubits than can be corrected. Towards this goal, we demonstrat
Externí odkaz:
https://doaj.org/article/41e17d631adf4173ae62093c0b7731cf
Publikováno v:
New Journal of Physics, Vol 21, Iss 6, p 063011 (2019)
Determination of qubit initialisation and measurement fidelity is important for the overall performance of a quantum computer. However, the method by which it is calculated in semiconductor qubits varies between experiments. In this paper we present
Externí odkaz:
https://doaj.org/article/e8c8eecca7e948b692a5b061acce194c
Autor:
P. Pakkiam, A. V. Timofeev, M. G. House, M. R. Hogg, T. Kobayashi, M. Koch, S. Rogge, M. Y. Simmons
Publikováno v:
Physical Review X, Vol 8, Iss 4, p 041032 (2018)
For solid-state spin qubits, single-gate rf readout can minimize the number of gates required for scale-up since the readout sensor can integrate into the existing gates used to manipulate the qubits. However, state-of-the-art topological error corre
Externí odkaz:
https://doaj.org/article/7364143e67724b9f9b381bc497288f38
Autor:
J. Salfi, B. Voisin, A. Tankasala, J. Bocquel, M. Usman, M. Y. Simmons, L. C. L. Hollenberg, R. Rahman, S. Rogge
Publikováno v:
Physical Review X, Vol 8, Iss 3, p 031049 (2018)
Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the electronic valley degree of freedom in silicon on exchange interactio
Externí odkaz:
https://doaj.org/article/6af3a15289f44198b0f1a154ed429270