Zobrazeno 1 - 10
of 29
pro vyhledávání: '"M Witzany"'
Autor:
M Witzany, T-L Liu, J-B Shim, F Hargart, E Koroknay, W-M Schulz, M Jetter, E Hu, J Wiersig, P Michler
Publikováno v:
New Journal of Physics, Vol 15, Iss 1, p 013060 (2013)
We report on strong mode coupling in closely spaced GaInP microdisk dimer structures including InP quantum dots as the active medium. Using electron beam lithography and a combination of dry- and wet-etch processes, dimers with inter-disk separations
Externí odkaz:
https://doaj.org/article/d7707d6209b64731a9317c19d89b5457
Autor:
Matthias Heldmaier, Peter Michler, M. Witzany, Jie Peng, Oliver G. Schmidt, Gabriel Bester, Armando Rastelli, C. Hermannstädter, Lijuan Wang
Publikováno v:
physica status solidi (b). 249:710-720
1 Institut fur Halbleiteroptik und Funktionelle Grenzflachen, Universitat Stuttgart, Allmandring 3, 70569 Stuttgart, Germany 2 Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan 3 Institut fur Integrative Nanowiss
Autor:
M. Witzany, Oliver G. Schmidt, Peter Michler, M. Seible, Michael Jetter, C. Hermannstädter, L. J. Wang, Robert Roßbach, Armando Rastelli, Matthias Heldmaier
Publikováno v:
Physical Review B. 85
We perform excited-state spectroscopy of single self-assembled lateral InGaAs quantum dot molecules embedded in a planar microcavity structure, which are grown using a combination of metal-organic vapor phase and solid-source molecular beam epitaxy.
Autor:
Michael Jetter, M. Witzany, Jan Wiersig, Peter Michler, Robert Roßbach, Wolfgang-Michael Schulz, Frank Jahnke, Evelyn L. Hu, Tsung-Li Liu
Publikováno v:
Physical Review B. 83
We investigated the photoluminescence from InP quantum dots incorporated in (Ga${}_{0.51}$In${}_{0.49}$)P microdisk structures. With increasing pump power we observe a transition to stimulated emission indicated by the S shape of the input-output cur
Autor:
Peter Michler, Matthias Heldmaier, Gabriel Bester, M. Witzany, Armando Rastelli, Suwit Kiravittaya, C. Hermannstädter, L. J. Wang, Jie Peng, Oliver G. Schmidt
Publikováno v:
Physical Review B. 81
We study the electronic and optical properties of laterally coupled InGaAs/GaAs quantum dot molecules under lateral electric field. We find that electrons perceive the double-dot structure as a compound single object, while the holes discern two well
Autor:
Gabriel Bester, M. Witzany, Oliver G. Schmidt, Armando Rastelli, L. J. Wang, Peter Michler, C. Hermannstädter, Matthias Heldmaier, Jie Peng, G. J. Beirne
We report on the charge carrier dynamics in single lateral quantum dot molecules and the effect of an applied electric field on the molecular states. Controllable electron tunneling manifests itself in a deviation from the typical excitonic decay beh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9677cb7601b6e7fd7fce6108a5ba26a9
Publikováno v:
Infrared Physics. 32:439-442
We report about n-InSb tunable photoconductive detectors with a high resolution in the FIR region. The detection range can be tuned from 10 to 500 wavenumbers as a function of magnetic field. The limiting process of the signal to noise ratio in InSb
Autor:
Klaus D. Jöns, M. Witzany, C. Hermannstädter, Matthias Heldmaier, G. J. Beirne, R. Hafenbrak, Peter Michler
Publikováno v:
Journal of Applied Physics. 111(6):063526
We investigate the photoluminescence polarization anisotropy of self-assembled individual lateral InGaAs/GaAs quantum dot molecules. In contrast to similarly grown single quantum dots, the dot molecules exhibit a remarkable degree of linear polarizat
Publikováno v:
Physical review letters. 70(17)
A new direct experimental technique to study the form of the hot electron distribution function is presented. Far infrared emission induced by a weak periodic potential is observed in high-mobility GaAs/AlGaAs heterostructures with extremely low elec
Autor:
M. Witzany, E Hu, Peter Michler, Robert Roßbach, T L Liu, Michael Jetter, Wolfgang-Michael Schulz
Publikováno v:
Journal of Physics: Conference Series. 210:012008
We report on optical investigations of InP quantum dots embedded in a wet-etched GaInP microdisk cavity. The structures exhibit modes with quality factors on the order of 104. A combination of consistent power-dependent measurements of the optical po