Zobrazeno 1 - 10
of 116
pro vyhledávání: '"M Wassermeier"'
Autor:
M. Wassermeier, V. Bressler-Hill, G. A. D. Briggs, K. Pond, W. H. Weinberg, Pierre Petroff, Roya Maboudian
Scanning tunneling microscopy and scanning tunneling spectroscopy have been used to investigate the structure and current–voltage [I(V)] characteristics of the molecular‐beam epitaxially grown, As‐rich GaAs(001)‐(2×4) surface. High‐resolut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddadb0e15d96bb9876ca8579e3329491
https://ora.ox.ac.uk/objects/uuid:4db30eca-f925-47e6-8d30-3859bdf36343
https://ora.ox.ac.uk/objects/uuid:4db30eca-f925-47e6-8d30-3859bdf36343
Publikováno v:
Semiconductor Science and Technology. 16:L40-L43
We investigate the impact of two-step molecular beam epitaxy on the performance of GRINSCH lasers with In0.22Ga0.78As and GaAs quantum wells (QWs) in the active region. The buried regrown interface lies in the Al-containing optical waveguide section.
Publikováno v:
Journal of Crystal Growth. :582-585
Surface cleaning procedures including atomic hydrogen-assisted oxide desorption, ozone stripping and reevaporation for overgrowth on GaAs and Al x Ga 1− x As are studied by secondary ion mass spectrometry, capacitance/voltage profiling and atomic f
Publikováno v:
Surface Science. 414:298-303
Si deposition at low substrate temperatures (240 and 360°C) on the GaAs(001)-(2×4) surface has been studied by scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED). The Si was deposited in the absence of a dir
Autor:
Manfred Ramsteiner, Lutz Däweritz, K. H. Ploog, M. Wassermeier, B Jenichen, K.-J. Friedland, R. Hey
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 2:867-872
Quantum wells (QWs) with short-period superlattice barriers are grown by molecular-beam epitaxy in two-dimensional island nucleation or step-flow growth mode. A pronounced roughening of step edges as imaged by atomic force microscopy for samples grow
Publikováno v:
Surface Science. 399:39-48
Low-temperature deposition by molecular beam epitaxy at 200–450°C and scanning tunneling microscopy have been used to study the incorporation of Be on the As-terminated GaAs(001)-(2 × 4) surface. The Be was found to preferentially occupy vacant G
Publikováno v:
Applied Surface Science. :181-186
The reconstruction and topography of the β-GaN(001) surface are investigated with scanning tunneling microscopy on GaN/GaAs(001) layers grown by molecular beam epitaxy. Two Ga-terminated reconstructions are observed: a (2 × 2)- and a novel (√10×
Autor:
E. A. Kondrashkina, Rolf Köhler, D. V. Novikov, Rudolf Hey, S. A. Stepanov, Martin Schmidbauer, M. Wassermeier, R. Opitz
Publikováno v:
Physical review / B 56(16), 10469-10482 (1997). doi:10.1103/PhysRevB.56.10469
Physical review / B 56(16), 10469 - 10482 (1997). doi:10.1103/PhysRevB.56.10469
The features of surface and interface roughness in crystalline AlAs/GaAs superlattices grown by molecular beam epitaxy on vicinal (001) GaAs substrates are studied b
The features of surface and interface roughness in crystalline AlAs/GaAs superlattices grown by molecular beam epitaxy on vicinal (001) GaAs substrates are studied b
Publikováno v:
Surface Science. 385:178-186
Using scanning tunneling microscopy and reflection high energy electron diffraction, we study the surface reconstructions of zincblende GaN(001) prepared by molecular beam epitaxy on GaAs(001). We observe a (2×2) and a ( 10 × 10 ) R18.4° reconstru
Publikováno v:
Journal of Crystal Growth. :383-386
We use molecular beam epitaxial growth in order to synthesize strain compensated GaAs AlAs-based distributed Bragg reflectors (DBR). The strain compensation is achieved by introducing carbon doping up to densities of about 2 × 10 20 cm −3 . The re