Current Crowding Study by IIR-LD in a 1.2 kV SiC Schottky Diode

Autor: M. Vellvehi, G. Giorgio, F. Bonet, E. Bochaca, O. Avino, Xavier Perpiñà, Phillippe Godignon, Xavier Jordà

Publikováno v: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

For the first time, die-level current crowding phenomena are analyzed at the microsecond timescale with an internal IR-Laser Deflection (IIR-LD) set-up. As a test vehicle, a 1.2 kVSiC Schottky diode ($1.6\times 1.6\mathrm{m}\mathrm{m}^{2}$ active are

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f962dea05386ff3b365cd154bfe7a3eb
https://doi.org/10.1109/ispsd46842.2020.9170194

Simulation-Based Analysis of Thermo-Mechanical Constraints in Packages for Diamond Power Devices

Autor: Naum Fuste, Xavier Perpiñà, M. Vellvehi, O. Avino, I. Obieta, Xavier Jordà, R. Seddon, Phillippe Godignon, J. Maudes

Publikováno v: 2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).

Diamond is one of the best wide band-gap semiconductor materials available for high power devices development in terms of high current capability, high temperature operability, breakdown voltage and switching speed. Unfortunately, fabrication technol

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::42547d31a2bdcb55354648d5bce6bcab
https://doi.org/10.1109/eurosime48426.2020.9152713

4H-SiC Digital Logic Circuitry Based on P+ Implanted Isolation Walls MESFET Technology

Autor: Mihaela Alexandru, José Millan, Phillippe Godignon, Viorel Banu, M. Vellvehi

Publikováno v: Materials Science Forum. :1048-1051

The design and development of SiC integrated circuits (ICs) nowadays is a necessity due to the increasing demand for high temperature intelligent power applications and intelligent sensors. Due to the superior electrical, mechanical and chemical prop

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e74b1a11969954f78c9141c5f38b6e1e
https://doi.org/10.4028/www.scientific.net/msf.740-742.1048

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High temperature behaviour of 3.5 kV 4H-SiC JBS diodes

Autor: P. Brosselard, X. Jorda, M. Vellvehi, P. Godignon, J. Millan, J.P. Bergman, B. Lambert

Publikováno v: Proceedings of the 19th IEEE International Symposium on Power Semiconductor Devices and IC's
ISPSD '07
ISPSD '07, May 2007, Jeju Island, South Korea. pp.285-288, ⟨10.1109/ISPSD.2007.4294988⟩

International audience; 4H-SiC JBS diodes have been manufactured on a Norstel epitaxied N/N+ substrate using a JTE as edge termination. A breakdown voltage higher than 3.5 kV has been measured on 0.16 and 2.56 mm2 diodes. The leakage current in the 2

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3490c599978e44e33b971f25d274aca
https://doi.org/10.1109/ispsd.2007.4294988