Zobrazeno 1 - 10
of 13
pro vyhledávání: '"M V Nakhimovich"'
Publikováno v:
Semiconductors. 55:840-843
Autor:
A. V. Malevskaya, N. A. Kalyuzhnyy, D. A. Malevskii, S. A. Mintairov, A. M. Nadtochiy, M. V. Nakhimovich, F. Y. Soldatenkov, M. Z. Shvarts, V. M. Andreev
Publikováno v:
Semiconductors. 55:686-690
Autor:
I. M. Gadzhiev, Alexey E. Zhukov, M. V. Nakhimovich, A. M. Nadtochii, R. A. Salii, S. A. Mintairov, M. Z. Shvarts, N. A. Kalyuzhnyi, M. V. Maksimov
Publikováno v:
Technical Physics Letters. 46:1219-1222
High-speed photodetectors (PDs) based on InGaAs/GaAs quantum well-dot (QWD) nanostructures with the frontal-end and back-end input of radiation have been studied. A PD with 40 rows of QWDs exhibited a spectral responsivity of up to 0.4 A/W in the 950
Autor:
Mikhail A. Mintairov, Nikolay A. Kalyuzhnyy, V. M. Emelyanov, R. A. Salii, D. A. Malevskiy, M. V. Nakhimovich, M. Z. Shvarts, Pavel V. Pokrovskiy, Sergey A. Mintairov
Publikováno v:
IEEE Electron Device Letters. 41:1324-1327
An option for the structural design of the metamorphic InGaAs photovoltaic converter is presented. The peculiarity of the proposed device is the ability to operate efficiently with the high-power 1064 nm laser radiation at the elevated up to +125°C
Autor:
V. M. Emelyanov, R. A. Salii, M. V. Nakhimovich, Nikolay A. Kalyuzhnyy, Sergey A. Mintairov, M. Z. Shvarts
Publikováno v:
Semiconductors. 54:476-483
The current–voltage characteristics of InxGa1 –xAs/GaAs metamorphic photovoltaic converters with built-in n-InGaAs/InAlAs Bragg reflectors are studied at an indium content of x = 0.025–0.24. The series resistance of the heterostructures is meas
Autor:
M. V. Nakhimovich, Nikolay A. Kalyuzhnyy, Pavel V. Pokrovskiy, M. Z. Shvarts, V. M. Emelyanov
Publikováno v:
Semiconductors. 53:1959-1963
p–i–n GaAs photovoltaic converters of modulated laser radiation (810–830 nm) transferring both energy (laser power) and information signal were developed. The capacitance and frequency characteristics of the photovoltaic converters at a constan
Publikováno v:
Technical Physics Letters. 47:290-292
Publikováno v:
Journal of Physics: Conference Series. 2103:012192
In the work, the effect of In0.8Ga0.2As quantum dots position in the i-region of a GaAs solar cell on its spectral and photoelectric characteristics has been investigated. Three solar cell structures were obtained by metal-organic vapor-phase epitaxy
Autor:
V. M. Emelyanov, S. A. Levina, Nikolay A. Kalyuzhnyy, M. V. Nakhimovich, Sergey A. Mintairov, M. Z. Shvarts
Publikováno v:
Optics Letters. 46:4928
Temperature dependencies of the refractive indices, n , for I n x G a 1 − x A s and I n x A l 1 − x A s metamorphic layers with x = 0.06 − 0.25 have been determined. For this purpose, we performed variable-temperature (80 to 400 K) measurements
The dependence of recombination in GaAs solar cells on the number of included GaInAs quantum objects
Autor:
M. Z. Shvarts, M. A. Mintairov, S. A. Mintairov, N. A. Kalyuzhnyy, V. V. Evstropov, M. V. Nakhimovich
Publikováno v:
Journal of Physics: Conference Series. 1695:012092
The experimental characteristics of GaAs p-i-n structures with InGaAs quantum objects (QOs) have been investigated. The study of electroluminescence spectra has shown that an increase of the number of QOs layers leads to relative increase in electrol