Zobrazeno 1 - 10
of 126
pro vyhledávání: '"M V Dorokhin"'
Autor:
M. V. Dorokhin, B. N. Zvonkov, P. B. Demina, N. V. Dikareva, A. V. Zdoroveishchev, A. V. Kudrin, O. V. Vikhrova, I. V. Samartsev, S. M. Nekorkin
Publikováno v:
Technical Physics. 66:1194-1199
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a347a238a367d0781056e7e43b9f942c
https://doi.org/10.1134/s106378422109005x
https://doi.org/10.1134/s106378422109005x
Autor:
B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, P. B. Demina, M. V. Dorokhin, M. N. Drozdov, D. A. Zdoroveyshchev, I. L. Kalentyeva, Yu. M. Kuznetsov, A. V. Kudrin, A. V. Nezhdanov, A. E. Parafin, D. V. Khomitsky
Publikováno v:
Physics of the Solid State. 63:1593-1600
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6d5e2def68b40600fa25aff91842b98
https://doi.org/10.1134/s106378342109047x
https://doi.org/10.1134/s106378342109047x
Autor:
Yu. M. Kuznetsov, M. V. Dorokhin, A. V. Nezhdanov, D. A. Zdoroveyshchev, V. P. Lesnikov, A. I. Mashin
Publikováno v:
Semiconductors. 55:749-754
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef11965e4c90a48ab991c98c8b399b6f
https://doi.org/10.1134/s1063782621090104
https://doi.org/10.1134/s1063782621090104
Autor:
M. V. Dorokhin, A. V. Zdoroveyshchev, M. P. Temiryazeva, A. G. Temiryazev, S. A. Nikitov, Yu. A. Dudin, O. V. Vikhrova, I. L. Kalentyeva, Alexandr V. Sadovnikov, A. V. Kudrin, Yu. A. Danilov
Publikováno v:
Physics of the Solid State. 63:386-394
The possibility of using implantation of 20-keV He+ ions for modification of the domain structure and magnetic properties of CoPt films (formed by the electron-beam evaporation method) with different cobalt contents (Co0.45Pt0.55 and Co0.35Pt0.65) ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13fc3429fd2291baa0461968a97d8734
https://doi.org/10.1134/s1063783421030082
https://doi.org/10.1134/s1063783421030082
Autor:
M. V. Dorokhin, A. V. Zdoroveyshchev, I. V. Erofeeva, A. A. Popov, Yu. M. Kuznetsov, V. N. Trushin, E.A. Uskova, P. B. Demina, E. A. Lantsev, Maksim Boldin
Publikováno v:
Nanosystems: Physics, Chemistry, Mathematics. 11:680-684
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a70a08c5d1ca3b696f928515367944f
https://doi.org/10.17586/2220-8054-2020-11-6-680-684
https://doi.org/10.17586/2220-8054-2020-11-6-680-684
Autor:
O. V. Vikhrova, Yu. A. Danilov, Fernando Iikawa, P. B. Demina, M. A. G. Balanta, Yu. M. Kuznetsov, M. V. Dorokhin, M. V. Ved
Publikováno v:
Semiconductors. 54:1341-1346
The results of studies of the time-resolved photoluminescence in semiconductor heterostructures containing two noninteracting InGaAs quantum wells in a GaAs matrix are reported. One of the quantum wells was undoped, and the other was uniformly doped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d7490168128257780f80c7abaf08df4
https://doi.org/10.1134/s1063782620100061
https://doi.org/10.1134/s1063782620100061
Autor:
M. V. Dorokhin, A. V. Zdoroveyshchev, Yu. A. Danilov, M. P. Temiryazeva, S. M. Plankina, P. B. Demina, O. V. Vikhrova, Ivan Antonov, B. N. Zvonkov, Aleksey Nezhdanov, M. N. Drozdov, R. N. Kriukov
Publikováno v:
Semiconductors. 54:956-960
A new method for depositing carbon films by the thermal decomposition of carbon tetrachloride (CCl4) in a hydrogen flux in a reactor for metal-organic chemical vapor deposition (MOCVD) at atmospheric pressure is developed. From the results obtained b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9cfd1e937a1d6d87ad1c8e496383727
https://doi.org/10.1134/s106378262008028x
https://doi.org/10.1134/s106378262008028x
Autor:
V.E. Milin, Yu. V. Usov, Yu. A. Danilov, P. B. Demina, M. V. Ved, M. V. Dorokhin, D. A. Pavlov, A. V. Kudrin, V. P. Lesnikov, A. V. Zdoroveishchev
Publikováno v:
Technical Physics Letters. 46:691-694
The possibility of using a diluted magnetic semiconductor (In, Fe)Sb as a functional layer for use in spintronics, namely, as a ferromagnetic injector in a spin light emitting diode, has been investigated. The luminescent characteristics, as well as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edb4a0b851a32976beb532456b862ab7
https://doi.org/10.1134/s1063785020070299
https://doi.org/10.1134/s1063785020070299
Autor:
N. P. Evsevskaya, Yu. M. Kuznetsov, Yu. Yu. Loginov, I. A. Tambasov, M. O. Gornakov, Ekaterina V. Tambasova, A. V. Lukyanenko, A. S. Voronin, M. V. Dorokhin
Publikováno v:
Physics of the Solid State. 62:1090-1094
The single-walled carbon nanotube-based thin films with a thickness from 11 ± 3 to 157 ± 18 nm have been formed using vacuum filtration. The thermal conductivity of the thin films as a function of thickness and temperature up to 450 K has been stud
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::decee37b8fc0e8bc3620f803a2a46e55
https://doi.org/10.1134/s1063783420060311
https://doi.org/10.1134/s1063783420060311
Autor:
I. L. Kalentyeva, O. V. Vikhrova, Yu. A. Danilov, E. A. Larionova, B. N. Zvonkov, O. A. Soltanovich, A. V. Kudrin, V. A. Koval’skii, M. V. Dorokhin, A. V. Zdoroveyshchev
Publikováno v:
Physics of the Solid State. 62:423-430
Diode p-(GaMn)As/n-InGaAs/n+-GaAs heterostructures with different thicknesses (from 5 to 50 nm) of the (Ga,Mn)As dilute magnetic semiconductor layer have been fabricated and studied. The negative magnetoresistance effect reaching 6–8% is observed i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e1fa9b6308af81e5a43ce708094b1d0
https://doi.org/10.1134/s1063783420030270
https://doi.org/10.1134/s1063783420030270