Zobrazeno 1 - 10
of 83
pro vyhledávání: '"M T Emeny"'
Magneto-transport at low temperature has been employed to study a series of p-type In0.18Ga0.82As/GaAs quantum wells with carrier concentrations in the range (1.5-4.3)*1011 cm-2. Tilting the field from the growth direction does not change the relativ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf599ca3871fdc73df3de595a1615896
https://ora.ox.ac.uk/objects/uuid:d962c663-0f36-499e-a6dc-ea89947e4d5d
https://ora.ox.ac.uk/objects/uuid:d962c663-0f36-499e-a6dc-ea89947e4d5d
Autor:
Louise Buckle, A. M. Gilbertson, Philip Derek Buckle, M. T. Emeny, Robin J. Nicholas, Tim Ashley, B. Nedniyom
We report measurements of the electron g-factor in InSb quantum wells using the coincidence technique, polarization transition, and temperature-dependent resistivity. All three methods show that there is a giant enhancement of the spin slitting which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e999de077997b1f2060812bc2897985c
https://doi.org/10.1103/physrevb.80.125328
https://doi.org/10.1103/physrevb.80.125328
Spin-resolved cyclotron resonance is observed in InSb/AlInSb quantum-well heterostructures. Spin-resolved transitions are identified for fields greater than 2.2 T and confirmed by k⋅p modeling. The cyclotron effective mass is calculated for a range
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f6f00a7c820390706bdd30acc73e89e
https://ora.ox.ac.uk/objects/uuid:74529ba1-84bd-4daa-9539-816541777ee5
https://ora.ox.ac.uk/objects/uuid:74529ba1-84bd-4daa-9539-816541777ee5
Autor:
H.L. Forman, M. T. Emeny, Neil Gordon, GR Nash, Timothy Ashley, S. J. Smith, P.B. Robinson, Louise Buckle, S. D. Coomber
Publikováno v:
IEEE Sensors Journal. 9:1240-1243
The properties of AlxIn1-xSb light-emitting diodes (LEDs) and photodetectors have been investigated to establish their suitability for methane sensing. Using these components it is possible to achieve good signal-to-noise values at both the character
Autor:
C. J. Bartlett, Timothy Ashley, Philip Derek Buckle, J. M. S. Orr, M. T. Emeny, M. Fearn, P.J. Wilding, Louise Buckle
Publikováno v:
Semiconductor Science and Technology. 21:1408-1411
Gate leakage currents in high performance InSb/AlInSb quantum well field effect transistors are presented. Thermionic emission theory for Schottky contacts, including the Schottky effect (image force lowering), is successfully used to explain the for
Autor:
Louise Buckle, S Muscat, C. J. Bartlett, John H. Jefferson, Ralph Stephen Hall, Keith James Nash, S. J. Smith, Geoffrey R. Nash, M. T. Emeny, Timothy Ashley
Publikováno v:
Semiconductor Science and Technology. 20:406-411
Scanning laser microscopy was used to characterize a lateral n–i–p junction formed in an InSb quantum well. Two-dimensional scans of photocurrent, measured at 77 K under illumination from either a 633 nm or 3.4 µm laser beam, showed a peak in th
Autor:
Keith James Nash, M. T. Emeny, Geoffrey R. Nash, John H. Jefferson, Philip Derek Buckle, C. J. Bartlett, S. J. Smith, Louise Buckle, Timothy Ashley
Publikováno v:
Semiconductor Science and Technology. 20:144-148
We have used a novel, simple technique based on bevel etching, to fabricate samples containing lateral n–i–p junctions in an InSb/InAlSb quantum well. The structure was designed by self-consistent solution of Schrodinger's and Poisson's equations
Autor:
Geoffrey R. Nash, David J. Hall, Janet E. Hails, G. Masterton, Jean Giess, M. T. Emeny, Neil Gordon, M. K. Ashby, Timothy Ashley, L. Haworth, J.C. Little
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 20:540-547
Infrared LEDs and negative luminescent devices, where less light is emitted than in equilibrium, have been attracting an increasing amount of interest recently. They have a variety of applications, including as a ‘source’ of IR radiation for gas
Publikováno v:
Journal of Crystal Growth. 158:15-27
The present work examines in detail heteroepitaxial In x Ga 1 − x As alloy layers on GaAs by use of complementary transmission electron microscopy and atomic force microscopy. The characteristics of the low In x -value, smooth growth regime are est
Autor:
M. T. Emeny, D. J. Mowbray, M. S. Skolnick, D. M. Whittaker, W. I. E. Tagg, Philip Derek Buckle, C. R. Whitehouse
Publikováno v:
Semiconductor Science and Technology. 9:1608-1615
An optical and electrical investigation of an asymmetric GaAs-AlGaAs-based double-barrier resonant-tunnelling structure containing a strained-layer InyGa1-yAs (y=0.11) quantum well region is reported. Photoluminescence (PL) and PL excitation (PLE) sp