Zobrazeno 1 - 10
of 25
pro vyhledávání: '"M T, Sultan"'
Autor:
Agust Valfells, Andrei Manolescu, H. G. Svavarsson, Hákon Örn Árnason, Movaffaq Kateb, M. T. Sultan
Publikováno v:
Nano Select, Vol 2, Iss 12, Pp 2346-2357 (2021)
The present work reports the evolution and growth of GeGaAs(O) polytype nanoislands over GaAs p‐type substrate with photoemission application in mind. Several morphological transformations from NIs to simultaneously present nanopits/holes are obser
Publikováno v:
2022 International Semiconductor Conference (CAS).
This study incorporates the structural and magnetic characterization of epitaxial Ni80Fe20 films grown by direct current magnetron sputtering on MgO(001) and MgO(001)||VN(001) substrates. A series of samples grown with different N2 flow settings for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6d8595c628310e8110beaaa6b15dbec
https://hdl.handle.net/20.500.11815/3930
https://hdl.handle.net/20.500.11815/3930
Publikováno v:
Ibn Al-Haitham Journal for Pure and Applied Sciences, Vol 25, Iss 3 (2017)
The ability of different alumina-grafted particles was examined for adsorption of phenol and p-chlorophenol under different conditions (i.e. concentrations and temperatures). Dispersion stability of alumina in liquid medium (water) was studied using
Externí odkaz:
https://doaj.org/article/7d3cc11054f14803ab227e3d979ca0a4
Autor:
Magdalena Lidia Ciurea, Valentin S. Teodorescu, Ionel Stavarache, H. G. Svavarsson, Constantin Logofatu, Andrei Manolescu, M. T. Sultan
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific Reports
Scientific Reports
Publisher's version (útgefin grein)
Films of SiGe nanocrystals (NCs) in oxide have the advantage of tuning the energy band gap by adjusting SiGe NCs composition and size. In this study, SiGe-SiO2 amorphous films were deposited by magnetron sput
Films of SiGe nanocrystals (NCs) in oxide have the advantage of tuning the energy band gap by adjusting SiGe NCs composition and size. In this study, SiGe-SiO2 amorphous films were deposited by magnetron sput
Autor:
H. G. Svavarsson, M. T. Sultan, S. Ingvarsson, Andrei Manolescu, Neculai Plugaru, R. Plugaru, E. Fakhri
Publikováno v:
2021 International Semiconductor Conference (CAS).
Silicon nanowires (SiNWs) hold potential applications in optoelectronics and SiNW-based optical sensors. Here, a photoluminescence study of SiNW arrays fabricated with a simple two-step silver (Ag) catalyzed etching of silicon wafers is presented. Th
Autor:
Andrei Manolescu, S. Ingvarsson, H. O. Arnason, U. B. Arnalds, Agust Valfells, H. G. Svavarsson, M. T. Sultan
Publikováno v:
2021 International Semiconductor Conference (CAS).
We investigate the formation and evolution of Ga droplets over GaAs (001) substrate with and without Ge top layer (8 nm). Various morphological transformation from holes to droplets formation were observed as a function of annealing parameters. It wa
Publikováno v:
2021 International Semiconductor Conference (CAS).
We investigate the structural morphology and electrical characteristics i.e., metal-insulator transition (MIT) of V 2 O 3 thin films grown by high power impulse magnetron sputtering on Al 2 O 3 (c, r, m and a-plane), Si/SiO 2 and Si/ SiO 2 /TiO 2 . T
Autor:
Snorri Ingvarsson, Andrei Manolescu, M. T. Sultan, Magdalena Lidia Ciurea, Jon Tomas Gudmundsson, H. G. Svavarsson
Publikováno v:
2021 International Semiconductor Conference (CAS).
We investigate the photoluminescence properties of structures comprising of Si1-xGex nanoparticles (NPs) within SiO2, GeO2, TiO2 and Ta2O5 oxide matrices. Of the investigated structures, it was observed that the structures with GeO2 and TiO2 matrices
Autor:
Jon Tomas Gudmundsson, A.V. Maraloiu, Ionel Stavarache, H. G. Svavarsson, Magdalena Lidia Ciurea, M. T. Sultan, Andrei Manolescu, Valentin S. Teodorescu
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 10, Iss 1, Pp 1873-1882 (2019)
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology
Publisher's version (útgefin grein)
Multilayer structures comprising of SiO2/SiGe/SiO2 and containing SiGe nanoparticles were obtained by depositing SiO2 layers using reactive direct current magnetron sputtering (dcMS), whereas, Si and Ge were
Multilayer structures comprising of SiO2/SiGe/SiO2 and containing SiGe nanoparticles were obtained by depositing SiO2 layers using reactive direct current magnetron sputtering (dcMS), whereas, Si and Ge were