Zobrazeno 1 - 10
of 37
pro vyhledávání: '"M T, Montojo"'
Publikováno v:
Materials Science and Engineering: B. 143:55-59
Surface morphology and electrical performance of Ti/Al/metal/Au multilayer schemes were studied and compared to identify the role of the barrier layer on contact reliability. In this metallization scheme, Ti and Ti–W were tested as intermediate lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::366d2b8100f41a19bab76ed5afef34f3
https://doi.org/10.1016/j.mseb.2007.07.004
https://doi.org/10.1016/j.mseb.2007.07.004
Autor:
G. Vergara, P. Rodriguez, M. C. Torquemada, F. J. Sánchez, L. J. Gómez, J. Plaza, M. T. Rodrigo, M. Verdú, R. Almazán, J. Diezhandino, M. T. Montojo, V. Villamayor, I. Catalán
Publikováno v:
Infrared Physics & Technology. 44:281-287
A technology for processing low-density uncooled focal plane arrays (FPAs) of polycrystalline PbSe has been developed. PbSe is deposited, processed and sensitised on substrates with two levels of metal separated by a thin dielectric layer of SiO 2 .
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34c2b93018d12c38a644713bd9404cb6
https://doi.org/10.1016/s1350-4495(03)00123-3
https://doi.org/10.1016/s1350-4495(03)00123-3
Autor:
Ángel Muñoz, M. Verdú, R. Almazán, V. Villamayor, M. C. Torquemada, M. T. Rodrigo, L. J. Gómez, M. T. Montojo, G. Vergara, F. J. Sánchez, P. Rodriguez
Publikováno v:
Journal of Applied Physics. 93:1778-1784
Lead selenide layers were obtained by thermal evaporation in vacuum on thermally oxidized silicon. As-deposited layers present no response to infrared radiation and an activation procedure is mandatory. The sensitization process described in this wor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::272d62adece1079effef82fac5166eb4
https://doi.org/10.1063/1.1534907
https://doi.org/10.1063/1.1534907
Autor:
Zahia Bougrioua, Pierre Ruterana, Tomas Palacios, J Sanchez-Osorio, M T Montojo, Eva Monroy, Ingrid Moerman, Fernando Calle, F. Omnès, M. Verdú, F. J. Sánchez
Publikováno v:
physica status solidi (a). 188:367-370
We compare the performance of Pt- and Ni-based Schottky contacts on Al x Ga 1-x N (x = 0, 0.31). Pt/Au contacts on GaN present lower leakage currents than Ni/Au, although they degrade at temperatures as low as 300 °C due to Pt-Au inter-diffusion. An
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4fe81041ebdc51d7d4a405a9a883e87
https://doi.org/10.1002/1521-396x(200111)188:1<367::aid-pssa367>3.0.co
https://doi.org/10.1002/1521-396x(200111)188:1<367::aid-pssa367>3.0.co
Autor:
Zahia Bougrioua, Eva Monroy, Ingrid Moerman, Elías Muñoz, M T Montojo, Fernando Calle, Jose Luis Pau, F. J. Sanchez, M Verdu, E. San Andrés, Franck Omnès
Publikováno v:
physica status solidi (a). 188:307-310
This work analyses the efficiency of AlGaN Schottky diode passivation by different dielectric layers. A significant reduction of leakage current and noise power spectral density was achieved with either SiO 2 from plasma-enhanced chemical vapour depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f0aa390f9af14d30a1823ccef5ba796
https://doi.org/10.1002/1521-396x(200111)188:1<307::aid-pssa307>3.0.co
https://doi.org/10.1002/1521-396x(200111)188:1<307::aid-pssa307>3.0.co
Autor:
E. Calleja, R. Almazán, G. Vergara, Jose Manuel G. Tijero, A Guzmán, José Luis Sánchez-Rojas, M T Montojo, F. J. Sánchez, E. Muñoz, M. Verdú, J. Hernando
Publikováno v:
Semiconductor Science and Technology. 16:285-288
We report on a novel voltage-tunable stacked bound to quasi-continuum quantum well infrared detector designed to work in two of the atmospheric windows (3-5 and 8-12 µm). In order to improve the growth process by molecular beam epitaxy, the abrupt i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17bd7d26a670d3de644a85a1a0815093
https://doi.org/10.1088/0268-1242/16/5/301
https://doi.org/10.1088/0268-1242/16/5/301
Publikováno v:
Semiconductor Science and Technology. 12:1654-1657
The characteristics of reactive ion etching of gallium nitride layers, using etching gas are investigated. The GaN etch rate is examined by varying the bias voltage and the flow rate of . For bias voltages in the range of 250 V to 400 V, the etch rat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13ef2a3a14e4b181debfc182bb89616b
https://doi.org/10.1088/0268-1242/12/12/019
https://doi.org/10.1088/0268-1242/12/12/019
Publikováno v:
Scopus-Elsevier
The influence of impurity concentration on the photoemission from Negative Electron Affinity (NEA) GaAs photocathodes has been investigated. Experimental curves of photoemission spectral sensitivity are obtained for several dopant concentrations and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d284f9832db1aa2d93d6e2c79b0ff125
https://doi.org/10.1016/s0042-207x(96)00234-5
https://doi.org/10.1016/s0042-207x(96)00234-5
Publikováno v:
Neurologia (Barcelona, Spain). 30(5)
Antibodies against a protein complex that includes voltage-gated potassium channels (VGKC) have been reported in patients with limbic encephalitis, peripheral nerve hyperexcitability, Morvan's syndrome, and a large variety of neurological syndromes.I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::5dfc54a00048cb44c1ad2e59a1357e0d
https://pubmed.ncbi.nlm.nih.gov/24485651
https://pubmed.ncbi.nlm.nih.gov/24485651
Autor:
R. Linares Herrero, A. Baldasano Ramírez, V. Villamayor, C. Fernández-Montojo, L Gómez, Gaston Vergara, M. T. Montojo, R. Gutiérrez Álvarez
Publikováno v:
SPIE Proceedings.
In this work a breakthrough in the field of low cost uncooled infrared detectors is presented: an 80x80 MWIR VPD PbSe detector monolithically integrated with the corresponding Si-CMOS circuitry. Fast speed of response and high frame rates are, until
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0b1e54b3a59bf95237413321fc6f11b
https://doi.org/10.1117/12.2015290
https://doi.org/10.1117/12.2015290