Zobrazeno 1 - 4
of 4
pro vyhledávání: '"M Svetlana Pejovic"'
Publikováno v:
Nuclear Technology and Radiation Protection, Vol 31, Iss 4, Pp 349-355 (2016)
The pMOS dosimeters sensitivity (Tyndall National Institute, Cork, Ireland) to gamma and X-ray irradiation and 2000 h fading at room temperature is presented. The radiation fields were created using a 60Co source for two dose ranges (1-5 Gy and 10-50
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2641c372ae89793ac51759af2286f763
http://www.doiserbia.nb.rs/img/doi/1451-3994/2016/1451-39941604349P.pdf
http://www.doiserbia.nb.rs/img/doi/1451-3994/2016/1451-39941604349P.pdf
Publikováno v:
Nuclear technology and radiation protection
Nuclear Technology and Radiation Protection, Vol 29, Iss 3, Pp 179-185 (2014)
Nuclear Technology and Radiation Protection, Vol 29, Iss 3, Pp 179-185 (2014)
In this paper, the results of radiation sensitive field effect transistors (Al-gate p-channel metal-oxide-semiconductor field effect transistors) sensitivity to gamma and X-ray irradiation are presented. Radiation fields were created using 60Co sourc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2892ee5eecbd3b08e1ac10547a170211
https://doi.org/10.2298/ntrp1403179p
https://doi.org/10.2298/ntrp1403179p
Publikováno v:
Nuclear Technology and Radiation Protection, Vol 27, Iss 1, Pp 64-69 (2012)
A non-invasive ultrasonographic assessment of systolic ejection peak in the middle cerebral artery is very efficient in detection of anomalies in alloimmunized pregnancies and is a diagnostic method of choice prior to cordocentesis. This is applied i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21fe6c3237ab3b6515a070c369f4b4f8
https://doi.org/10.2298/ntrp1201064p
https://doi.org/10.2298/ntrp1201064p
Publikováno v:
Nuclear Technology and Radiation Protection, Vol 26, Iss 3, Pp 261-265 (2011)
Nuclear technology and radiation protection
Nuclear technology and radiation protection
Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the change
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ca35131528a5abd4fadf8cdc931ecd5
https://doi.org/10.2298/ntrp1103261p
https://doi.org/10.2298/ntrp1103261p