Zobrazeno 1 - 10
of 53
pro vyhledávání: '"M Steinmair"'
Autor:
W Langsteger, A Rezaee, W Loidl, HS Geinitz, F Fitz, M Steinmair, G Broinger, L Pallwien-Prettner, M Beheshti, L Imamovic, G Rendl, D Hackl, O Tsybrovsky, K Emmanuel, F Moinfar, C Pirich, A Bytyqi, G Karanikas, M Mayerhöfer, O Koperek, B Niederle, M Hartenbach, T Beyer, K Herrmann, J Czernin, I Rausch, P Rust, MD DiFranco, M Lassen, A Stadlbauer, ME Mayerhöfer, M Hacker, K Binzel, R Magnussen, W Wei, MU Knopp, DC Flanigan, C Kaeding, MV Knopp, A Leisser, M Nejabat, G Kramer, M Krainer, A Haug, Wencke Lehnert, Karl Schmidt, Sharok Kimiaei, Marcus Bronzel, Andreas Kluge, CL Wright, J Zhang, Evan Wuthrick, Piotr Maniawski, M Blaickner, E Rados, A Huber, M Dulovits, H Kulkarni, S Wiessalla, C Schuchardt, RP Baum, B Knäusl, D Georg, M Bauer, B Wulkersdorfer, W Wadsak, C Philippe, H Haslacher, M Zeitlinger, O Langer, M Feldmann, R Karch, MJ Koepp, M-C Asselin, E Pataraia, M Zeilinger, M Dumanic, F Pichler, J Pilz, M Mitterhauser, L Nics, B Steiner, A Traxl, Thomas Wanek, Kushtrim Kryeziu, Severin Mairinger, Johann Stanek, Walter Berger, Claudia Kuntner, Oliver Langer, S Mairinger, T Wanek, M Krohn, J Stanek, T Filip, M Sauberer, C Kuntner, J Pahnke, D Svatunek, C Denk, M Wilkovitsch, C Kuntner-Hannes, J Fröhlich, H Mikula, T Balber, J Singer, J Fazekas, C Rami-Mark, N Berroterán-Infante, E Jensen-Jarolim, H Viernstein, B Sohr, S Pfaff, E Halilbasic, M Visentin, B Stieger, M Trauner, P Lam, M Aistleitner, R Eichinger, C Artner, H Eidherr, C Vraka, H Kvaternik, R Müller, D Hausberger, C Zink, RM Aigner, U Cossío, M Asensio, A Montes, S Akhtar, Y te Welscher, R van Nostrum, V Gómez-Vallejo, J Llop, F VandeVyver, T Barclay, N Lippens, M Troch, L Hehenwarter, B Egger, J Holzmannhofer, M Rodrigues-Radischat, N Pötsch, D Wilhelm, M Weber, J Furtner, A Wöhrer, T Traub-Weidinger, T Cassou-Mounat, S Balogova, V Nataf, M Calzada, V Huchet, K Kerrou, J-Y Devaux, M Mohty, L Garderet, J-N Talbot, S Stanzel, G Pregartner, T Schwarz, V Bjelic-Radisic, B Liegl-Atzwanger, R Aigner, F Quehenberger, A Koljević Marković, Milica Janković, V Miler Jerković, M Paskaš, G Pupić, R Džodić, D Popović, MC Fornito, D Familiari, P Koranda, H Polzerová, I Metelková, L Henzlová, R Formánek, E Buriánková, M Kamínek, WH Thomson, C Lewis, J O’Brien, G James, A Notghi, H Huber, I Stelzmüller, R Wunn, M Mandl, F Fellner, B Lamprecht, M Gabriel, G Leonardi, J Hudzietzová, J Sabol, M Fülöp
Publikováno v:
EJNMMI Research
Table of contents A1 68Ga-PSMA PET/CT in staging and restaging of Prostate Cancer Patients: comparative study with 18F-Choline PET/CT W Langsteger, A Rezaee, W Loidl, HS Geinitz, F Fitz, M Steinmair, G Broinger, L Pallwien-Prettner, M Beheshti A2 F18
Publikováno v:
Nano Letters. 10:3204-3208
In this paper we demonstrate that under ultrahigh strain conditions p-type single crystal silicon nanowires possess an anomalous piezoresistance effect. The measurements were performed on vapor-liquid-solid (VLS) grown Si nanowires, monolithically in
Publikováno v:
Nano Letters. 9:1830-1834
In this letter, we demonstrate the simultaneous vertical integration of self-contacting and highly oriented nanowires (NWs) into airbridge structures, which have been developed into surround gated metal oxide semiconductor field effect transistors (M
Autor:
Hermann Detz, M. Steinmair, Emmerich Bertagnolli, Aaron Maxwell Andrews, Gottfried Strasser, Y. J. Hyun, Pavel Klang, Werner Schrenk, Alois Lugstein
Publikováno v:
Journal of Crystal Growth. 311:1859-1862
This paper presents a technique that allows the growth of epitaxial GaAs nanowires that are aligned to the crystal directions of the Si substrate. Low-pressure chemical vapor deposition (LP-CVD) grown Si nanowires were used as templates for molecular
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Publikováno v:
Nanotechnology. 19(48)
We report on the influence of the surface pretreatment for vapor-liquid-solid growth of epitaxial silicon nanowires with gold catalyst and silane precursor on Si(111) substrates. In this paper we make it obvious that a thin native oxide layer on the
Publikováno v:
2010 3rd International Nanoelectronics Conference (INEC).
We demonstrate the simultaneous vertical integration of self contacting and highly oriented nanowires (NWs) into airbridge structures. With the use of conventional semiconductor processing techniques and vapour-liquid-solid (VLS) growth a suspended v
Publikováno v:
Nanotechnology. 20(12)
Kinked silicon nanowires (Si-NWs) were synthesized in a well reproducible manner using gold nanocluster-catalyzed quasi-one-dimensional growth on Si(111) substrates with silane (SiH(4)) as the precursor gas. The kinking is considered to be due to the
Publikováno v:
Nano letters. 8(8)
Single crystal silicon nanowires (SiNWs) were synthesized with silane reactant using Au nanocluster-catalyzed one-dimensional growth. We have shown that under our experimental conditions, SiNWs grown epitaxially on Si(111) via the vapor−liquid−so
Autor:
Alois Lugstein, C. Zauner, Emmerich Bertagnolli, M. Steinmair, Matthias Schramböck, Y. J. Hyun, Aaron Maxwell Andrews, Werner Schrenk, Pavel Klang, Karl Unterrainer, Gottfried Strasser
Publikováno v:
Scopus-Elsevier
We present the heteroepitaxial growth of wurtzite GaAs nanowhiskers on Si(111)-nanowire trunks forming hierarchical star-like structures with a six-fold symmetry, grown in the [0001] direction perpendicular to the Si-NW {112} facets.