Zobrazeno 1 - 10
of 54
pro vyhledávání: '"M Shakra"'
Publikováno v:
Materials; Volume 15; Issue 18; Pages: 6403
A quenching technique was used to prepare the chalcogenide system of the Se60−xGe35Ga5Sbx(x = 0, 5, and 10 at. %), which was deposited as thin films onto glass substrates using a thermal evaporation technique. X-ray diffraction patterns were used f
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:14079-14091
Bulk glassy Se98Te2 and Se96Te2X2 (X = Zn and Cd) were prepared by the melting quenching method. Thin films of various thicknesses (200–670 nm) were obtained by the thermal evaporation method. The structure of the prepared compositions was investig
Publikováno v:
Indian Journal of Physics. 95:595-606
The effect of doping glassy Se98Te2 alloy with Cd and Zn impurities on the thermally crystallization behavior is investigated using differential thermal analysis (DTA) at different heating rates. In this study, the glass transition activation energy
Publikováno v:
Materials. 16:1875
The authors would like to make a correction in a recently published paper [...]
Autor:
A. M. Shakra, G.F. Salem
Publikováno v:
Optical and Quantum Electronics. 53
Se85.26Ge12.92Cd1.81 thin films were prepared using glass and fluorine tin oxide FTO substrates by the technique of thermal evaporation. Structure was performed using X-ray diffraction pattern and the energy dispersive X-ray analysis EDX. The optical
Autor:
J Inshasic, B Yamout, M Farghali, MA Sara Ahmad, R Alcharif, A Almadani, S Basu, A Boshra, AM Hassan, A Moussa, R El Ojeil, M Shakra, A Shatila, M Thakre, A Verma, T Zein
Publikováno v:
Value in Health. 25:S105
Autor:
A. M. Shakra, E.G. El-Metwally
Publikováno v:
Journal of Electronic Materials. 47:4663-4671
Bulk glassy samples of Se0.7Ge0.3 and Se0.7Ge0.25X0.05 (X = Ag, Cd or Pb) chalcogenide glass have been prepared by melt-quenching method. The studied compositions were examined in powder form by x-ray diffraction analysis. The direct-current (dc) con
Publikováno v:
Journal of Electronic Materials. 45:3332-3339
Se80Ge20−xCdx (0 ≤ x ≤ 12 at.%) compositions were prepared by a quenching technique. Thin films of the obtained compositions were deposited on dry clean glass substrates by a thermal evaporation technique. The chemical composition of the film s
Determination of allowed transitions types and the optical parameters of Se–Ge–Ag chalcogenide films
Autor:
Amira M. Shakra, E.G. El-Metwally
Publikováno v:
The European Physical Journal B. 91
Amorphous Se0.68Ge0.24Ag0.08 films were prepared by the known thermal evaporation method. X-ray diffraction (XRD) and energy dispersive X-ray (EDX) analysis were used to identify the structure of the prepared samples. Transmittance T(λ) was measured
Publikováno v:
Applied Physics A. 124
Amorphous thin films of (Sb2Se3)2(Sb2Te3)1 are prepared by the thermal evaporation of the studied composition on glass substrates. The differential thermal analysis (DTA) with four different heating rates α = 15, 20, 25 and 30 °C/min are recorded f