Zobrazeno 1 - 10
of 15
pro vyhledávání: '"M Schauler"'
Publikováno v:
Microelectronic Engineering. 46:323-326
The characteristics of Cl"2?Ar chemically-assisted ion-beam etching processes for GaN and GaAs are reported. The etch rate and anisotropy have been investigated varying ion energy, tilt angle, substrate temperature, and Cl"2 flow. Vertical and smooth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c53103957e108debde594f36ba2ccf7
https://doi.org/10.1016/s0167-9317(99)00095-7
https://doi.org/10.1016/s0167-9317(99)00095-7
Autor:
C. Kirchner, M. Boćkowski, Pawel Prystawko, Tadeusz Suski, Markus Kamp, Henryk Teisseyre, A. Śliwinski, M Schauler, J. Z. Domagala, S. Porowski, Michał Leszczyński, A Pelzmann
Publikováno v:
Journal of Crystal Growth. :1061-1065
InxGa1−xN and AlxGa1−xN layers were grown by metalorganic chemical vapour deposition (MOCVD) on highly conductive single crystals of GaN. The samples were then examined using X-ray diffraction and photoluminescence. It was found that there is a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a50cac8efcc108b59412c0d0b5db146
https://doi.org/10.1016/s0022-0248(98)01004-5
https://doi.org/10.1016/s0022-0248(98)01004-5
Autor:
T. Rotter, D. Mistele, J. Aderhold, O. Semchinova, M Schauler, M Mayer, C Ahrens, Franz Eberhard, Dirk Uffmann, H. Klausing, J. Graul, Markus Kamp, J. Stemmer
Publikováno v:
Semiconductor Science and Technology. 14:637-641
We report on the influence of different pre-etch methods on specific contact parameters of GaN contacts. For these investigations we used ex situ chemically assisted ion beam etching and in situ sputter etching before metal deposition. The electrical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45a58308feb7e92de158134a66ded5e8
https://doi.org/10.1088/0268-1242/14/7/309
https://doi.org/10.1088/0268-1242/14/7/309
Autor:
Christoph Kirchner, M Schauler, Karl Joachim Ebeling, M Mayer, P. Unger, Markus Kamp, A Pelzmann, Franz Eberhard
Publikováno v:
Journal of Crystal Growth. :782-785
Ultra-violet emitting diodes with electroluminescence linewidths as narrow as 8 nm have been grown by molecular beam epitaxy. Double-heterostructure pn- and homotype pin-diodes reveal single-peak emission at wavelengths around 371 nm. The dependence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49c01c13a768ad22444544d06055abd7
https://doi.org/10.1016/s0022-0248(98)00293-0
https://doi.org/10.1016/s0022-0248(98)00293-0
Autor:
Jürgen Christen, Karl Joachim Ebeling, V. Schwegler, Izabella Grzegory, Markus Kamp, Michał Leszczyński, Pawel Prystawko, T. Riemann, S. Porowski, C. Kirchner, Franz Eberhard, A Pelzmann, Frank Bertram, M Schauler
Publikováno v:
Applied Physics Letters. 74:1123-1125
Chemically assisted ion-beam etching (CAIBE) was used to remove subsurface damage from polished GaN bulk substrates prior to growth. Subsequently, GaN layers were deposited by metalorganic vapor phase epitaxy. Only the CAIBE-treated areas reveal a mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec7aac725362a35eddd167d995c4043e
https://doi.org/10.1063/1.123463
https://doi.org/10.1063/1.123463
Autor:
G. Stareev, Eckard Deichsel, Karl Joachim Ebeling, Wolfgang Schmid, Franz Eberhard, J. Joos, Martin Grabherr, U. Martin, Rainer Michalzik, M Schauler, Roland Jaeger, Roger King, Michael W. Miller
Publikováno v:
SPIE Proceedings.
We present a non-resonant light emitting diode with a novel concept of light outcoupling. Light is generated in the center of a radially symmetric structure and propagates between two mirrors of a tapered region where outcoupling occurs. Principles o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06eb40dcc34f10dd13a8435ecdb3cd58
https://doi.org/10.1117/12.344478
https://doi.org/10.1117/12.344478
Autor:
M Schauler, P. Unger, M Mayer, Karl Joachim Ebeling, C. Kirchner, A Pelzmann, Franz Eberhard, Markus Kamp
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 2
GaN based homo- and heterotype LED's have been fabricated and characterized which emit in the blue and ultra-violet part of the spectral range. Complete epitaxial LED layer sequences with different recombination zones have been grown using MOVPE as w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aca5349ae90164f171034100fd0627ef
https://doi.org/10.1557/s1092578300001708
https://doi.org/10.1557/s1092578300001708
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.