Zobrazeno 1 - 10
of 16
pro vyhledávání: '"M S Kovalenko"'
Autor:
D. D. Bilyi, M. S. Kovalenko
Publikováno v:
Theoretical and Applied Veterinary Medicine, Vol 11, Iss 2, Pp 21-28 (2023)
The relevance of improvement and clinical approval of modern treatment regimens is determined by the insufficient efficiency of protocols for the treatment of malignant tumors in dogs and the lack of research on the possibility of repurposing certain
Externí odkaz:
https://doaj.org/article/41c2c45d38b24362ad57d1011e580b35
Publikováno v:
Regulatory Mechanisms in Biosystems, Vol 14, Iss 2, Pp 273-277 (2023)
The aim of this study was to determine the activity of matrix metalloproteinase-2 and -9 in blood and tumour tissue of female dogs with benign and malignant mammary gland neoplasias. The increased activity of matrix metalloproteinase-2 and -9 was reg
Externí odkaz:
https://doaj.org/article/93e53b5d81f44023a979fba798759a3c
Autor:
M. S. Kovalenko, D. D. Bilyi, P. M. Skliarov, S. N. Maslikov, N. I. Suslova, T. L. Spitsyna, I. D. Yevtushenko
Publikováno v:
Regulatory Mechanisms in Biosystems, Vol 12, Iss 4, Pp 649-654 (2021)
Due to relevance of the problem, prediction of biological behaviour of neoplasias in mammary glands of dogs requires using contemporary approaches to the study, first of all, of ways of dissemination of tumour cells. One of them is studying the mecha
Externí odkaz:
https://doaj.org/article/0ed691ce4cc745929382cdf9b56888a5
Autor:
F. A. Kolokolov, N. M. Bogatov, M. S. Kovalenko, A. I. Kovalenko, L. S. Lunin, L. R. Grigorian
Publikováno v:
Semiconductors. 54:196-200
Irradiation by low-energy products leads to a variation in the electrical, optical, and other properties of the surface layer of semiconductor structures, which gives additional possibilities to modify semiconductor devices. This work is devoted to i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::644c6e77629b15e040bcd749e6fb6c04
https://doi.org/10.1134/s1063782620020062
https://doi.org/10.1134/s1063782620020062
Autor:
N. M. Bogatov, A. N. Bogatova, S. A. Sukhih, L. R. Grigoryan, M. S. Kovalenko, A. A. Nosal, D. A. Schetinin
Publikováno v:
PROCEEDINGS OF THE II INTERNATIONAL SCIENTIFIC CONFERENCE ON ADVANCES IN SCIENCE, ENGINEERING AND DIGITAL EDUCATION: (ASEDU-II 2021).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fb774738e67a28adbaa29210cc3bc9e
https://doi.org/10.1063/5.0104207
https://doi.org/10.1063/5.0104207
Pulse Response Characteristics of Silicon Photovoltaic Converters Irradiated with Low-Energy Protons
Publikováno v:
Technical Physics Letters. 47:326-328
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4004376445d3ef0f09cff6fa9f9bcb04
https://doi.org/10.1134/s1063785021040040
https://doi.org/10.1134/s1063785021040040
Publikováno v:
Ecological Bulletin of Research Centers of the Black Sea Economic Cooperation. 16:59-65
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4025d676fe083e2c20ba777e8a3bcd3
https://doi.org/10.31429/vestnik-16-1-59-65
https://doi.org/10.31429/vestnik-16-1-59-65
Autor:
L. R. Grigorian, F. A. Kolokolov, M. S. Kovalenko, Yu. A. Agafonov, A. I. Kovalenko, V. I. Zinenko, N. M. Bogatov
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 12:499-503
The irradiation of semiconductor structures with low-energy protons is used to control changes in their properties at a depth ranging from 0.1 to 1000 μm. Devices manufactured from such structures have high sensitivities to changes in the state of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7eda159a871660631fdd232f479ef7f4
https://doi.org/10.1134/s1027451018030035
https://doi.org/10.1134/s1027451018030035
Publikováno v:
Journal of Physics: Conference Series. 2094:022006
The effect of low-energy proton irradiation on the pulse characteristics of siliconn+-p-p+structures is analyzed. It is shown that irradiation with protons with an energy of 180 keV and a dose of 1015cm−2creates a region with an effective lifetime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d8409a39cf8cab422c9b1245c99302b
https://doi.org/10.1088/1742-6596/2094/2/022006
https://doi.org/10.1088/1742-6596/2094/2/022006
Publikováno v:
Journal of Physics: Conference Series. 2094:022020
The article presents the results of modeling the effect of the effective lifetime in the space charge region (SCR) of the n+-p junction on the impulse characteristics of silicon structures. The model is based on solving the fundamental system of diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0805f3c9997a3b538480d9192abfe25
https://doi.org/10.1088/1742-6596/2094/2/022020
https://doi.org/10.1088/1742-6596/2094/2/022020