Zobrazeno 1 - 10
of 21
pro vyhledávání: '"M S Dunaevsky"'
Publikováno v:
Semiconductors. 56:325-328
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f95ee6abc5460c57296c8b10b81c520d
https://doi.org/10.1134/s1063782622070028
https://doi.org/10.1134/s1063782622070028
Autor:
V. V. Ratnikov, A. N. Titkov, A G Kolmakov, M S Dunaevsky, E.E. Zavarin, N M Shmidt, V V Emtsev, A S Kryzhanovsky, A S Usikov, D S Poloskin, W V Lundin
Publikováno v:
Microscopy of Semiconducting Materials 2001 ISBN: 9781351074629
Microscopy of Semiconducting Materials 2001
Microscopy of Semiconducting Materials 2001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fe6aea37963a2445ece8d51ddf0b3fe
https://doi.org/10.1201/9781351074629-72
https://doi.org/10.1201/9781351074629-72
Autor:
A.N. Besyul'kin, M S Dunaevsky, Daniel Wolverson, A.V. Loskutov, W. V. Lundin, A. G. Kolmakov, A. V. Sakharov, N. M. Shmidt, Alexander Usikov, James Davies, E. E. Zavarin, Gazi N Aliev
Publikováno v:
physica status solidi (c). :558-562
An influence of the degree of mosaic structure domain coalescence on photoluminescence (PL) properties (yellow band PL intensity and position of the band-edge PL peak) is demonstrated. A detectable difference in electroluminescence spectra of InGaN/G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4738c1d1417a432ede3a24f70b94193
https://doi.org/10.1002/pssc.200390113
https://doi.org/10.1002/pssc.200390113
Autor:
N M Shmidt, E.E. Zavarin, A S Usikov, A V Sakharov, A.N. Besyul'kin, A G Kolmakov, M S Dunaevsky
Publikováno v:
Journal of Physics: Condensed Matter. 14:13025-13030
It is demonstrated that the degree of mosaic structure domain coalescence has an influence on both the intensity of the yellow band and the blue-shift of the basic photoluminescence peak. Detectable differences between the electroluminescence spectra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81757d6e7e1514d68f7483ba283cd6cc
https://doi.org/10.1088/0953-8984/14/48/347
https://doi.org/10.1088/0953-8984/14/48/347
Autor:
Gushchina, E. V.1 (AUTHOR) katgushch@yandex.ru, Malykh, D. A.1 (AUTHOR), Dunaevsky, M. S.1 (AUTHOR)
Publikováno v:
Semiconductors. Jun2022, Vol. 56 Issue 6, p325-328. 4p.
Autor:
Torkhov, N. A.1,2,3 (AUTHOR) trkf@mail.ru
Publikováno v:
Semiconductors. Jan2019, Vol. 53 Issue 1, p28-36. 9p.
Autor:
Torkhov, N. A., Babak, L. I., Kokolov, A. A., Salnikov, A. S., Dobush, I. M., Novikov, V. A., Ivonin, I. V.
Publikováno v:
Journal of Applied Physics; 3/7/2016, Vol. 119 Issue 9, p094505-1-094505-13, 13p, 2 Diagrams, 1 Chart, 5 Graphs
Autor:
Moiseev, K. D.1 mkd@iropt2.ioffe.rssi.ru, Parkhomenko, Ya. A.1, Gushchina, E. V.1, Ankudinov, A. V.1, Mikhailova, V. P.1, Bert, N. A.1, Yakovlev, Yu. P.1
Publikováno v:
Semiconductors. Aug2009, Vol. 43 Issue 8, p1102-1109. 8p. 3 Diagrams, 3 Charts, 7 Graphs.
Autor:
Moiseev, K. D.1 mkd@iropt2.ioffe.rssi.ru, Parkhomenko, Ya. A.1, Ankudinov, A. V.1, Gushchina, E. V.1, Mikhaǐlova, M. P.1, Titkov, A. N.1, Yakovlev, Yu. P.1
Publikováno v:
Technical Physics Letters. Apr2007, Vol. 33 Issue 4, p295-298. 4p. 2 Charts, 2 Graphs.
Autor:
Baranov, E.1, Emel'yanov, A.2, Lundin, W.2, Petrov, V.2, Sakharov, V.2, Serenkov, I.2, Sobolev, N.2 nick@sobolev.ioffe.rssi.ru, Titkov, A.2, Shek, E.2, Shmidt, N.2
Publikováno v:
Technical Physics. Dec2006, Vol. 51 Issue 12, p1600-1603. 4p. 1 Chart, 4 Graphs.