Origin of room-temperature ferromagnetism in hydrogenated epitaxial graphene on silicon carbide

Autor: Ameneh Najafi, Kees Flipse, M. Ridene

Publikováno v: Nanomaterials
Volume 9
Issue 2
Nanomaterials, 9(2):228. Multidisciplinary Digital Publishing Institute (MDPI)
Nanomaterials, Vol 9, Iss 2, p 228 (2019)

The discovery of room-temperature ferromagnetism of hydrogenated epitaxial graphene on silicon carbide challenges for a fundamental understanding of this long-range phenomenon. Carbon allotropes with their dispersive electron states at the Fermi leve

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::371397360091a5d20e2693147ce993bf
https://research.tue.nl/en/publications/9652a924-541f-4fc7-8c2b-1be0255c19ae

Porphyrin molecules boost the sensitivity of epitaxial graphene for NH

Autor: I, Iezhokin, D, den Boer, P, Offermans, M, Ridene, J A A W, Elemans, G P, Adriaans, C F J, Flipse

Publikováno v: Journal of physics. Condensed matter : an Institute of Physics journal. 29(6)

The sensitivity of quasi-free standing epitaxial graphene for NH

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::262dc6d6029a2b9390781f118153c876
https://pubmed.ncbi.nlm.nih.gov/27991424

Control of the degree of surface graphitization on 3C-SiC(100)/Si(100)

Autor: M. Ridene, Noelle Gogneau, Adrian Balan, Abdelkarim Ouerghi, Abhay Shukla

Publikováno v: Surface Science
Surface Science, Elsevier, 2012, 606 (3-4), pp.217-220. ⟨10.1016/j.susc.2011.09.021⟩
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2012, 606 (3-4), pp.217-220. ⟨10.1016/j.susc.2011.09.021⟩

International audience; The current method of growing graphene by thermal decomposition of 3C-SiC(100) on silicon substrates is technologically attractive. Here, we investigate the evolution of the surface graphitization as a function of the synthesi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a73cc9f64785294aa3334f0dc1f2909
https://doi.org/10.1016/j.susc.2011.09.021

From nanographene to monolayer graphene on 6H-SiC(0001) substrate

Autor: Abdelkarim Ouerghi, Claire Mathieu, R. Belkhou, Noelle Gogneau, M. Ridene

Publikováno v: Applied Physics Letters
Applied Physics Letters, 2013, 102 (25), ⟨10.1063/1.4812516⟩
Applied Physics Letters, American Institute of Physics, 2013, 102 (25), ⟨10.1063/1.4812516⟩

International audience; Graphene quantum dots, nanoribbons, and nanographene are great promising in various applications owing to the quantum confinement and edge effects. Here we evidence the presence of epitaxial nanographene on SiC. Morphology and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4ece6742f77c1e66d569d1b54b3efbb
https://cea.hal.science/cea-01481015

Role of silicon dangling bonds in the electronic properties of epitaxial graphene on silicon carbide

Autor: Cfj Kees Flipse, CS Calvin Kha, M. Ridene

Publikováno v: Nanotechnology, 27(12):125705, 1-6. Institute of Physics

In this paper, we study the electronic properties of epitaxial graphene (EG) on silicon carbide by means of ab initio calculations based on the local spin density approximation + U method taking into account the Coulomb interaction between Si localiz

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86963e2fee00a41ade30ef3fcf897bd9
https://doi.org/10.1088/0957-4484/27/12/125705