Zobrazeno 1 - 10
of 181
pro vyhledávání: '"M Racanelli"'
Autor:
S. Phillips, E. Preisler, J. Zheng, S. Chaudhry, M. Racanelli, M. Muller, M. Schroter, W. McArthur, D. Howard
Publikováno v:
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Publikováno v:
Microelectronics Reliability. 52:2568-2571
The radio frequency (RF) characteristics of proton irradiated large-area silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) at extreme temperatures (liquid nitrogen temperature of 77 K and high temperature of ∼430 K) are reported
Publikováno v:
2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS).
SOI processes have become the mainstream technology for wireless front end manufacturing following recent optimization of starting materials and fabrication processes. In this paper, we will describe such RFSOI platform for RF switches, the process o
Publikováno v:
Semiconductor Science and Technology. 22:S144-S148
Through 1D device simulations it has been shown that there is some advantage to engineering the shape of the collector profile in SiGe HBT's but only in certain regimes. Power law profiles are shown to be superior to a flat profile only for low break
Publikováno v:
Semiconductor Science and Technology. 22:S68-S71
In summary, thermal resistance of SiGe HBT at different power densities is characterized for the first time, revealing the decreasing trend of thermal resistance with increased dissipated power in the devices. The different behavior of thermal resist
Publikováno v:
Semiconductor Science and Technology. 22:S46-S49
The performance of SiGe HBTs has been dramatically improved due to scaling and device structure optimization. This work reports the proton radiation effects on SiGe power HBTs manufactured in a commercial BiCMOS process. Besides DC and small-signal A
Publikováno v:
ECS Transactions. 3:919-925
The effects of proton irradiation on device modeling of SiGe power HBTs are investigated in this work. On-wafer DC, small- signal AC, linearity and large-signal load-pull measurements were performed before and after proton irradiation. Minor degradat
Publikováno v:
IEEE Transactions on Nuclear Science. 53:2361-2366
The effects of proton irradiation on the RF power performance of SiGe power HBTs are, for the first time, reported in this work. Large emitter area high-power SiGe HBTs fabricated in a commercial BiCMOS process were irradiated with proton, at fluence
Autor:
J.-E. Mueller, Ralf Brederlow, H.S. Bennett, Peter E. Cottrell, J.C. Costa, M. Racanelli, W.M. Huang, A.A. Immorlica, Bin Zhao, Hisashi Shichijo, C.E. Weitzel
Publikováno v:
IEEE Transactions on Electron Devices. 52:1235-1258
The relationships between device feature size and device performance figures of merit (FoMs) are more complex for radio frequency (RF) applications than for digital applications. Using the devices in the key circuit blocks for typical RF transceivers
Autor:
P. Kempf, M. Racanelli
Publikováno v:
IEEE Transactions on Electron Devices. 52:1259-1270
SiGe BiCMOS is reviewed with focus on today's production 0.18-/spl mu/m technology at f/sub T//f/sub MAX/ of 150/200 GHz and future technology where device scaling is bringing about higher f/sub T//f/sub MAX/, as well as lower power consumption, nois