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Light-biased IV characteristics of a GaAsBi/GaAs multiple quantum well pin diode at low temperature.
Autor:
R D Richards, T B O Rockett, M R M Nawawi, F Harun, A Mellor, T Wilson, C Christou, S Chen, J P R David
Publikováno v:
Semiconductor Science & Technology; Sep2018, Vol. 33 Issue 9, p1-1, 1p
