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pro vyhledávání: '"M R Govinda"'
Autor:
M R Govinda, H V Ravish Aradhya
Publikováno v:
2021 International Conference on Recent Trends on Electronics, Information, Communication & Technology (RTEICT).
The requirement for low-power high-thickness gadgets has added to consistent MOSFET scaling. Nonetheless, assortment of troubles owing to the semiconductor size scaling, for example, SCEs and edge voltage move off concerns. FinFET is one of the optio
Publikováno v:
Journal of Sedimentary Research. 38:1344-1347
The arkosic sandstones of Badami belonging to the Lower Kaladgi formations contain detrital grains of feldspar showing authigenic overgrowths. These detrital feldspars are found to be microcline, orthoclase, and plagioclase showing good authigenic ov