Zobrazeno 1 - 10
of 34
pro vyhledávání: '"M N Pisanias"'
Autor:
M. Theodoropoulou, Christoforos A. Krontiras, V. Em. Vamvakas, Stavroula N. Georga, M. N. Pisanias
Publikováno v:
Microelectronics Reliability. 47:834-837
This work is an attempt to estimate the electrical properties of SiO 2 thin films by recording and analyzing their infrared transmission spectra. In order to study a big variety of films having different infrared and electrical properties, we studied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e93e4af8fb39e02bab7a5d6ab0c0b29
https://doi.org/10.1016/j.microrel.2007.01.072
https://doi.org/10.1016/j.microrel.2007.01.072
Autor:
Stavroula N. Georga, P. K. Karahaliou, Georgios C. Psarras, M. N. Pisanias, G. Kontos, A. Soulintzis, Christoforos A. Krontiras
Publikováno v:
Express Polymer Letters. 1:781-789
Polymer matrix-TiO2 composites were prepared in three different filler concentrations. The electrical relaxation dynamics as well as the electrical conductivity of all samples were examined by means of Broadband Dielectric Spec- troscopy (BDS) over a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::053a65dab74ad6756b43a1c2dc7fce56
https://doi.org/10.3144/expresspolymlett.2007.108
https://doi.org/10.3144/expresspolymlett.2007.108
Autor:
M N Pisanias, Nikos Konofaos, Christoforos A. Krontiras, Zhongchun Wang, Stavroula N. Georga, Evangelos Evangelou, J. Sotiropoulos
Publikováno v:
Journal of Electronic Materials. 34:1259-1263
Highly uniform BaTiO3 (BTO) films with thickness well below 100 nm were deposited on p-Si by spin coating using a modified polymeric precursor method. The polymeric precursor gel was redissolved into glacial acetic acid to improve the wetting propert
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99f68c845afc2c5d48ee7641ad010104
https://doi.org/10.1007/s11664-005-0272-5
https://doi.org/10.1007/s11664-005-0272-5
Autor:
Christoforos A. Krontiras, Androula G. Nassiopoulou, M. Theodoropoulou, M. Kokonou, Stavroula N. Georga, M. N. Pisanias, P. K. Karahaliou
Publikováno v:
Ionics. 11:236-239
The electrical properties of thin porous alumina films in the form of MOS structures were studied with dielectric spectroscopy at room temperature. The thickness of the samples was found to be approximately 95 nm with a cross section area of 1.6×10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3c7b39fd41226e305481883c4142071
https://doi.org/10.1007/bf02430382
https://doi.org/10.1007/bf02430382
Autor:
Stavroula N. Georga, Androula G. Nassiopoulou, Christoforos A. Krontiras, M N Pisanias, P. K. Karahaliou, M. Theodoropoulou, M. Kokonou
Publikováno v:
Journal of Physics: Conference Series. 10:222-225
Impedance Spectroscopy was employed in order to investigate the electrical properties of thin porous anodic alumina films on Si, of thicknesses in the range of 50-200 nm, fabricated by anodization in sulfuric acid. C–V and G–V measurements were p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2fcb3019c174be31d448b04251bd75a
https://doi.org/10.1088/1742-6596/10/1/055
https://doi.org/10.1088/1742-6596/10/1/055
Autor:
Th K Voilas, M N Pisanias, J. Sotiropoulos, Christoforos A. Krontiras, Nikos Konofaos, Evangelos Evangelou, Zhongchun Wang, Stavroula N. Georga
Publikováno v:
Journal of Physics: Conference Series. 10:49-52
The electrical properties of MOS devices with high-k insulating BaTiO3 sol gel films fabricated onto p-Si substrates, were investigated by a variety of electrical techniques. The aim was to identify the temperature dependence of the electrical proper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ac06a41dab889bcf2d747cc8c9dcbb6
https://doi.org/10.1088/1742-6596/10/1/013
https://doi.org/10.1088/1742-6596/10/1/013
Autor:
Stavroula N. Georga, N. Xanthopoulos, M N Pisanias, Christoforos A. Krontiras, Androula G. Nassiopoulou, M. Theodoropoulou, Christos Tsamis, P. K. Karahaliou
Publikováno v:
Journal of Applied Physics. 96:7637-7642
Dielectric impedance measurements as well as transient current–voltage (I–V) characteristics under conditions of forward and reverse bias are reported in aluminum/porous silicon (PS)∕p-cSi structures at different temperatures. Under reverse bia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c032771c78299eb73de6184be327e923
https://doi.org/10.1063/1.1815388
https://doi.org/10.1063/1.1815388
Autor:
Christoforos A. Krontiras, P. K. Karahaliou, M. Kokonou, Androula G. Nassiopoulou, A. Travlos, Stavroula N. Georga, M. Theodoropoulou, M N Pisanias, N. Xanthopoulos
Publikováno v:
Journal of Applied Physics. 95:2776-2780
Structural characterization and surface topography of porous alumina thin films on silicon with embedded silicon nanocrystals were performed using scanning and transmission electron microscopy. The nature of porous alumina thin films is nanocrystalli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4972bb8804efe01eb29d23432f19789
https://doi.org/10.1063/1.1645640
https://doi.org/10.1063/1.1645640
Autor:
M. Theodoropoulou, Androula G. Nassiopoulou, M. N. Pisanias, Stavroula N. Georga, Christos Tsamis, N. Xanthopoulos, Christoforos A. Krontiras
Publikováno v:
Materials Science and Engineering: B. 101:334-337
In order to investigate the prevailing conduction mechanisms of porous silicon (PS) thin films AC impedance spectroscopy measurements, as well as transient current measurements, as a function of voltage, were performed in the temperature range from 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11b6864e68fda8db98e9086069e99618
https://doi.org/10.1016/s0921-5107(02)00753-5
https://doi.org/10.1016/s0921-5107(02)00753-5
Autor:
M. Theodoropoulou, Christos Tsamis, Christoforos A. Krontiras, Androula G. Nassiopoulou, M. N. Pisanias, Stavroula N. Georga, N. Xanthopoulos
Publikováno v:
physica status solidi (a). 197:279-283
AC impendance spectroscopy measurements as a function of the applied voltage in the range 0.5 V up to 3 V, as well as measurements of the transient current of porous silicon thin films as function of the applied voltage in the range 1V up to 9 V were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e84a0dab3bbc35db44029ac702b2be3
https://doi.org/10.1002/pssa.200306481
https://doi.org/10.1002/pssa.200306481