Zobrazeno 1 - 10
of 20
pro vyhledávání: '"M Murat Bozkurt"'
Publikováno v:
Journal of Physics : Condensed Matter, 28(28):284002, 1-7. Institute of Physics
An atomic scale study has been performed to understand the influence of the (As,Sb) shutter sequences during interface formation on the optical properties of InGaAs/AlAsSb quantum wells. Our cross-sectional scanning tunneling microscopy results show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0984de4169382424eaff1c26928a3c5d
https://research.tue.nl/en/publications/d594c2ef-ed34-4c5e-8c44-f00b6501897f
https://research.tue.nl/en/publications/d594c2ef-ed34-4c5e-8c44-f00b6501897f
Autor:
van Hcm Eric Genuchten, J.H. Blokland, PM Paul Koenraad, J. T. Devreese, Daniel Granados, Jan C. Maan, M Murat Bozkurt, Vladimir M. Fomin, V. N. Gladilin, Najm Niek Kleemans, Pcm Christianen, Alfonso G. Taboada, Jorge M. Garcia
Publikováno v:
Physical Review B, 80(15):155318, 155318-1/4. American Physical Society
Physical Review. B, Condensed Matter and Materials Physics, 80, 1-4
Physical Review. B, Condensed Matter and Materials Physics, 80, 15, pp. 1-4
Physical review : B : solid state
Digital.CSIC. Repositorio Institucional del CSIC
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Physical Review. B, Condensed Matter and Materials Physics, 80, 1-4
Physical Review. B, Condensed Matter and Materials Physics, 80, 15, pp. 1-4
Physical review : B : solid state
Digital.CSIC. Repositorio Institucional del CSIC
instname
We investigate the exciton energy level structure of a large ensemble of InAs/GaAs quantum rings by photoluminescence spectroscopy in magnetic fields up to 30 T for different excitation densities. The confinement of an electron and a hole in these ty
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e42c39b4ba47f8b4b820b0f259bcedf1
https://doi.org/10.1103/PhysRevB.80.155318
https://doi.org/10.1103/PhysRevB.80.155318
Autor:
V. Haxha, Max A. Migliorato, PM Paul Koenraad, I. Drouzas, JM José Maria Ulloa, M Murat Bozkurt, Matthew J. Steer, Huiyun Liu, Mark Hopkinson, D. J. Mowbray
Publikováno v:
Physical Review B, 80(16):165334, 165334-1/12. American Physical Society
We report a combined experimental and theoretical analysis of Sb and In segregation during the epitaxial growth of InAs self-assembled quantum dot structures covered with a GaSbAs strain-reducing capping layer. Cross-sectional scanning tunneling micr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65faeb1b9063fd7738c60a0b38711591
https://doi.org/10.1103/PhysRevB.80.165334
https://doi.org/10.1103/PhysRevB.80.165334
Publikováno v:
Solid State Communications, 149(35-36), 1410-1418. Elsevier
Cross-sectional Scanning Tunneling Microscopy (X-STM) is an ideal tool to study the structural properties of semiconductor nanostructures, such as InAs self-assembled quantum dots (QDs) and the properties of individual doping atoms at the atomic scal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c114aa3d6b4976d3e3f4b5ce6ec19fa9
https://research.tue.nl/en/publications/e2a107bb-9953-4b6f-9646-5faa1a507cd4
https://research.tue.nl/en/publications/e2a107bb-9953-4b6f-9646-5faa1a507cd4
Autor:
PM Paul Koenraad, V. N. Gladilin, J. T. Devreese, Vladimir M. Fomin, Najm Niek Kleemans, M Murat Bozkurt
Publikováno v:
physica status solidi (b). 245:2657-2661
Theoretical analysis of the electron energy spectrum and the magnetization of an electron in a strained Inx Ga1–xAs/GaAs self-assembled quantum ring (SAQR) is performed with realistic parameters, determined from the cross-sectional scanning-tunneli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f846373abf8103afd628f4d877db3e50
https://doi.org/10.1002/pssb.200879817
https://doi.org/10.1002/pssb.200879817
Autor:
PM Paul Koenraad, Michael E. Flatté, Mohammad Reza Mahani, Steven R. Schofield, Jian-Ming Tang, A. Yu. Silov, Cyrus F. Hirjibehedin, Neil J. Curson, Carlo M. Canali, Philipp Studer, M Murat Bozkurt
Publikováno v:
Physical Review B, 88(20):205203, 205203-1/11. American Physical Society
We investigate the effect of an external magnetic field on the physical properties of the acceptor hole states associated with single Mn acceptors placed near the (110) surface of GaAs. Crosssectional scanning tunneling microscopy images of the accep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82890089a685afa4f707d254340567f6
Autor:
José M. Llorens, Adrian Hierro, M Murat Bozkurt, JM José Maria Ulloa, PM Paul Koenraad, del M Moral
Publikováno v:
Journal of Applied Physics, 112(7):074311, 074311-1/9. American Institute of Physics
Digital.CSIC. Repositorio Institucional del CSIC
instname
Digital.CSIC. Repositorio Institucional del CSIC
instname
The origin of the modified optical properties of InAs/GaAs quantum dots (QD) capped with a thin GaAs 1-xSb x layer is analyzed in terms of the band structure. To do so, the size, shape, and composition of the QDs and capping layer are determined thro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fae3977db8b4ab776530428645069516
http://hdl.handle.net/10261/117959
http://hdl.handle.net/10261/117959
Autor:
M Murat Bozkurt, R. P. Campion, A. D. Giddings, PM Paul Koenraad, B. L. Gallagher, S. J. C. Mauger
Publikováno v:
Physical Review B-Condensed Matter and Materials Physics, 84(10):104432. American Physical Society
(Ga1-x,Mnx)As/GaAs and (Ga1-x,Mn x)As/(Al0.2,Ga0.8)As multilayer structures grown by molecular beam epitaxy have been studied by cross-sectional scanning tunneling microscopy. These dilute magnetic semiconductor multilayer structures have been predic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9b7e17b682aa99d2d9177440fd49143
https://doi.org/10.1103/physrevb.84.104432
https://doi.org/10.1103/physrevb.84.104432
Autor:
Nicolas Bertru, Takaaki Mano, Wei Lu, Kazuaki Sakoda, Tony Rohel, Takeshi Noda, JG Joris Keizer, Gerhard Abstreiter, Hervé Folliot, M Murat Bozkurt, Martin Bichler, Jonathan J. Finley, PM Paul Koenraad, Juanita Bocquel, E. C. Clark
Publikováno v:
Journal of the Korean Physical Society, 58(5), 1244-1250. Korean Physical Society
In this cross-sectional scanning tunneling microscopy study we investigated various techniques to control the shape of self-assembled quantum dots (QDs) and wetting layers (WLs). The result shows that application of an indium flush during the growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fec77e45de7bd9b79f87426c9db0c5ee
https://research.tue.nl/nl/publications/baaea373-1e43-471f-8411-35d64a85e8cb
https://research.tue.nl/nl/publications/baaea373-1e43-471f-8411-35d64a85e8cb
Shape and size control of InAs/InP (113)B quantum dots by Sb deposition during the capping procedure
Autor:
Wei Lu, Hervé Folliot, Tony Rohel, JG Joris Keizer, M Murat Bozkurt, PM Paul Koenraad, Nicolas Bertru
Publikováno v:
Nanotechnology, 22(5):055703, 055703-1/4. Institute of Physics
Nanotechnology
Nanotechnology, Institute of Physics, 2011, 22, pp.055703. ⟨10.1088/0957-4484/22/5/055703⟩
Nanotechnology, 2011, 22, pp.055703. ⟨10.1088/0957-4484/22/5/055703⟩
Nanotechnology
Nanotechnology, Institute of Physics, 2011, 22, pp.055703. ⟨10.1088/0957-4484/22/5/055703⟩
Nanotechnology, 2011, 22, pp.055703. ⟨10.1088/0957-4484/22/5/055703⟩
The role of Sb atoms present on the growth front during capping of InAs/InP (113)B quantum dots (QDs) is investigated by cross-sectional scanning tunnelling microscopy, atomic force microscopy, and photoluminescence spectroscopy. Direct capping of In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b77aeea5576c8bdf85fd5c7480fbd9fd
https://research.tue.nl/nl/publications/82fc84a3-3e83-47df-b1e4-886d30c7e289
https://research.tue.nl/nl/publications/82fc84a3-3e83-47df-b1e4-886d30c7e289