Zobrazeno 1 - 10
of 59
pro vyhledávání: '"M M Sobolev"'
Autor:
M. M. Sobolev, F. Yu. Soldatenkov
Publikováno v:
Semiconductors. 56:107-114
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92121376acb9b3a5bf75931890c31796
https://doi.org/10.1134/s1063782622010158
https://doi.org/10.1134/s1063782622010158
Autor:
F. Y. Soldatenkov, M. M. Sobolev
Publikováno v:
Semiconductors. 54:1260-1266
The temperature dependences of the capacitance-voltage (C–V) characteristics and deep-level spectra of a graded high-voltage AlxGa1 – xAs p0–i–n0 junction grown by liquid-phase epitaxy via autodoping with background impurities are studied. Ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dde86b6e684a91e6c13fceffee49bf0
https://doi.org/10.1134/s1063782620100280
https://doi.org/10.1134/s1063782620100280
Publikováno v:
Semiconductors. 53:1393-1397
The temperature dependences of the capacitance–voltage characteristics and deep-level spectra of a Au–n-Si:Au–Si–p-Si heterostructure based on a composite layer of Au and Si nanoparticles are investigated. The structure manifests the properti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d480c1bae00d02389fe2d3741092cc72
https://doi.org/10.1134/s1063782619100208
https://doi.org/10.1134/s1063782619100208
Publikováno v:
Journal of Physics: Conference Series. 2227:012019
The high-voltage p+–p0–i–n0–n+ structures based on epitaxial gradual GaAs p0–i–n0 junction grown in hydrogen or argon atmosphere have been studied by capacitance-voltage spectroscopy and deep-level transient spectroscopy, DLTS, before and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dadf79ccf12867c5f6954d16acbfd0d8
https://doi.org/10.1088/1742-6596/2227/1/012019
https://doi.org/10.1088/1742-6596/2227/1/012019
Publikováno v:
Technical Physics Letters. 44:287-290
C–V characteristics and DLTS spectra of heterostructures made up of layers of closely packed amorphous Si nanoparticles deposited by laser electrodispersion onto single-crystal p-Si substrates have been examined. The patterns observed in the behavi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5c87c85cb19dc69aab312d344c3447c
https://doi.org/10.1134/s1063785018040107
https://doi.org/10.1134/s1063785018040107
Autor:
M. M. Sobolev, F. Yu. Soldatenkov
Publikováno v:
Semiconductors. 52:165-171
The results of an experimental study of the capacitance–voltage (C–V) characteristics and deep-level transient spectroscopy (DLTS) spectra of p+–p0–i–n0 homostructures based on undoped dislocationfree GaAs layers and InGaAs/GaAs and GaAsSb/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f4f1cca389ad3ad3d5b80c011d8ac70
https://doi.org/10.1134/s1063782618020173
https://doi.org/10.1134/s1063782618020173
Publikováno v:
Semiconductors. 50:924-928
An experimental study of the capacitance–voltage (C–V) characteristics and deep-level transient spectroscopy (DLTS) of p+–p0–i–n0 structures based on undoped GaAs, grown by liquid-phase epitaxy at two crystallization-onset temperatures To (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::191327750bbb94fef6a48889cd1db8c3
https://doi.org/10.1134/s1063782616070241
https://doi.org/10.1134/s1063782616070241
Publikováno v:
Journal of Applied Physics. 128:095705
The variation of the effective lifetime of minority carrier lifetime τeff with temperature has been studied in the temperature range 300–580 K in AlxGa1−xAs base regions of p+–p0–i–n0–n+ high-voltage GaAs–AlGaAs diodes grown by liquid-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3f1ce22cf3324e659ee41bfcfa03420
https://doi.org/10.1063/5.0018317
https://doi.org/10.1063/5.0018317
Autor:
M. M. Sobolev, V. N. Nevedomskiy, M. S. Buyalo, E. L. Portnoi, A. P. Vasil’ev, R. V. Zolotareva, V. M. Ustinov, Yu. M. Zadiranov
Publikováno v:
Semiconductors. 49:1335-1340
The spectral characteristics of a laser with an active region based on a ten-layer system of In(Ga)As/GaAs vertically correlated quantum dots with 4.5-nm GaAs spacer layers between InAs quantum dots are studied under the conditions of spontaneous and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19ac9adc176c61dacdf774decdfc8969
https://doi.org/10.1134/s1063782615100243
https://doi.org/10.1134/s1063782615100243
Autor:
V. N. Nevedomskiy, A. P. Vasil’ev, I. M. Gadzhiyev, R. V. Zolotareva, M. S. Buyalo, M. M. Sobolev, Yu. M. Zadiranov, V. M. Ustinov
Publikováno v:
Semiconductors. 48:1031-1035
The polarization anisotropy of electroluminescence and absorption in a ten-layer system of vertically correlated InAs quantum dots separated by 8.6-nm-thick GaAs spacer layers is investigated experimentally. The quantum-dot system is built into a two
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87f667ef02d9c95f82dd6b32bcbbce34
https://doi.org/10.1134/s1063782614080235
https://doi.org/10.1134/s1063782614080235