Zobrazeno 1 - 10
of 34
pro vyhledávání: '"M M Eremenko"'
Publikováno v:
Nanomaterials
Volume 11
Issue 5
Nanomaterials, Vol 11, Iss 1184, p 1184 (2021)
Volume 11
Issue 5
Nanomaterials, Vol 11, Iss 1184, p 1184 (2021)
Modern and future nanoelectronic and nanophotonic applications require precise control of the size, shape and density of III-V quantum dots in order to predefine the characteristics of devices based on them. In this paper, we propose a new approach t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5637a81bccfead649e5a368bd14c0d23
http://europepmc.org/articles/PMC8146642
http://europepmc.org/articles/PMC8146642
Autor:
S. V. Balakirev, Oleg A. Ageev, Natalia E. Chernenko, M. S. Solodovnik, M. M. Eremenko, N. A. Shandyba, Danil V. Kirichenko
Publikováno v:
Applied Surface Science. 578:152023
In order to consider quantum dots as single objects and to use them in modern electronic and photonic devices, they must be well-isolated from each other and have an appropriate size and structural quality. This is a big challenge that is difficult t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd83bb5411c4966712e3f3e591a0e0f8
https://doi.org/10.1016/j.apsusc.2021.152023
https://doi.org/10.1016/j.apsusc.2021.152023
Autor:
N A Shandyba, N E Chernenko, J Y Zhityaeva, O I Osotova, M M Eremenko, S V Balakirev, M S Solodovnik
Publikováno v:
Journal of Physics: Conference Series. 2086:012036
We present the results of studies of the effect of wet chemical treatment on the properties of a GaAs surface modified by a gallium focused ion beam. Our studies based on results of AFM, KpAFM and Raman spectroscopy measurements have shown that, duri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59584be044e7f7b39da4f5a3b6d7dfdf
https://doi.org/10.1088/1742-6596/2086/1/012036
https://doi.org/10.1088/1742-6596/2086/1/012036
Publikováno v:
Journal of Physics: Conference Series. 2086:012007
In this work, we studied the effect of the deposition thickness, growth rate, arsenic flux, and implantation dose on the morphology of the GaAs nanostructures grown on modified Si areas. It is shown that an increase in the growth rate at the initial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09fc948e6a3456a81afe07fbea71bff8
https://doi.org/10.1088/1742-6596/2086/1/012007
https://doi.org/10.1088/1742-6596/2086/1/012007
Publikováno v:
Journal of Physics: Conference Series. 2086:012017
In this paper, we present the results of an experimental study of the influence of the ultra-low arsenic flux on the parameters of In nanodroplets obtained by droplet epitaxy on the GaAs substrate. We demonstrate that the arsenic flux can be used to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35facccbedcc25780a5f00d089e0a8d2
https://doi.org/10.1088/1742-6596/2086/1/012017
https://doi.org/10.1088/1742-6596/2086/1/012017
Publikováno v:
Journal of Physics: Conference Series. 2086:012005
In this paper, we present the results of kinetic Monte Carlo study of the In/GaAs growth by droplet epitaxy in conditions of non-stationary vapor supersaturation. These conditions allow achievement of the independent control of size and surface densi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f88ae43fdb9b8cbc7e62e23deb9098d2
https://doi.org/10.1088/1742-6596/2086/1/012005
https://doi.org/10.1088/1742-6596/2086/1/012005
Autor:
M M Eremenko, N A Shandyba, N E Chernenko, S V Balakirev, L S Nikitina, M S Solodovnik, O A Ageev
Publikováno v:
Journal of Physics: Conference Series. 2086:012027
In this work, we studied the effect of annealing the silicon surface on the morphology of focused ion beam modified areas. It was found that an increase in the ion beam accelerating voltage during surface treatment significantly affects the morpholog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55039b280e3de958fda18471f7dde41f
https://doi.org/10.1088/1742-6596/2086/1/012027
https://doi.org/10.1088/1742-6596/2086/1/012027
Publikováno v:
Journal of Physics: Conference Series. 2086:012003
In this work, experimental studies of the influence of the arsenic molecular form (di-or tetramers) and substrate temperature on the crystallization of In/GaAs droplet nanostructures during droplet epitaxy have been carried out. We have shown the cri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f6ff90d4f05aecf4a0b97f767f29555
https://doi.org/10.1088/1742-6596/2086/1/012003
https://doi.org/10.1088/1742-6596/2086/1/012003
Publikováno v:
Nanotechnology. 30(50)
Fabrication of AIIIBV nanostructures by droplet epitaxy has many advantages over other epitaxial techniques. Although various characteristics of the growth by droplet epitaxy have been thoroughly studied for both lattice-matched and mismatched system
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72c9d12f0aa3c3f806d814f1089e71f1
https://pubmed.ncbi.nlm.nih.gov/31480037
https://pubmed.ncbi.nlm.nih.gov/31480037
Publikováno v:
Journal of Crystal Growth. 457:46-51
The molecular beam epitaxial growth of GaAs on the GaAs(001)-(2×4) surface is investigated using a kinetic Monte Carlo-based method. The developed algorithm permits to focus on the kinetic effects in a wide range of growth conditions and enables con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ba4012c626bd9efeb1a4a21a17301ca
https://doi.org/10.1016/j.jcrysgro.2016.05.039
https://doi.org/10.1016/j.jcrysgro.2016.05.039