Zobrazeno 1 - 10
of 85
pro vyhledávání: '"M Kleverman"'
Publikováno v:
Semiconductor Science and Technology. 14:1076-1079
Two optical bands due to short-time diffusion of Se in Si have been studied by a photoluminescence technique. The bands show similarities to the two Se-related bands reported previously but have shifted in energy. The Se-related bands reported here a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b13e0f923af3f0c0c1d53f1cb09c5e03
https://doi.org/10.1088/0268-1242/14/12/311
https://doi.org/10.1088/0268-1242/14/12/311
Publikováno v:
Applied Physics A Solids and Surfaces. 53:43-46
High-resolution studies of a deep impurity in Si/Ge alloys are presented. It is shown that gold forms at least two different centers, a single substitutional defect and a gold pair. The energy structure and internal transitions of these defects were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e6f65432b7340c319b3baac26181498
https://doi.org/10.1007/bf00323433
https://doi.org/10.1007/bf00323433
Autor:
M. Kleverman, Hermann G. Grimmeiss
Publikováno v:
Applied Surface Science. 50:52-62
Some aspects of recent developments in defect characterization of II–VI, III–V and IV–IV compounds are reviewed. It is shown that in addition to junction space charge techniques high-resolution spectroscopy measurements have provided complement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cabefc0313988a48e0787d80e0ec42bd
https://doi.org/10.1016/0169-4332(91)90138-a
https://doi.org/10.1016/0169-4332(91)90138-a
Publikováno v:
Physical Review B. 73
The effective-mass theory is applied for description of the electronic states of shallow donors in indirect band-gap uniaxial crystals, which have three different components of the electron effective-mass tensor, and two different components of the t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::517b28c74accb56eda7e41535732368e
https://doi.org/10.1103/physrevb.73.045205
https://doi.org/10.1103/physrevb.73.045205
Autor:
M. Kleverman, H.G. Grimmeiss
Publikováno v:
Journal of Physics and Chemistry of Solids. 49:615-626
Taking sulfur-doped silicon as an example it is shown that the local Auger effect is one of those rare effects which can be used to identify two energy levels as different charge states of the same center. While the coupling of two particular energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1eac019ec5ef19cc9d95d605c0f25a2
https://doi.org/10.1016/0022-3697(88)90192-8
https://doi.org/10.1016/0022-3697(88)90192-8
Publikováno v:
Semiconductor Science and Technology. 1:49-52
Photoconductivity spectra of the interstitial Mg double donor have been studied. A strong Fano resonance structure has been observed for the singly ionised centre and its assignment is discussed in detail. Their results show that the electron-phonon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::353eca0babbdefadf455e09f0d87a199
https://doi.org/10.1088/0268-1242/1/1/006
https://doi.org/10.1088/0268-1242/1/1/006
Autor:
M Kleverman, H G Grimmeiss
Publikováno v:
Semiconductor Science and Technology. 1:45-48
The P3/2 line spectra of three Be-related acceptor centres have been studied. The binding energies of these centres (Be I, Be III and Be IV) have been determined to be about 192200 and 93 meV, respectively. Although the ground state is much deeper th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8e77120dbdc04dd7be6e570e6d380af
https://doi.org/10.1088/0268-1242/1/1/005
https://doi.org/10.1088/0268-1242/1/1/005
Publikováno v:
MRS Proceedings. 163
Cu diffused GaAs samples have been investigated using different kinds of FΠR techniques and photoluminescence. The results suggest that tne “0.15 eV” level originates from the ioruzation of a neutral, nearly substitutional Cu acceptor at a Ga si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8e974cea621cb9ffef928d6c58765e5
https://doi.org/10.1557/proc-163-169
https://doi.org/10.1557/proc-163-169
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