Zobrazeno 1 - 5
of 5
pro vyhledávání: '"M J Uren"'
Autor:
D. H. Cobden, M. J. Uren
Publikováno v:
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 ISBN: 9781489915900
Submicron silicon MOS structures frequently show discrete two-level fluctuations in their conductivity associated with the change in occupancy of a single SiO2 defect. This article will review the progress that has been made in understanding the comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2b557b0d0bfa0dd3a253cf5108e8781
https://doi.org/10.1007/978-1-4899-1588-7_41
https://doi.org/10.1007/978-1-4899-1588-7_41
Autor:
K V Vassilevski, N G Wright, I P Nikitina, A B Horsfall, A G O'Neill, M J Uren, K P Hilton, A G Masterton, A J Hydes and C M Johnson
Publikováno v:
Semiconductor Science & Technology; Mar2005, Vol. 20 Issue 3, p271-278, 8p
Autor:
M. J. Uren
Publikováno v:
Applied Physics Letters. 63:1443-1443
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::482e1822306583dc0030130db52a214b
https://doi.org/10.1063/1.109651
https://doi.org/10.1063/1.109651
Autor:
M J Kirton, M J Uren
Publikováno v:
Advances in Physics. 38:367-468
In very small electronic devices the alternate capture and emission of carriers at an individual defect site generates discrete switching in the device resistance—referred to as a random telegraph signal (RTS). The study of RTSs has provided a powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ebf9d1d5d904a60c2a53b3aff420784
https://doi.org/10.1080/00018738900101122
https://doi.org/10.1080/00018738900101122
Autor:
M. J. Uren, M. J. Kirton
Publikováno v:
Applied Physics Letters. 48:1270-1272
By studying the random telegraph signals in the drain current of small area metal‐oxide‐semiconductor field‐effect transistors as a function of temperature, we show that carrier capture into individual interface states takes place via a multiph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d326a67b52dfbfad5d0fb6d726960a37
https://doi.org/10.1063/1.97000
https://doi.org/10.1063/1.97000