Zobrazeno 1 - 10
of 15
pro vyhledávání: '"M J Rozenberg"'
Autor:
Ivan K. Schuller, Pavel Salev, L. Fratino, Coline Adda, Javier del Valle, Pavel N. Lapa, Paul Y. Wang, Rodolfo Rocco, Min-Han Lee, Nicolás Vargas, M. J. Rozenberg, Yoav Kalcheim
Publikováno v:
Science (New York, N.Y.). 373(6557)
Many correlated systems feature an insulator-to-metal transition that can be triggered by an electric field. Although it is known that metallization takes place through filament formation, the details of how this process initiates and evolves remain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34ab4255731ac73c5848c2a737b907c4
https://pubmed.ncbi.nlm.nih.gov/34413224
https://pubmed.ncbi.nlm.nih.gov/34413224
Autor:
Alberto Camjayi, Dafiné Ravelosona, Julie A. Borchers, Dustin A. Gilbert, Yoav Kalcheim, Juan Trastoy, Jean-Paul Crocombette, M. J. Rozenberg, Ivan K. Schuller, J. del Valle, Javier E. Villegas
Publikováno v:
Physical Review B. 101
Despite decades of efforts, the origin of metal-insulator transitions (MITs) in strongly correlated materials remains one of the main long-standing problems in condensed-matter physics. An archetypal example is ${\mathrm{V}}_{2}{\mathrm{O}}_{3}$, whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4e89337ebdc59d8f3bebb2075a15dfc
https://doi.org/10.1103/physrevb.101.245109
https://doi.org/10.1103/physrevb.101.245109
Publikováno v:
Journal of Physics Communications. 6:021001
A VLSI implementation of a Silicon-Controlled Rectifier (SCR)-based Neuron that has the functionality of the leaky-integrate and fire model (LIF) of spiking neurons is introduced. The silicon-controlled rectifier is not straightforward to efficiently
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce7fb5eab2b0b56a338be9ce22b39525
https://doi.org/10.1088/2399-6528/ac4e2a
https://doi.org/10.1088/2399-6528/ac4e2a
Publikováno v:
Spintronics X.
Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 5 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a compet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0ab070ba936645d8f2258856a1f2022
https://doi.org/10.1117/12.2277977
https://doi.org/10.1117/12.2277977
We consider the dimer Hubbard model within Dynamical Mean Field Theory to study the interplay and competition between Mott and Peierls physics. We describe the various metal-insulator transition lines of the phase diagram and the break down of the di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3180ed3847ec8ddcff0e5323c05ea751
Autor:
M. J. Rozenberg, D. R. Grempel
Publikováno v:
Physical Review Letters. 81:2550-2553
We use quantum Monte Carlo methods and various analytic approximations to study the infinite-range Ising spin-glass model in a transverse field in the disordered phase. We focus on the behavior of the frequency dependent susceptibility of the system
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8783d47758e2d9f0a7b94b6979560885
https://doi.org/10.1103/physrevlett.81.2550
https://doi.org/10.1103/physrevlett.81.2550
Autor:
M. J. Rozenberg, D. R. Grempel
Publikováno v:
Physical Review Letters. 80:389-392
We solve the $S\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}1/2$ infinite-range random Heisenberg Hamiltonian in the paramagnetic phase using quantum Monte Carlo and analytical techniques. We find that the spin-glass susceptibility diverges at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ea63235fdc1f3b68219b071d794a24e
https://doi.org/10.1103/physrevlett.80.389
https://doi.org/10.1103/physrevlett.80.389
Publikováno v:
Physical review letters. 113(8)
The nature of the Mott transition in the absence of any symmetry breaking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa(4)Se(8), as a function of temperature and appl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::3a35865e9863eb68b5dd1d6d22f19d5b
https://pubmed.ncbi.nlm.nih.gov/25192113
https://pubmed.ncbi.nlm.nih.gov/25192113
Autor:
M. J. Rozenberg, María José Sánchez, F.G. Marlasca, Diego Rubi, N. Ghenzi, P. Stoliar, P. Levy
Publikováno v:
J Appl Phys 2012;111(8)
Biblioteca Digital (UBA-FCEN)
Universidad Nacional de Buenos Aires. Facultad de Ciencias Exactas y Naturales
instacron:UBA-FCEN
Biblioteca Digital (UBA-FCEN)
Universidad Nacional de Buenos Aires. Facultad de Ciencias Exactas y Naturales
instacron:UBA-FCEN
We explore different resistance states of La 0.325Pr 0.300 Ca 0.375 MnO 3- Ti interfaces as prototypes of non-volatile memory devices at room temperature. In addition to high and low resistance states accessible through bipolar pulsing with one pulse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e58a2d701f557821515ee69910dc782
Autor:
R. Chitra, M. J. Rozenberg
Publikováno v:
Physical Review B. 78
The recent NMR experiments on ZnCu3(OH)6Cl2 motivate our study of the effect of non- magnetic defects on the antiferromagnetic spin-1/2 kagome lattice. We use exact diagonalization methods to study the effect of two such defects on finite size system
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a924b33a2345a38c36af659671074f41
https://doi.org/10.1103/physrevb.78.132406
https://doi.org/10.1103/physrevb.78.132406