Zobrazeno 1 - 10
of 16
pro vyhledávání: '"M G Cheong"'
Publikováno v:
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ceac405b4c1ceb443386c911371fcd8
https://doi.org/10.1201/9781351074636-149
https://doi.org/10.1201/9781351074636-149
Publikováno v:
physica status solidi (b). 241:2759-2762
InGaN/GaN quantum well light emitting diodes (LEDs) were grown with p-GaN layers of varied Mg impurity content. As the concentration of Mg impurity increases, the hole concentration increases up to a critical Mg impurity density and then decreases wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d06090acf25f5d998f9cd1e27383ab06
https://doi.org/10.1002/pssb.200405115
https://doi.org/10.1002/pssb.200405115
Publikováno v:
Journal of Applied Physics. 93:4691-4695
We report the emission properties of various InGaN/GaN quantum wells. The photoluminescence of InxGa1−xN/GaN (x>20%) quantum wells under varying external bias voltages has been investigated. A redshift of the photoluminescence peak position and dec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ea77da9a623478c072c85cb14c46266
https://doi.org/10.1063/1.1562735
https://doi.org/10.1063/1.1562735
Autor:
R. J. Choi, M. G. Cheong, S. W. Yu, Eun-Kyung Suh, C.-H. Hong, H. S. Yoon, H. J. Lee, C. S. Kim
Publikováno v:
Journal of Applied Physics. 90:5642-5646
Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells were investigated by using photoluminescence, transmission electron microscopy, optical microscopy, and high resolution x-ray diffraction. The InxG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d18758a8f2a96a0c4123c535dc538da
https://doi.org/10.1063/1.1410320
https://doi.org/10.1063/1.1410320
Autor:
A. Yoshikawa, M. G. Cheong, Chang-Hee Hong, H. J. Lee, Eun-Kyung Suh, K. S. Kim, Gye Mo Yang, K.Y. Lim, Min Han, N. W. Namgung
Publikováno v:
Journal of Crystal Growth. 221:734-738
In a temperature range of 750–1050°C rapid thermal annealing was carried out to activate Mg impurities in GaN epilayers grown on sapphire by metalorganic chemical vapor deposition. Activation increased with temperature until near 950°C, and then
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfaec6e61811d64c615df9d09da6921e
https://doi.org/10.1016/s0022-0248(00)00809-5
https://doi.org/10.1016/s0022-0248(00)00809-5
Autor:
M. G. Cheong, K. S. Kim, H. S. Yoon, R. J. Choi, N. W. Namgung, Eun-Kyung Suh, C. S. Kim, H. J. Lee
Publikováno v:
Applied Physics Letters. 80:1001-1003
P-type GaN layers were grown on sapphire by metalorganic chemical-vapor deposition and then rapid thermal annealing (RTA) was performed to electrically activate Mg impurities. Varied acceptor densities were obtained by RTA temperature and Mg concentr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1249c7f7f7c364ff9098d0a1c3a92038
https://doi.org/10.1063/1.1448666
https://doi.org/10.1063/1.1448666
Publikováno v:
Applied Physics Letters. 80:799-801
Hall effect and capacitance–voltage measurements confirm a conductive thin layer near the GaN/sapphire interface. The temperature-dependent Hall effect of the interface layer was directly measured at temperatures above 100 K, and the results were s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16d2bb9e6ccb12644d54fdc1fa80f373
https://doi.org/10.1063/1.1446991
https://doi.org/10.1063/1.1446991
Autor:
Hyo-Jong Lee, E.-K. Suh, M. G. Cheong, Mun Seok Jeong, Jeffrey O. White, C. S. Kim, Yongkwan Kim, Chang-Hee Hong
Publikováno v:
Applied Physics Letters. 79:3440-3442
Spatially and spectrally resolved photoluminescence of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition is studied with near-field scanning optical microscopy (NSOM) and transmission electron microscopy (TEM). High-spatial-reso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69abc65a28c435ce0b2a7151bf16b985
https://doi.org/10.1063/1.1420489
https://doi.org/10.1063/1.1420489
Autor:
N. W. Namgung, D. H. Lim, Hyung Jae Lee, Gye Mo Yang, K. S. Nahm, M. G. Cheong, K. S. Kim, Chang-Hee Hong, Eun-Kyung Suh, C. S. Oh, A. Yoshikawa, Kee Young Lim
Publikováno v:
Applied Physics Letters. 77:2557-2559
Temperature-dependent Hall effect measurements on unintentionally doped n-type GaN epilayers show that, above room temperature, the Hall-mobility values of different samples vary parallel with each other with temperature. We demonstrate that this ano
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::390d55f719425fea054d9f81910298e2
https://doi.org/10.1063/1.1318728
https://doi.org/10.1063/1.1318728
Publikováno v:
Applied Physics Letters. 76:1149-1151
A two-band model involving the heavy- and light-hole bands was adopted to analyze the temperature-dependent Hall effect measured on Mg-doped p-type GaN epilayers. At 300 K, the hole concentration was determined to be nearly twice the Hall concentrati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1abe254f3f641e9f853aadf534e4742a
https://doi.org/10.1063/1.125966
https://doi.org/10.1063/1.125966