Zobrazeno 1 - 10
of 62
pro vyhledávání: '"M G, Lagally"'
Autor:
Thomas McJunkin, Benjamin Harpt, Yi Feng, Merritt P. Losert, Rajib Rahman, J. P. Dodson, M. A. Wolfe, D. E. Savage, M. G. Lagally, S. N. Coppersmith, Mark Friesen, Robert Joynt, M. A. Eriksson
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-7 (2022)
Quantum-dot spin qubits in Si/SiGe quantum wells require a large and uniform valley splitting for robust operation and scalability. Here the authors introduce and characterize a new heterostructure with periodic oscillations of Ge atoms in the quantu
Externí odkaz:
https://doaj.org/article/53757d2125b740fe942bcf04e71a3b95
Autor:
Brandur Thorgrimsson, Dohun Kim, Yuan-Chi Yang, L. W. Smith, C. B. Simmons, Daniel R. Ward, Ryan H. Foote, J. Corrigan, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson
Publikováno v:
npj Quantum Information, Vol 3, Iss 1, Pp 1-4 (2017)
Quantum information: improving semiconducting qubit performance Researchers in the United States demonstrate high tunability of spin qubits in silicon-based quantum dots. Mark Eriksson at the University of Wisconsin-Madison and colleagues have achiev
Externí odkaz:
https://doaj.org/article/284840a83ca14817b7e3faf2377e1e7c
Autor:
J. Park, Y. Ahn, J. A. Tilka, K. C. Sampson, D. E. Savage, J. R. Prance, C. B. Simmons, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson, M. V. Holt, P. G. Evans
Publikováno v:
APL Materials, Vol 4, Iss 6, Pp 066102-066102-9 (2016)
Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background dopin
Externí odkaz:
https://doaj.org/article/3791eeeab5b64a6ea66cbdd6665a1d4a
Autor:
Thomas McJunkin, Benjamin Harpt, Yi Feng, Merritt P. Losert, Rajib Rahman, J. P. Dodson, M. A. Wolfe, D. E. Savage, M. G. Lagally, S. N. Coppersmith, Mark Friesen, Robert Joynt, M. A. Eriksson
Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the valley split
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f2841c427900ef13f238b2778e7fa81
http://arxiv.org/abs/2112.09765
http://arxiv.org/abs/2112.09765
Autor:
Justyna P, Zwolak, Thomas, McJunkin, Sandesh S, Kalantre, J P, Dodson, E R, MacQuarrie, D E, Savage, M G, Lagally, S N, Coppersmith, Mark A, Eriksson, Jacob M, Taylor
Publikováno v:
Phys Rev Appl
The current practice of manually tuning quantum dots (QDs) for qubit operation is a relatively time-consuming procedure that is inherently impractical for scaling up and applications. In this work, we report on the in situ implementation of a recentl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::84e65708a33800f7436d046d1e24581a
https://pubmed.ncbi.nlm.nih.gov/33304939
https://pubmed.ncbi.nlm.nih.gov/33304939
Autor:
J R Prance, B J Van Bael, C B Simmons, D E Savage, M G Lagally, Mark Friesen, S N Coppersmith, M A Eriksson
Publikováno v:
Nanotechnology. 33:129501
The simulated noise used to benchmark wavelet edge detection in this work was described incorrectly. The correct description is given here, and new results based on noise that matches the original description are provided. The results support our ori
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c778b4ae4062f81f2eeb3eca79d1f365
https://doi.org/10.1088/1361-6528/ac4284
https://doi.org/10.1088/1361-6528/ac4284
Autor:
Xiao Xue, Mark A. Eriksson, Stephanie Wehner, Lieven M. K. Vandersypen, Daniel R. Ward, Susan Coppersmith, Thomas F. Watson, M. G. Lagally, Jonas Helsen, Donald E. Savage
Publikováno v:
Physical Review B, 9(2)
Physical Review X
Physical Review X
We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross-talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c70d0140b45859de7f361a46be6fb77b
http://resolver.tudelft.nl/uuid:63796009-c752-46b6-b4ae-31e0d37f3866
http://resolver.tudelft.nl/uuid:63796009-c752-46b6-b4ae-31e0d37f3866
Autor:
Mark Friesen, Payam Amin, T. J. Knapp, Samuel F. Neyens, Lieven M. K. Vandersypen, James S. Clarke, Mark A. Eriksson, Ryan H. Foote, Susan Coppersmith, Brandur Thorgrimsson, Donald E. Savage, Thomas McJunkin, M. G. Lagally, Nicole K. Thomas
Publikováno v:
Applied Physics Letters, 112(24)
Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top of the quan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90c77f04b982cb1e8f99a1e8fb1b7bb8
Publikováno v:
ECS Transactions. 33:813-821
Defect-free, smooth, tensilely strained Si(110) has been fabricated via elastic strain relaxation of trilayer Si/SiGe/Si(110) nanomembrane heterostructures grown on silicon-on-insulator (SOI), in which the middle layer is compressively strained. We r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62f2aef877d9fb13ef4fed85af855837
https://doi.org/10.1149/1.3487611
https://doi.org/10.1149/1.3487611
Autor:
D. E. Savage, Madhu Thalakulam, B. M. Rosemeyer, J.R. Prance, Mark Friesen, Robert Joynt, S. N. Coppersmith, Mark A. Eriksson, Christie Simmons, B. J. Van Bael, M. G. Lagally
Publikováno v:
ECS Transactions. 33:639-647
Quantum dots in Si have attracted recent interest due to the possibility of long spin relaxation and spin dephasing times in this material. Si/SiGe heterostructures are a particularly promising host for Si quantum dots, because the epitaxial interfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::309510f5db1643b1dc9d3526ae0f5e12
https://doi.org/10.1149/1.3487594
https://doi.org/10.1149/1.3487594