Zobrazeno 1 - 9
of 9
pro vyhledávání: '"M G, Krebs"'
Autor:
C. B. Westphalen, M. G. Krebs, C. Le Tourneau, E. S. Sokol, S. L. Maund, T. R. Wilson, D. X. Jin, J. Y. Newberg, D. Fabrizio, L. Veronese, M. Thomas, F. de Braud
Publikováno v:
npj Precision Oncology, Vol 5, Iss 1, Pp 1-9 (2021)
Abstract Neurotrophic tropomyosin receptor kinase (NTRK) gene fusions are rare oncogenic drivers in solid tumours. This study aimed to interrogate a large real-world database of comprehensive genomic profiling data to describe the genomic landscape a
Externí odkaz:
https://doaj.org/article/9792f8a7737545ee8ef0a9dae8755606
Autor:
A. Sharp, A. Williams, S. Blagden, R. Plummer, D. Hochhauser, M. G. Krebs, S. Pacey, J. Evans, S. Whelan, S. Nandakumar, S. Rogers, K. L. Jameson, F. G. Basile, J. de Bono, H.-T. Arkenau
Publikováno v:
HemaSphere, Vol 6, Pp 1970-1971 (2022)
Externí odkaz:
https://doaj.org/article/022c08bb169e4ba6be03fbe1196aac39
Autor:
C. B. Westphalen, M. G. Krebs, C. Le Tourneau, E. S. Sokol, S. L. Maund, T. R. Wilson, D. X. Jin, J. Y. Newberg, D. Fabrizio, L. Veronese, M. Thomas, F. de Braud
Publikováno v:
npj Precision Oncology, Vol 5, Iss 1, Pp 1-2 (2021)
Externí odkaz:
https://doaj.org/article/02e9bdfe3eb74d70934e906b5ee16725
Publikováno v:
Clinical oncology (Royal College of Radiologists (Great Britain)). 35(1)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::ca0368d21d7b32563cf0db69b1d4e7a4
https://pubmed.ncbi.nlm.nih.gov/36335040
https://pubmed.ncbi.nlm.nih.gov/36335040
Autor:
P, Jittla, D M, Graham, C, Zhou, J, Halliwell, S, O'Reilly, S, Aruketty, A, Azizi, T, Germetaki, J, Lowe, M, Little, G, Punnett, P, McMahon, L, Benson, L, Carter, M G, Krebs, F C, Thistlethwaite, E, Darlington, J, Yorke, N, Cook
Publikováno v:
ESMO Open. 7:100550
Anxiety and depression in patients with cancer is associated with decreased quality of life and increased morbidity and mortality. However, these are often overlooked and untreated. Early-phase clinical trials (EPCTs) recruit patients with advanced c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f5bd7b9eb4c6105519a7147bcdd6c3e
https://doi.org/10.1016/j.esmoop.2022.100550
https://doi.org/10.1016/j.esmoop.2022.100550
Autor:
M. G. Krebs
Publikováno v:
IEEE Transactions on Nuclear Science. 24:2347-2351
The LSI digital microcircuit transient radiation testing problem is principally one of defining an adequate set of tests to determine worst-case radiation response. This paper presents a logic-cell coverage (LCC) technique for evaluating microcircuit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c467c57ba016aedd16db1dddb88acbb0
https://doi.org/10.1109/tns.1977.4329219
https://doi.org/10.1109/tns.1977.4329219
Autor:
D. N. Pocock, M. G. Krebs
Publikováno v:
IEEE Transactions on Nuclear Science. 19:86-93
Results are presented on generalized approaches to derive radiation-inclusive simplified models of linear and digital microcircuits. Application of the principle of superposition allows generation of a compact small-signal model of the linear microci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c6cf881190480d17231908f4c405ad7
https://doi.org/10.1109/tns.1972.4326813
https://doi.org/10.1109/tns.1972.4326813
Autor:
J. P. Raymond, M. G. Krebs
Publikováno v:
IEEE Transactions on Nuclear Science. 19:103-107
Capability of the NET-2 circuit/system computer program in semiconductor device analysis is presented. Semiconductor devices are described in terms of lumped model networks of user-selected complexity. The basic capability is illustrated through the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7372389f94f66f38b7d273ca42668bbd
https://doi.org/10.1109/tns.1972.4326816
https://doi.org/10.1109/tns.1972.4326816
Autor:
M. G. Krebs, J. P. Raymond
SMETAL OXIDE SEMICONDUCTORS, CDC 6600 COMPUTERS, TRANSIENT RADIATION EFFECTS(ELECTRONICS)An evaluation of the capability of the NET-2 Circuit/System Analysis Computer Program to perform analysis of radiation effects on complex semiconductor devices a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c991be0dfa3d90b5b74a38782bbc7e5c
https://doi.org/10.21236/ad0758883
https://doi.org/10.21236/ad0758883
