Zobrazeno 1 - 10
of 21
pro vyhledávání: '"M F Panov"'
Publikováno v:
Semiconductors. 56:455-461
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9028b2724fc31f5df13237dbc0ce1585
https://doi.org/10.1134/s1063782622130073
https://doi.org/10.1134/s1063782622130073
Autor:
M. F. Panov, M. V. Pavlova
Publikováno v:
Technical Physics. 66:779-783
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1b3e1ca6814078da5ae0670b16b6c67
https://doi.org/10.1134/s1063784221050182
https://doi.org/10.1134/s1063784221050182
Autor:
D. D. Avrov, S. A. Kukushkin, A. O. Lebedev, M. F. Panov, V. V. Luchinin, A. V. Osipov, A. N. Gorlyak, A. V. Markov
Publikováno v:
Technical Physics Letters. 46:968-971
A model is suggested for a quantitative analysis of the dependence of the dielectric function of hexagonal silicon carbide polytypes on photon energy in the range of 0.7–6.5 eV. The model, which is the sum of two Tauc–Lorentz oscillators (main an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be9f034a8fa00e84ec4b602a389e779e
https://doi.org/10.1134/s1063785020100028
https://doi.org/10.1134/s1063785020100028
Autor:
A. O. Lebedev, V. V. Luchinin, A. N. Gorlyak, A. S. Grashchenko, M. F. Panov, S. A. Kukushkin, A. V. Osipov, A. V. Markov
Publikováno v:
Technical Physics Letters. 46:763-766
The results of hardness and Young’s modulus study of near-surface layers of 4H-SiC hexagonal silicon carbide obtained by the modified Lely method from the C-face (000 $$\bar {1}$$ ) and Si-face (0001) at shallow depths of the indenter are presented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c79f605162c4f0497341f1986474cf0c
https://doi.org/10.1134/s106378502008012x
https://doi.org/10.1134/s106378502008012x
Publikováno v:
Technical Physics. 62:755-759
The processes involved in the planarization of the surface of nanoporous SiO2 by the atomicmolecular deposition of nanoscale TiO2 films were studied in regimes with different degrees of penetration of TiO2 into SiO2 nanopores. The technological proce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c174d6e900ea50e5dbf9f0d97e8655c
https://doi.org/10.1134/s1063784217050164
https://doi.org/10.1134/s1063784217050164
Autor:
V. V. Luchinin, E. N. Muratova, S. A. Galunin, M. F. Panov, N. N. Potrakhov, L. B. Matyushkin, Andrey A. Shemukhin, V. A. Lifshits, V. V. Ishin, Vyacheslav A. Moshnikov
Publikováno v:
Glass Physics and Chemistry. 43:163-169
The peculiarities of the formation of porous membranes based on aluminum oxide obtained by the electrochemical anodization of aluminum foil with the preset topological parameters of pores-capillares (20–220 nm) have been studied. The methods to stu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1958bdb8d8e2d0e9e031f0c8127aac01
https://doi.org/10.1134/s1087659617020122
https://doi.org/10.1134/s1087659617020122
Publikováno v:
Journal of Physics: Conference Series. 1697:012122
The influence of the anodization current density to the morphology and composition of the surface of porous silicon before and after its impregnation with an antibiotic was investigated using atomic force microscopy and IR spectroscopy. Layers of por
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4a2cd7fac2d13b55400edf104d09171
https://doi.org/10.1088/1742-6596/1697/1/012122
https://doi.org/10.1088/1742-6596/1697/1/012122
Autor:
Alexander N. Smirnov, V. V. Kudryavtsev, V.M. Svetlychnyi, S. I. Goloudina, Iosif V. Gofman, V. M. Pasyuta, Victor V. Luchinin, Demid A. Kirilenko, V. P. Sklizkova, M. F. Panov, T. F. Semenova
Publikováno v:
MATEC Web of Conferences, Vol 98, p 04002 (2017)
High quality single crystal SiC films were prepared by carbonization of polyimide Langmuir-Blodgett films on Si substrate. The films formed after annealing of the polyimide films at 1000°C, 1100°C, 1200°C were studied by Fourier transform-infrared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::288c0b9236d27256b2d87b7db4ae9a55
https://doaj.org/article/71b3f3439c5b40228e0c8e3f6c121d80
https://doaj.org/article/71b3f3439c5b40228e0c8e3f6c121d80
Autor:
Vyacheslav A. Moshnikov, M. F. Panov, A. O. Belorus, S. V. Mjakin, A. A. Bobkov, Yu. M. Spivak
Publikováno v:
Journal of Nanomaterials, Vol 2016 (2016)
Hydrophilic layers of porous silicon are prepared by single- or two-step anodization and characterized by evaluating their surface hydrophilicity and contents of functional groups using IR spectroscopy and adsorption of acid-base indicators with diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3af927dd7f5a164248352861697512f
https://doaj.org/article/95368c73956545aeaf7233108062fdd8
https://doaj.org/article/95368c73956545aeaf7233108062fdd8
Autor:
M. F. Panov, V. V. Tomaev
Publikováno v:
Glass Physics and Chemistry. 38:419-426
Nanocrystalline lead selenide films of controlled thickness have been prepared by vacuum deposition on glass substrates of the C-29 brand. Some of the films are oxidized to various degrees in dry oxygen atmosphere. Film surfaces and cleavages have be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4125d09eccb003022daaae545b6a74e4
https://doi.org/10.1134/s1087659612040104
https://doi.org/10.1134/s1087659612040104